公开(公告)号：US20110102252A1

公开(公告)日：2011-05-05

申请号：US12913987

申请日：2010-10-28

申请人： Yuusuke WATANABE ,  Tatsuya IWASE ,  Noriyoshi SUZUKI

发明人： Yuusuke WATANABE ,  Tatsuya IWASE ,  Noriyoshi SUZUKI

IPC分类号： G01S19/41

CPC分类号： G01S19/40 ,  G01S19/52

摘要： A positioning apparatus includes: a first positioning device for calculating a reception position of a GPS receiver with respect to each combination of satellites based on a pseudo distance from each positioning satellite to the reception position; a component error calculator for calculating an error of at least one component in a calculation result of the first positioning device; a pseudo distance error calculator for obtaining a relation equation between the error of the at least one component and an error of the pseudo distance, and for solving simultaneous equations comprising the relation equation so that the error of the pseudo distance with respect to each positioning satellite is calculated; and a second positioning device for correcting the reception position based on the error of the pseudo distance.

摘要翻译： 一种定位装置，包括：第一定位装置，用于基于从每个定位卫星到接收位置的伪距离，计算GPS接收机相对于卫星组合的接收位置; 用于计算第一定位装置的计算结果中的至少一个分量的误差的分量误差计算器; 伪距离误差计算器，用于获得所述至少一个分量的误差与所述伪距离的误差之间的关系方程，并且用于求解包括关系式的联立方程，使得相对于每个定位卫星的伪距离的误差 计算; 以及第二定位装置，用于基于伪距离的误差校正接收位置​​。

公开(公告)号：US20110235686A1

公开(公告)日：2011-09-29

申请号：US13044030

申请日：2011-03-09

申请人： Yoshiko KOJIMA ,  Junichi MEGURO ,  Noriyoshi SUZUKI

发明人： Yoshiko KOJIMA ,  Junichi MEGURO ,  Noriyoshi SUZUKI

IPC分类号： H04B1/707

CPC分类号： G01S19/426

摘要： The present invention provides a position estimation apparatus, mounted at mobile object, including: an acquisition section that acquires transmission source information transmitted from each plural information transmission sources including, information relating to a position of information transmission source, information relating to a distance between information transmission source and mobile object, and information relating to a relative velocity of mobile object with respect to information transmission sources; a trajectory calculation section that calculates, over predetermined duration, a trajectory of mobile object by integrating velocity vectors of mobile object obtained based on transmission source information; and an estimation section that estimates, as a position of mobile object, a position for which trajectory is translated such that a difference between, distances between a plurality of points at different times on trajectory and respective information transmission sources, and acquired distances between respective information transmission sources and mobile object, is minimum.

摘要翻译： 本发明提供了一种安装在移动对象上的位置估计装置，包括：获取单元，用于获取从每个多个信息发送源发送的发送源信息，包括与信息发送源的位置相关的信息，与信息之间的距离相关的信息 传输源和移动对象，以及与移动对象相对于信息传输源的相对速度有关的信息; 轨迹计算部，其通过对基于发送源信息获得的移动体的速度矢量进行积分，在规定的持续时间内计算出移动体的轨迹; 以及估计部，其估计作为移动对象的位置的轨迹被翻译的位置，使得轨迹上的不同时刻的多个点之间的距离和各个信息传输源之间的差异以及各个信息之间的获取距离 传输源和移动对象，是最小的。

公开(公告)号：US20110175208A1

公开(公告)日：2011-07-21

申请号：US13078478

申请日：2011-04-01

申请人： Satoshi TORIUMI ,  Noriyoshi SUZUKI

发明人： Satoshi TORIUMI ,  Noriyoshi SUZUKI

IPC分类号： H01L29/06

CPC分类号： H01L21/3145 ,  C23C16/308 ,  C23C16/45523 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.

摘要翻译： 本发明的目的是提供一种包括具有高介电强度电压，低介电常数和低吸湿性的绝缘层的半导体器件。 本发明的另一个目的是提供一种使用该半导体器件的具有高性能和高可靠性的电子设备。 交替地沉积包含氮的绝缘体，例如氮氧化硅或氮氧化硅，以及添加有添加了氟的氟或氮氧化硅的氮氧化物等氮和氟的绝缘体，从而形成绝缘层。 通过在包含氮的绝缘体之间夹持含有氮和氟的绝缘体，可以防止含有氮和氟的绝缘体吸收水分，从而可以提高介电强度电压。 此外，绝缘体含有氟，使得可以降低介电常数。

公开(公告)号：US20090102027A1

公开(公告)日：2009-04-23

申请号：US12243164

申请日：2008-10-01

申请人： Satoshi TORIUMI ,  Noriyoshi SUZUKI

发明人： Satoshi TORIUMI ,  Noriyoshi SUZUKI

IPC分类号： H01L23/58 ,  H01L21/31

CPC分类号： H01L21/3145 ,  C23C16/308 ,  C23C16/45523 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： An object of the present invention is to provide a semiconductor device including an insulating layer with a high dielectric strength voltage, a low dielectric constant, and low hygroscopicity. Another object of the present invention is to provide an electronic appliance with high performance and high reliability, which uses the semiconductor device. An insulator containing nitrogen, such as silicon oxynitride or silicon nitride oxide, and an insulator containing nitrogen and fluorine, such as silicon oxynitride added with fluorine or silicon nitride oxide added with fluorine, are alternately deposited so that an insulating layer is formed. By sandwiching an insulator containing nitrogen and fluorine between insulators containing nitrogen, the insulator containing nitrogen and fluorine can be prevented from absorbing moisture and thus a dielectric strength voltage can be increased. Further, an insulator contains fluorine so that a dielectric constant can be reduced.

摘要翻译： 本发明的目的是提供一种包括具有高介电强度电压，低介电常数和低吸湿性的绝缘层的半导体器件。 本发明的另一个目的是提供一种使用该半导体器件的具有高性能和高可靠性的电子设备。 交替地沉积包含氮的绝缘体，例如氮氧化硅或氮氧化硅，以及添加有添加了氟的氟或氮氧化硅的氮氧化物等氮和氟的绝缘体，从而形成绝缘层。 通过在包含氮的绝缘体之间夹持含有氮和氟的绝缘体，可以防止含有氮和氟的绝缘体吸收水分，从而可以提高介电强度电压。 此外，绝缘体含有氟，使得可以降低介电常数。

公开(公告)号：US20120248432A1

公开(公告)日：2012-10-04

申请号：US13423468

申请日：2012-03-19

申请人： Kosei NODA ,  Noriyoshi SUZUKI

发明人： Kosei NODA ,  Noriyoshi SUZUKI

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/42384 ,  H01L29/66969

摘要： A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

摘要翻译： 通过在包括氧化物半导体膜的晶体管中抑制铟扩散到与氧化物半导体膜接触的绝缘膜中，提高了具有稳定电特性的高度可靠的半导体器件，并且改善了氧化物半导体膜与氧化物半导体膜之间的界面的特性 绝缘膜。 在含有铟的氧化物半导体膜中，表面的铟浓度降低，从而防止铟在氧化物半导体膜上与绝缘膜的扩散接触。 通过降低氧化物半导体膜表面的铟浓度，可以在表面形成实质上不含有铟的层。 通过使用该层作为绝缘膜的一部分，改善了与氧化物半导体膜接触的氧化物半导体膜与绝缘膜之间的界面的特性。