公开(公告)号：US09859686B2

公开(公告)日：2018-01-02

申请号：US14787493

申请日：2014-05-04

申请人： CAMLIN TECHNOLOGIES (SWITZERLAND) LIMITED

发明人： Ferdinand Felder ,  Matthias Fill ,  Hans Zogg ,  Pierluigi Debernardi

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/42 ,  H01S5/04 ,  H01S5/14 ,  H01S5/32

CPC分类号： H01S5/18308 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18344 ,  H01S5/18397 ,  H01S5/3222 ,  H01S5/423 ,  H01S5/426 ,  H01S2301/166 ,  H01S2301/176

摘要： The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighboring region (25) that at least partly surrounds said mesa (24) has a second refractive index (n2)—At least part of said mesa (24) has a first refractive index (n1) and a part of the neighboring region (25) transversally adjacent to said part of the mesa (24) has second refractive index (n 2)—Said first refractive index (n1) is higher than said second refractive index (n2) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI semiconductor gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa (22) may be grown on a single substrate (23). Anti-guiding is prevented by the lower refractive index of the surrounding material (25) improving the single transversal mode operation.

公开(公告)号：US4749952A

公开(公告)日：1988-06-07

申请号：US914516

申请日：1986-10-02

申请人： Takeshi Morimoto

发明人： Takeshi Morimoto

IPC分类号： H01S3/094 ,  G02F1/35 ,  H01S3/0953 ,  H01S5/00 ,  H01S5/06 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/327 ,  H01S5/50 ,  H01S3/09 ,  G02F1/39 ,  H01S3/18

CPC分类号： H01S5/0607 ,  H01S5/50 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/3222 ,  H01S5/327

摘要： An anomalous intensification of the infrared emission from n-InSb having a central wavelength almost equal to the energy gap has been observed, as a result of the cooperation of the magnetoconcentration effect and the photo-excitation, in the temperature range from 80.degree. to 300.degree. K. This suggests that a light amplifier which operates at room temperature can be realized through the process for photons with a wavelength corresponding to the energy gap of the semiconductor material forming the light amplifier concerned. Also the cooperation of the magneto-concentration with the photo-excitation has another useful application as a tunable light source controlled by varying the applied magnetic field through the interband Landau-level transitions at liquid helium temperatures.

摘要翻译： 在80〜300℃的温度范围内，由于磁化效应和光激发的协调，已经观察到具有几乎等于能隙的中心波长的n-InSb的红外发射异常增强 DEGK。这表明在室温下工作的光放大器可以通过具有对应于形成所述光放大器的半导体材料的能隙的波长的光子的过程来实现。 此外，磁浓度与光激发的协调还具有另一有用的应用，作为通过在液氦温度下通过带间兰道级跃迁改变所施加的磁场而控制的可调谐光源。

公开(公告)号：US4747108A

公开(公告)日：1988-05-24

申请号：US879881

申请日：1986-06-30

申请人： Dale L. Partin ,  Joseph P. Heremans

发明人： Dale L. Partin ,  Joseph P. Heremans

IPC分类号： H01S5/22 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3222 ,  H01S5/34

摘要： A double heterojunction lead salt semiconductor diode laser having an optical cavity of PbEuSeTe alloy with a quantum well having reduced Eu concentration disposed to one side of the optical cavity, the optical cavity having a given lattice constant and index of refraction. The optical cavity is sandwiched between two PbEuSeTe alloy confinement layers that are mutually of opposite conductivity type and have substantially the same lattice constant as the optical cavity. A pn junction surface in the optical cavity and preferably on or adjacent the quantum well layer injects charge carriers into the optical cavity. The larger energy band gap between the quantum well layer and its adjacent sandwiching confinement layer strongly confines charge carriers of one type from recombining in the oppositely doped adjacent sandwiching layer. This results in a decreased threshold current (I.sub.th) and a higher maximum operating temperature.

摘要翻译： 一种具有PbEuSeTe合金的光学腔的双异质结铅盐半导体二极管激光器，其具有设置在光腔的一侧的Eu浓度降低的量子阱，该光腔具有给定的晶格常数和折射率。 光腔被夹在两个相互导电类型的PbEuSeTe合金限制层之间，并具有与光腔基本相同的晶格常数。 在光腔中并且优选地在量子阱层上或其附近的pn结表面将电荷载流子注入到光腔中。 量子阱层与其相邻夹层限制层之间的较大的能带间隙强制地限制了一种类型的电荷载体在相反掺杂的相邻夹层中的复合。 这导致阈值电流（Ith）降低和最高工作温度升高。

公开(公告)号：US5310696A

公开(公告)日：1994-05-10

申请号：US768349

申请日：1991-09-30

申请人： Patrick J. McCann ,  Glifton G. Fonstad

发明人： Patrick J. McCann ,  Glifton G. Fonstad

IPC分类号： C30B25/18 ,  H01L21/311 ,  H01L21/368 ,  H01L21/822 ,  H01L27/108 ,  H01L27/12 ,  H01L27/144 ,  H01L27/15 ,  H01S5/02 ,  H01S5/026 ,  H01S5/32 ,  H01L21/20 ,  H01L21/265 ,  H01L21/324 ,  H01L21/84

