公开(公告)号：US20140021426A1

公开(公告)日：2014-01-23

申请号：US13927090

申请日：2013-06-25

Applicant: Yun-jae LEE ,  Woo-jin KIM ,  Joon-myoung LEE

Inventor： Yun-jae LEE ,  Woo-jin KIM ,  Joon-myoung LEE

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device comprises a memory cell comprising a magnetic resistance device and lower and upper electrodes with the magnetic resistance device interposed therebetween to apply current to the magnetic resistance device. The magnetic resistance device includes: a buffer layer for controlling a crystalline axis for inducing perpendicular magnetic anisotropy (PMA) in the magnetic resistance device, the buffer layer being in contact with the lower electrode; a seed layer being in contact with the buffer layer and being oriented to a hexagonal close-packed lattice (HCP) (0001) crystal plane; and a perpendicularly magnetized pinned layer being in contact with the seed layer and having an L11 type ordered structure.

Abstract translation: 一种磁性装置包括一个包含一个磁阻装置的存储单元和一个介于它们之间的磁阻装置的下电极和上电极，以向磁阻装置施加电流。 磁阻元件包括：缓冲层，用于控制在磁阻器件中引起垂直磁各向异性（PMA）的晶轴，缓冲层与下电极接触; 种子层与缓冲层接触并取向为六方密堆积晶格（HCP）（0001）晶面; 并且垂直磁化的钉扎层与种子层接触并且具有L11型有序结构。

公开(公告)号：US20140327095A1

公开(公告)日：2014-11-06

申请号：US14254858

申请日：2014-04-16

Applicant: Young-hyun KIM ,  Hee-ju SHIN ,  Woo-jin KIM ,  Sang-hwan PARK

Inventor： Young-hyun KIM ,  Hee-ju SHIN ,  Woo-jin KIM ,  Sang-hwan PARK

IPC: H01L43/02

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic device can include a tunnel bather and a hybrid magnetization layer disposed adjacent the tunnel barrier. The hybrid magnetization layer can include a first perpendicular magnetic anisotropy (PMA) layer, a second PMA layer, and an amorphous blocking layer disposed between the first and second PMA layers. The first PMA layer can include a multi-layer film in which a first layer formed of Co and a second layer formed of Pt or Pd are alternately stacked. A first dopant formed of an element different from those of the first and second layers can also be included in the first PMA layer. The second PMA layer can be disposed between the first PMA layer and the tunnel barrier, and can include at least one element selected from a group consisting of Co, Fe, and Ni.

Abstract translation: 磁性装置可以包括隧道沐浴器和邻近隧道屏障设置的混合磁化层。 混合磁化层可以包括第一垂直磁各向异性（PMA）层，第二PMA层和设置在第一和第二PMA层之间的非晶形阻挡层。 第一PMA层可以包括多层膜，其中由Co形成的第一层和由Pt或Pd形成的第二层交替堆叠。 由与第一层和第二层不同的元素形成的第一掺杂剂也可以包括在第一PMA层中。 第二PMA层可以设置在第一PMA层和隧道势垒之间，并且可以包括选自由Co，Fe和Ni组成的组中的至少一种元素。