公开(公告)号：US09222994B2

公开(公告)日：2015-12-29

申请号：US13200148

申请日：2011-09-19

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

IPC分类号： G01R23/02 ,  G01R33/12 ,  G11B5/39 ,  H01L43/08 ,  G11C11/16

CPC分类号： G01R33/1284 ,  G11B5/3903 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

摘要翻译： 公开了一种用于测量至少具有磁振荡层（MOL），结层和磁参考层（MRL）的自旋转矩振荡器中的频率的方法。 在第一实施例中，在施加DC电流以将MOL激发到振荡状态之后，将小的面内磁场施加到STO。 MRL具有稍微倾斜的垂直磁化，以产生面内磁化分量，用作用于测量MOL面内磁化分量的振荡频率的参考层。 作为可变STO电阻的结果，在DC电流中产生AC电压变化，并直接与MOL振荡频率相关。 或者，具有垂直和平面内部分量的场可以在外部施加，或者通过在两个磁极之间形成STO，从而在MRL中产生面内磁化参考分量。

公开(公告)号：US20130069626A1

公开(公告)日：2013-03-21

申请号：US13200148

申请日：2011-09-19

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Min Li ,  Kenichi Takano ,  Joe Smyth ,  Moris Dovek ,  Akihiko Takeo ,  Tomomi Funayama ,  Masahiro Takashita ,  Masayuki Takagishi

IPC分类号： G01R23/02

CPC分类号： G01R33/1284 ,  G11B5/3903 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

摘要： A method for measuring the frequency in a spin torque oscillator having at least a magnetic oscillation layer (MOL), junction layer, and magnetic reference layer (MRL) is disclosed. In a first embodiment, a small in-plane magnetic field is applied to the STO after a DC current is applied to excite the MOL into an oscillation state. The MRL has a perpendicular magnetization that is tilted slightly to give an in-plane magnetization component to serve as a reference layer for measuring the oscillation frequency of the MOL in-plane magnetization component. An AC voltage change is produced in the DC current as a result of variable STO resistance and directly correlates to MOL oscillation frequency. Alternatively, a field having both perpendicular and in-plane components may be applied externally or by forming the STO between two magnetic poles thereby producing an in-plane magnetization reference component in the MRL.

公开(公告)号：US08881376B2

公开(公告)日：2014-11-11

申请号：US13199179

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127 ,  G11B5/21 ,  G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A method of manufacturing a PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing by including an AFM-FM phase change material spacer that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be formed as a laminated structure by a sputter deposition process wherein a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers are laid down in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %, and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip.

摘要翻译： 公开了一种制造PMR写入器的方法，其在非写入期间使磁极擦除最小化，并且在写入期间使写入场最大化，包括在非写入期间处于AFM状态的AFM-FM相变材料间隔物，并且通过 书写过程中加热。 包括写极的主极层可以通过溅射沉积工艺形成为层叠结构，其中以交替的方式放置多个“n”个铁磁层和“n-1”个AFM-FM相变材料层。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir），并且还可以用作磁通门以防止磁轭焊剂泄漏到 写极点。

公开(公告)号：US08446692B2

公开(公告)日：2013-05-21

申请号：US13199188

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an anti-ferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中的写入磁场最大化并切换到铁磁（FM） 在写作期间加热状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US20110308074A1

公开(公告)日：2011-12-22

申请号：US13199179

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content>35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US08004794B2

公开(公告)日：2011-08-23

申请号：US11894494

申请日：2007-08-21

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US20090052092A1

公开(公告)日：2009-02-26

申请号：US11894494

申请日：2007-08-21

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/33

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an AFM state during non-writing and switches to a FM state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n-1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh or FeRhX alloy (X=Pt, Pd, or Ir) having a Rh content >35 atomic %. AFM-FM phase change material may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且通过在非写入期间处于AFM状态的AFM-FM相变材料的写入期间写入字段最大化并且在写入期间通过加热切换到FM状态。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为Rh含量> 35原子％的FeRh或FeRhX合金（X = Pt，Pd或Ir）。 AFM-FM相变材料也可以用作磁通门，以防止磁轭磁通泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US20120087042A1

