公开(公告)号：US5304357A

公开(公告)日：1994-04-19

申请号：US880755

申请日：1992-05-08

申请人： Yukito Sato ,  Mitsugu Irinoda ,  Kouichi Ohtaka ,  Takeshi Hino ,  Masafumi Kumano

发明人： Yukito Sato ,  Mitsugu Irinoda ,  Kouichi Ohtaka ,  Takeshi Hino ,  Masafumi Kumano

IPC分类号： H01L21/20 ,  H01L21/00 ,  H01L21/208 ,  H01L21/268 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L21/67121 ,  Y10S117/904 ,  Y10S148/09

摘要： An apparatus for zone melting a thin semiconductor film comprises an first laser for heating the thin semiconductor film, at least one additional laser for heating an insulating substrate, a first temperature detecting device for detecting the temperature of a melted portion of the thin semiconductor film, and a second temperature detecting device for detecting the temperature of a solidified portion of the thin semiconductor film. The apparatus further comprises a first controller for controlling an output of the first laser so as to maintain the temperature of the melted portion in a first predetermined temperature range, and a second controller for controlling an output of the additional laser so as to maintain the temperature of the solidified portion in a second predetermined temperature range.

摘要翻译： 用于对薄半导体膜进行区域熔融的装置包括用于加热薄半导体膜的第一激光器，用于加热绝缘基板的至少一个附加激光器，用于检测薄半导体膜的熔化部分的温度的第一温度检测装置， 以及第二温度检测装置，用于检测薄半导体膜的凝固部分的温度。 该装置还包括第一控制器，用于控制第一激光器的输出，以将熔融部分的温度保持在第一预定温度范围;以及第二控制器，用于控制附加激光器的输出，以便保持温度 在第二预定温度范围内的凝固部分。

公开(公告)号：US20050111807A1

公开(公告)日：2005-05-26

申请号：US10951672

申请日：2004-09-29

申请人： Takeshi Hino

发明人： Takeshi Hino

IPC分类号： G02B1/02 ,  G02B6/122 ,  G02B6/10

CPC分类号： B82Y20/00 ,  G02B6/1225

摘要： A photonic crystal comprises a matrix constituting said three-dimensional periodic structure, a first lattice formed in said matrix by first spherical voids having a uniform first diameter, said first spherical voids forming a face-centered cubic lattice, and a second lattice formed in said matrix by second spherical voids having a uniform second diameter smaller than said first diameter, said second spherical voids occupying interstitial sites of said first spherical voids.

摘要翻译： 光子晶体包括构成所述三维周期结构的矩阵，通过具有均匀第一直径的第一球形空隙在所述基体中形成的第一格子，所述第一球形空隙形成面心立方晶格，所述第二晶格形成在所述 基体具有比所述第一直径小的均匀的第二直径的第二球形空隙，所述第二球形空隙占据所述第一球形空隙的间隙位置。

公开(公告)号：US08208511B2

公开(公告)日：2012-06-26

申请号：US12669090

申请日：2008-11-13

申请人： Shunichi Sato ,  Akihiro Itoh ,  Takeshi Hino ,  Naoto Jikutani

发明人： Shunichi Sato ,  Akihiro Itoh ,  Takeshi Hino ,  Naoto Jikutani

IPC分类号： H01S5/00 ,  H01S3/22 ,  H01S3/223

CPC分类号： H01S5/18358 ,  B41J2/45 ,  H01S5/0021 ,  H01S5/18313 ,  H01S5/423

摘要： A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

摘要翻译： 公开的表面发射激光器能够容易地制造，具有更高的产量和更长的使用寿命。 在表面发射激光器中，包括选择性氧化层作为上半导体布拉格反射器的低折射率层的一部分; 包括选择性氧化层的低折射率层包括邻接选择氧化层的两个中间层和与中间层相邻的两个低折射率层。 中间层的Al含量比低于选择氧化层的Al含量率低，低折射率层中的Al含量比低于选择氧化层的Al含量率低。 该结构能够提供对氧化层的厚度和氧化速率的更多控制，从而能够减少氧化层的厚度的变化。

