Therapeutic agent for tumor
    1.
    发明授权
    Therapeutic agent for tumor 有权
    肿瘤治疗剂

    公开(公告)号:US08962650B2

    公开(公告)日:2015-02-24

    申请号:US14002018

    申请日:2012-04-16

    摘要: A therapeutic agent for tumor for combined use of a compound or pharmaceutically acceptable salt thereof represented by Formula (I) and a compound represented by Formula (II): wherein R1 is C1-6 alkyl or C3-8 cycloalkyl, R2 is a hydrogen atom or C1-6 alkoxy, and R3 is a hydrogen atom or a halogen atom, exhibits an excellent antitumor effect compared to cases where these are individually used.

    摘要翻译: 用于组合使用由式(I)表示的化合物或其药学上可接受的盐和由式(II)表示的化合物的肿瘤治疗剂:其中R 1是C 1-6烷基或C 3-8环烷基,R 2是氢原子 或C 1-6烷氧基,并且R 3为氢原子或卤素原子,与单独使用它们的情况相比表现出优异的抗肿瘤效果。

    THERAPEUTIC AGENT FOR TUMOR
    2.
    发明申请
    THERAPEUTIC AGENT FOR TUMOR 有权
    肿瘤治疗剂

    公开(公告)号:US20140031384A1

    公开(公告)日:2014-01-30

    申请号:US14002018

    申请日:2012-04-16

    IPC分类号: A61K31/47 A61K31/437

    摘要: A therapeutic agent for tumor for combined use of a compound or pharmaceutically acceptable salt thereof represented by Formula (I) and a compound represented by Formula (II): wherein R1 is C1-6 alkyl or C3-8 cycloalkyl, R2 is a hydrogen atom or C1-6 alkoxy, and R3 is a hydrogen atom or a halogen atom, exhibits an excellent antitumor effect compared to cases where these are individually used.

    摘要翻译: 用于组合使用由式(I)表示的化合物或其药学上可接受的盐和由式(II)表示的化合物的肿瘤治疗剂:其中R 1是C 1-6烷基或C 3-8环烷基,R 2是氢原子 或C 1-6烷氧基,并且R 3为氢原子或卤素原子,与单独使用它们的情况相比表现出优异的抗肿瘤效果。

    Apparatus and method of ion beam processing

    公开(公告)号:US06610987B2

    公开(公告)日:2003-08-26

    申请号:US10081179

    申请日:2002-02-25

    IPC分类号: H01J3708

    CPC分类号: H01J37/3053 H01J2237/0041

    摘要: In order to suppress quick potential change on the surface of a process target when the shutter plate is opened and closed, when an ion beam IB from the ion source 10 is irradiated on a substrate 38 and the ion beam IB is neutralized by using neutralizing electrons e− generated by a microwave neutralizer 14, the shutter plate 62 shields the substrate 38 before and after the milling processing of the substrate 38, and the voltage of a power supply 34 is lowered when the shutter plate 62 is opened and closed so as to limit the amount of ion beam IB irradiation, thereby suppressing charge-up on the surface of the substrate 38.