公开(公告)日：2012-04-12

申请号：US13199188

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/147 ,  G11B5/60

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an antiferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中写入期间最大化写入场并且通过以下方式切换到铁磁（FM）状态： 书写过程中加热。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US08503271B2

公开(公告)日：2013-08-06

申请号：US13551670

申请日：2012-07-18

申请人： Yuchen Zhou ,  Kenichi Takano ,  Xuhui Jin ,  Erhard Schreck ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Xuhui Jin ,  Erhard Schreck ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/02 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/6088 ,  G11B2005/0005 ,  G11B2005/0021 ,  Y10T29/49032

摘要： A method of forming a TAMR (Thermal Assisted Magnetic Recording) write head that uses the energy of optical-laser generated edge plasmons in a plasmon antenna to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The method incorporates forming a magnetic core within the plasmon antenna, so the antenna effectively becomes an extension of the magnetic pole and produces a magnetic field whose maximum gradient overlaps the region being heated by the edge plasmons generated in the conducting layer of the antenna surrounding the antenna's magnetic core.

摘要翻译： 一种形成TAMR（热辅助磁记录）写头的方法，其使用等离子体激元中的激光产生的边缘等离子体激元的能量来局部加热磁记录介质并降低其矫顽力和磁各向异性。 该方法包括在等离子体激元天线内形成磁芯，因此天线有效地成为磁极的延伸，并产生磁场，其最大梯度与被天线周围的天线导电层中产生的边缘等离子体激发加热的区域重叠 天线的磁芯。

公开(公告)号：US08059496B1

公开(公告)日：2011-11-15

申请号：US12804232

申请日：2010-07-16

申请人： Yuchen Zhou ,  Xuhui Jin ,  Kenichi Takano ,  Moris Dovek ,  Tobias Maletzky ,  Erhard Schreck ,  Joe Smyth

发明人： Yuchen Zhou ,  Xuhui Jin ,  Kenichi Takano ,  Moris Dovek ,  Tobias Maletzky ,  Erhard Schreck ,  Joe Smyth

IPC分类号： G11B11/00

CPC分类号： G11B5/314 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/6088 ,  G11B2005/0021

摘要： Various embodiments of a TAMR head having a magnetic core antenna (MCA) with a recessed plasmon layer are disclosed. An end of the plasmon layer is separated from the ABS by a magnetic layer that transmits the plasmon mode from the plasmon layer and transmits magnetic flux from an adjacent main pole layer. Both of the MCA and magnetic layer may have a triangular shape from an ABS view. There may be a non-magnetic separation layer between the MCA magnetic core and the main pole. Furthermore, a magnetic shield may be included with a side at the ABS, a side facing an end of a waveguide that transmits electromagnetic radiation to the MCA, and a side facing an edge of the plasmon layer. The recessed plasmon layer allows an improved overlay of the thermal heating spot on the magnetic field gradient at the magnetic medium that provides better TAMR performance.

摘要翻译： 公开了具有带凹陷等离子体层的磁芯天线（MCA）的TAMR磁头的各种实施例。 等离子体激元层的一端通过从等离子体激元层传输等离子体模式的磁层与ABS分离，并从相邻的主极层传输磁通量。 从ABS观点来看，MCA和磁性层都可以具有三角形形状。 在MCA磁芯和主极之间可能存在非磁性分离层。 此外，在ABS的一侧可以包括磁屏蔽，面向朝向MCA的电磁辐射的波导的端部的一侧以及面向等离子体层的边缘的一侧。 凹入的等离子体膜层允许在磁介质上的磁场梯度上的热加热点的改进的叠加，从而提供更好的TAMR性能。