公开(公告)号：US20100189467A1

公开(公告)日：2010-07-29

申请号：US12669090

申请日：2008-11-13

申请人： Shunichi Sato ,  Akihiro Itoh ,  Takeshi Hino ,  Naoto Jikutani

发明人： Shunichi Sato ,  Akihiro Itoh ,  Takeshi Hino ,  Naoto Jikutani

IPC分类号： G03G15/04 ,  H01S5/183 ,  H01S5/187 ,  H01S5/42

CPC分类号： H01S5/18358 ,  B41J2/45 ,  H01S5/0021 ,  H01S5/18313 ,  H01S5/423

摘要： A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

摘要翻译： 公开的表面发射激光器能够容易地制造，具有更高的产量和更长的使用寿命。 在表面发射激光器中，包括选择性氧化层作为上半导体布拉格反射器的低折射率层的一部分; 包括选择性氧化层的低折射率层包括邻接选择氧化层的两个中间层和与中间层相邻的两个低折射率层。 中间层的Al含量比低于选择氧化层的Al含量率低，低折射率层中的Al含量比低于选择氧化层的Al含量率低。 该结构能够提供对氧化层的厚度和氧化速率的更多控制，从而能够减少氧化层的厚度的变化。

公开(公告)号：US07158709B2

公开(公告)日：2007-01-02

申请号：US10951672

申请日：2004-09-29

申请人： Takeshi Hino

发明人： Takeshi Hino

IPC分类号： G02B6/122

CPC分类号： B82Y20/00 ,  G02B6/1225

摘要： A photonic crystal comprises a matrix constituting said three-dimensional periodic structure, a first lattice formed in said matrix by first spherical voids having a uniform first diameter, said first spherical voids forming a face-centered cubic lattice, and a second lattice formed in said matrix by second spherical voids having a uniform second diameter smaller than said first diameter, said second spherical voids occupying interstitial sites of said first spherical voids.

摘要翻译： 光子晶体包括构成所述三维周期结构的矩阵，通过具有均匀第一直径的第一球形空隙在所述基体中形成的第一格子，所述第一球形空隙形成面心立方晶格，所述第二晶格形成在所述 基体具有比所述第一直径小的均匀的第二直径的第二球形空隙，所述第二球形空隙占据所述第一球形空隙的间隙位置。

公开(公告)号：US6036346A

公开(公告)日：2000-03-14

申请号：US859265

申请日：1997-05-20

申请人： Takeshi Hino ,  Toshihiro Hyodo

发明人： Takeshi Hino ,  Toshihiro Hyodo

IPC分类号： G06F17/50 ,  G06F19/00

CPC分类号： G06F17/5018

摘要： A semiconductor manufacturing process simulation apparatus using a diffusion model in which a dislocation loop generated in a crystalline substrate during an ion implantation process of a semiconductor manufacturing process is considered with respect to a diffusion in a heat treatment process subsequent to the ion implantation process. An ion implantation process simulating part simulates an ion implantation process. A model generating part generates a diffusion model in which contribution of dislocation loops is considered, the dislocation loops being formed in the substrate during the ion implantation process. A heat treatment process simulating part simulates a heat treatment process subsequent to the ion implantation process, the diffusion model generated by the model generating part being used for simulating diffusion of impurities in the substrate during the heat treatment process. A pressure field generated by the dislocation loops in the substrate is defined in the diffusion model by a function of a distance from a layer in which the dislocation loops are formed.

摘要翻译： 考虑到在离子注入工艺之后的热处理工艺中的扩散，考虑了在半导体制造工艺的离子注入工艺期间在晶体衬底中产生的位错环的扩散模型的半导体制造工艺模拟装置。 离子注入工艺模拟部分模拟离子注入工艺。 模型生成部分产生扩散模型，其中考虑位错环的贡献，在离子注入过程期间在衬底中形成位错环。 模拟部件的热处理工艺模拟离子注入工艺之后的热处理工艺，由模型产生部分生成的扩散模型用于在热处理过程中模拟衬底中杂质的扩散。 在扩散模型中通过与形成位错环的层的距离的函数来限定由基板中的位错环产生的压力场。