公开(公告)号：US20140021426A1

公开(公告)日：2014-01-23

申请号：US13927090

申请日：2013-06-25

Applicant: Yun-jae LEE ,  Woo-jin KIM ,  Joon-myoung LEE

Inventor： Yun-jae LEE ,  Woo-jin KIM ,  Joon-myoung LEE

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device comprises a memory cell comprising a magnetic resistance device and lower and upper electrodes with the magnetic resistance device interposed therebetween to apply current to the magnetic resistance device. The magnetic resistance device includes: a buffer layer for controlling a crystalline axis for inducing perpendicular magnetic anisotropy (PMA) in the magnetic resistance device, the buffer layer being in contact with the lower electrode; a seed layer being in contact with the buffer layer and being oriented to a hexagonal close-packed lattice (HCP) (0001) crystal plane; and a perpendicularly magnetized pinned layer being in contact with the seed layer and having an L11 type ordered structure.

Abstract translation: 一种磁性装置包括一个包含一个磁阻装置的存储单元和一个介于它们之间的磁阻装置的下电极和上电极，以向磁阻装置施加电流。 磁阻元件包括：缓冲层，用于控制在磁阻器件中引起垂直磁各向异性（PMA）的晶轴，缓冲层与下电极接触; 种子层与缓冲层接触并取向为六方密堆积晶格（HCP）（0001）晶面; 并且垂直磁化的钉扎层与种子层接触并且具有L11型有序结构。