公开(公告)号：US08933768B2

公开(公告)日：2015-01-13

申请号：US13659541

申请日：2012-10-24

Applicant: ZIH Corp.

Inventor： Edward A. Richley ,  Sifen Luo

IPC: H01P1/203 ,  H01P7/08 ,  H01P11/00

CPC classification number: H01P1/20 ,  H01P1/203 ,  H01P1/20336 ,  H01P7/082 ,  H01P11/003 ,  H01P11/008 ,  Y10T29/49016

Abstract: Metallization layer structures for reduced changes in radio frequency characteristics due to registration error and associated methods are provided herein. An example resonator includes a first conductive layer defining an error limiting feature and a second conductive layer. The resonator further includes at least one communication feature configured to electrically couple the first conductive layer and the second conductive layer at a communication position. The error limiting feature is configured to reduce changes in radio frequency characteristics of the resonator due to registration error. Methods of manufacturing resonators are also provided herein.

Abstract translation: 本文提供了用于由于注册错误引起的射频特性的减小的变化的金属化层结构和相关联的方法。 示例性谐振器包括限定误差限制特征的第一导电层和第二导电层。 谐振器还包括至少一个通信特征，其构造成在通信位置处电耦合第一导电层和第二导电层。 误差限制功能被配置为减少由于配准误差引起的谐振器的射频特性的变化。 本文还提供了制造谐振器的方法。

公开(公告)号：US20130099878A1

公开(公告)日：2013-04-25

申请号：US13659541

申请日：2012-10-24

Applicant: ZIH CORP.

Inventor： Edward A. Richley ,  Sifen Luo

IPC: H01P1/20 ,  H01P11/00 ,  H01P7/08

CPC classification number: H01P1/20 ,  H01P1/203 ,  H01P1/20336 ,  H01P7/082 ,  H01P11/003 ,  H01P11/008 ,  Y10T29/49016

Abstract: Metallization layer structures for reduced changes in radio frequency characteristics due to registration error and associated methods are provided herein. An example resonator includes a first conductive layer defining an error limiting feature and a second conductive layer. The resonator further includes at least one communication feature configured to electrically couple the first conductive layer and the second conductive layer at a communication position. The error limiting feature is configured to reduce changes in radio frequency characteristics of the resonator due to registration error. Methods of manufacturing resonators are also provided herein.

公开(公告)号：US09748620B2

公开(公告)日：2017-08-29

申请号：US14561868

申请日：2014-12-05

Applicant: ZIH Corp.

Inventor： Edward A. Richley ,  Sifen Luo

IPC: H01P1/20 ,  H01P11/00 ,  H01P1/203 ,  H01P7/08

CPC classification number: H01P1/20 ,  H01P1/203 ,  H01P1/20336 ,  H01P7/082 ,  H01P11/003 ,  H01P11/008 ,  Y10T29/49016

Abstract: Metallization layer structures for reduced changes in radio frequency characteristics due to registration error and associated methods are provided herein. An example resonator includes a first conductive layer defining an error limiting feature and a second conductive layer. The resonator further includes at least one communication feature configured to electrically couple the first conductive layer and the second conductive layer at a communication position. The error limiting feature is configured to reduce changes in radio frequency characteristics of the resonator due to registration error. Methods of manufacturing resonators are also provided herein.

公开(公告)号：US20150091670A1

公开(公告)日：2015-04-02

申请号：US14561868

申请日：2014-12-05

Applicant: ZIH Corp.

Inventor： Edward A. Richley ,  Sifen Luo

IPC: H01P1/203 ,  H01P11/00

CPC classification number: H01P1/20 ,  H01P1/203 ,  H01P1/20336 ,  H01P7/082 ,  H01P11/003 ,  H01P11/008 ,  Y10T29/49016

Abstract: Metallization layer structures for reduced changes in radio frequency characteristics due to registration error and associated methods are provided herein. An example resonator includes a first conductive layer defining an error limiting feature and a second conductive layer. The resonator further includes at least one communication feature configured to electrically couple the first conductive layer and the second conductive layer at a communication position. The error limiting feature is configured to reduce changes in radio frequency characteristics of the resonator due to registration error. Methods of manufacturing resonators are also provided herein.

Abstract translation: 本文提供了用于由于注册错误引起的射频特性的减小的变化的金属化层结构和相关联的方法。 示例性谐振器包括限定误差限制特征的第一导电层和第二导电层。 谐振器还包括至少一个通信特征，其构造成在通信位置处电耦合第一导电层和第二导电层。 误差限制功能被配置为减少由于配准误差引起的谐振器的射频特性的变化。 本文还提供了制造谐振器的方法。