Method for making low tuning rate single mode PbTe/PbEuSeTe buried
heterostructure tunable diode lasers and arrays
    1.
    发明授权
    Method for making low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays 失效
    低调谐率单模PbTe / PbEuSeTe掩埋异质结构可调谐二极管激光器和阵列的方法

    公开(公告)号:US5028563A

    公开(公告)日:1991-07-02

    申请号:US468842

    申请日:1990-01-23

    摘要: A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitaxy method.

    摘要翻译: 一种PbTe / PbEuSeTe掩埋异质结构可调谐二极管激光器和阵列及其制造方法。 有源区层被埋在含有相反导电类型的铕和硒的两个铅盐半导体层之间,并且具有与有源区层基本上相同的晶格常数。 此外,含铕和硒的含铅硫族化物层的能带隙大于活性掩埋层,折射率小于活性层。 掩埋结构增强了电和光的限制,降低了阈值电流,并提供了稳定的单模激光器。 可以使用锶,钙或锡代替铕。 使用两步分子束外延法制造掩埋激光器和阵列。

    Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers
and arrays
    2.
    发明授权
    Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays 失效
    低调谐率PbTe / PbEuSeTe埋量子阱可调谐二极管激光器和阵列

    公开(公告)号:US5119388A

    公开(公告)日:1992-06-02

    申请号:US616365

    申请日:1990-11-21

    摘要: A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.

    摘要翻译: 一种PbTe / PbEuSeTe埋量子阱二极管激光器和阵列及其制作方法。 量子阱有源区层被埋在具有比有源掩埋层大的能带隙和折射率小于有源层的电和光限制区域之间。 掩埋结构增强了电和光的限制,降低了阈值电流,并提供了稳定的单模激光器。 使用两步分子束外延法制造掩埋激光器和阵列。

    Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable
diode lasers and arrays
    3.
    发明授权
    Low tuning rate single mode PbTe/PbEuSeTe buried heterostructure tunable diode lasers and arrays 失效
    低调谐率单模PbTe / PbEuSeTe掩埋异质结构可调谐二极管激光器和阵列

    公开(公告)号:US4943971A

    公开(公告)日:1990-07-24

    申请号:US314977

    申请日:1989-02-24

    摘要: A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitary method.

    GLYCOPROFILING WITH MULTIPLEXED SUSPENSION ARRAYS
    4.
    发明申请
    GLYCOPROFILING WITH MULTIPLEXED SUSPENSION ARRAYS 审中-公开
    用多重悬挂阵列进行糖化

    公开(公告)号:US20140005069A1

    公开(公告)日:2014-01-02

    申请号:US14001702

    申请日:2012-03-01

    IPC分类号: G01N33/53 G01N33/66

    摘要: The present invention is includes compositions and methods directed to the multiplexed analysis of carbohydrates and carbohydrate containing compounds. The compositions and methods utilize suspension array technology (SAT) and an array of different carbohydrate binding molecules, each carbohydrate binding molecules with a known carbohydrate binding specificity, to obtain a glycoprofile of the carbohydrate structure(s) in a sample. Each carbohydrate binding molecule of a given specificity is linked to the external surface of a population of individually addressable particles.

    摘要翻译: 本发明包括针对碳水化合物和含碳水化合物的化合物的多重分析的组合物和方法。 组合物和方法利用悬浮阵列技术(SAT)和不同碳水化合物结合分子阵列,每种具有已知碳水化合物结合特异性的碳水化合物结合分子,以获得样品中碳水化合物结构的糖基序列。 给定特异性的每个碳水化合物结合分子与单独可寻址颗粒群体的外表面连接。

    Floor waste fitting support
    7.
    发明授权
    Floor waste fitting support 失效
    地板废料配件支撑

    公开(公告)号:US5299836A

    公开(公告)日:1994-04-05

    申请号:US773624

    申请日:1991-11-14

    申请人: Robert J. Woods

    发明人: Robert J. Woods

    IPC分类号: E03C1/12 E03F5/04 F16L5/02

    CPC分类号: E03F5/0407

    摘要: A waste water fitting support assembly for merging seepage water with waste water which has passed through a waste water fitting, when mounted in a support member of the assembly, is disclosed. The assembly includes the support which has a body with a through bore and a flange around the entry end of the bore and a fall and cap member having a tubular body with a flange at one end of the body. The support passes through the fall and cap member and the flange of the support rests with the flange of the fall and cap member. The support bore has an entry portion of large diameter for providing a seepage water receiving zone and an exit portion of lesser diameter and an intermediate transition portion where there is a bore size reducing shoulder with associated abutment means for axially limiting the entry of a waste water fitting into the bore and where there is means for axially sliding frictional engagement by a waste water fitting to centrally position the waste water fitting in the body bore. Seepage water leakage paths extend through the abutment means to connect the seepage water receiving zone with the body bore downstream of the shoulder.

    摘要翻译: PCT No.PCT / AU91 / 00070 Sec。 371日期:1991年11月14日 102(e)1991年11月14日PCT PCT 1991年3月1日PCT公布。 出版物WO91 / 14838 1991年10月3日公开了一种当安装在组件的支撑构件中时,渗漏水与已经通过废水配件的废水并入的废水配件支撑组件。 组件包括支撑件,其具有带有通孔的主体和围绕孔的入口端的凸缘以及具有在主体的一端具有凸缘的管状主体的下降和盖构件。 支撑件穿过坠落盖和盖构件,并且支撑件的凸缘与坠落和盖构件的凸缘相配合。 支撑孔具有大直径的入口部分,用于提供渗透水接收区域和较小直径的出口部分和中间过渡部分,其中存在孔径减小的肩部,具有相关联的邻接装置,用于轴向限制废水的进入 装配到孔中,并且其中存在用于通过废水配件轴向滑动摩擦接合的装置以将废水配件中心定位在身体孔中的装置。 渗水漏水路径通过邻接装置延伸,以将渗水接收区与肩部下游的身体孔连接。