公开(公告)号：US20090309230A1

公开(公告)日：2009-12-17

申请号：US12336884

申请日：2008-12-17

申请人： ZHENJIANG CUI ,  Mehul Naik ,  Christopher D. Bencher ,  Kenneth MacWilliams

发明人： ZHENJIANG CUI ,  Mehul Naik ,  Christopher D. Bencher ,  Kenneth MacWilliams

IPC分类号： H01L21/768 ,  H01L23/535

CPC分类号： H01L23/5222 ,  H01L21/02115 ,  H01L21/02271 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/3146 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76832 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods for patterning films and their resulting structures. In an embodiment, an amorphous carbon mask is formed over a substrate, such as a damascene layer. A spacer layer is deposited over the amorphous carbon mask and the spacer layer is etched to form a spacer and to expose the amorphous carbon mask. The amorphous carbon mask is removed selectively to the spacer to expose the substrate layer. A gap fill layer is deposited around the spacer to cover the substrate layer but expose the spacer. The spacer is removed selectively to form a gap fill mask over the substrate. The pattern of the gap fill mask is transferred, in one implementation, into a damascene layer to remove at least a portion of an IMD and form an air gap.

摘要翻译： 膜图案及其结果的方法。 在一个实施方案中，在诸如镶嵌层的基底上形成无定形碳掩模。 在无定形碳掩模上沉积间隔层，并且蚀刻间隔层以形成间隔物并暴露无定形碳掩模。 无定形碳掩模被选择性地去除到间隔物以暴露衬底层。 间隔填充层沉积在间隔物周围以覆盖基底层，但暴露间隔物。 选择性地移除间隔物以在衬底上形成间隙填充掩模。 间隙填充掩模的图案在一个实施方式中转移到镶嵌层中以去除IMD的至少一部分并形成气隙。