CPC分类号： H01L21/02439 ,  C30B25/18 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02568 ,  H01L21/02625 ,  H01L21/31111 ,  H01L21/8221 ,  H01L27/1082 ,  H01L27/1203 ,  H01L27/1443 ,  H01S2304/04 ,  H01S5/0261 ,  H01S5/3222 ,  Y10S117/913

摘要： A chemical method for the modification of a substrate surface by compound formation to accomplish heteroepitaxial crystal growth is provided. This method enables the growth of semiconductors on insulators allowing fabrication of three dimensionally integrated devices. Devices include vertical FET's for DRAM storage cells, integrated diode laser/FET's, integrated detector/FET's, and common gate CMOS inverters.

摘要翻译： 提供了通过化合物形成修饰基材表面以实现异质外延晶体生长的化学方法。 该方法能够使绝缘体上的半导体的生长允许制造三维集成器件。 器件包括用于DRAM存储单元的垂直FET，集成二极管激光器/ FET，集成检测器/ FET和公共栅极CMOS反相器。

公开(公告)号：US5119388A

公开(公告)日：1992-06-02

申请号：US616365

申请日：1990-11-21

申请人： Zeev Feit ,  Douglas Kostyk ,  Robert J. Woods

发明人： Zeev Feit ,  Douglas Kostyk ,  Robert J. Woods

IPC分类号： H01L33/00 ,  H01S5/227 ,  H01S5/32 ,  H01S5/40

CPC分类号： H01S5/3222 ,  H01L33/0091 ,  H01S5/32 ,  H01S5/2275 ,  H01S5/4031 ,  Y10S257/914

摘要： A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.

摘要翻译： 一种PbTe / PbEuSeTe埋量子阱二极管激光器和阵列及其制作方法。 量子阱有源区层被埋在具有比有源掩埋层大的能带隙和折射率小于有源层的电和光限制区域之间。 掩埋结构增强了电和光的限制，降低了阈值电流，并提供了稳定的单模激光器。 使用两步分子束外延法制造掩埋激光器和阵列。

公开(公告)号：US4943971A

公开(公告)日：1990-07-24

申请号：US314977

申请日：1989-02-24

申请人： Zeev Fiet ,  Douglas Kostyk ,  Robert J. Woods

发明人： Zeev Fiet ,  Douglas Kostyk ,  Robert J. Woods

IPC分类号： H01L33/00 ,  H01S5/227 ,  H01S5/32 ,  H01S5/40

CPC分类号： H01S5/3222 ,  H01L33/0091 ,  H01S5/2275 ,  H01S5/4031

摘要： A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitary method.

公开(公告)号：US20160104998A1

公开(公告)日：2016-04-14

申请号：US14787493

申请日：2014-05-04

申请人： CAMLIN TECHNOLOGIES (SWITZERLAND) LIMITED

发明人： Ferdinand Felder ,  Matthias Fill ,  Hans Zogg ,  Pierluigi Debernardi

IPC分类号： H01S5/183 ,  H01S5/14 ,  H01S5/04 ,  H01S5/32

CPC分类号： H01S5/18308 ,  H01S5/041 ,  H01S5/14 ,  H01S5/18344 ,  H01S5/18397 ,  H01S5/3222 ,  H01S5/423 ,  H01S5/426 ,  H01S2301/166 ,  H01S2301/176

摘要： The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighboring region (25) that at least partly surrounds said mesa (24) has a second refractive index (n2)—At least part of said mesa (24) has a first refractive index (n1) and a part of the neighboring region (25) transversally adjacent to said part of the mesa (24) has second refractive index (n 2)—Said first refractive index (n1) is higher than said second refractive index (n2) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased. The present invention also relates to a laser device including such a stack, further to a method of operation of such a stack, and also to a method of manufacturing of such a stack. The VECSEL comprises a IV-VI semiconductor gain material grown on the lower mirror and an external cavity mirror. A plurality of mesa (22) may be grown on a single substrate (23). Anti-guiding is prevented by the lower refractive index of the surrounding material (25) improving the single transversal mode operation.

摘要翻译： 本发明涉及一种用于垂直发射激光器件的有源增益层堆叠（21），所述有源增益层堆叠（21）包括半导体材料，其中所述半导体材料被构造成使得其形成至少一个台面（24） 在垂直方向上延伸。 至少部分地围绕所述台面（24）的横向相邻区域（25）具有第二折射率（n2） - 所述台面（24）的至少一部分具有第一折射率（n1）和相邻区域的一部分 与所述台面（24）的所述部分横向相邻的第二折射率（25）具有第二折射率（n 2）-Said的第一折射率（n1）高于所述第二折射率（n2），并且所述台面的横向方向上的直径 24）被选择为使得有源增益层叠层（21）中的横向约束因子增加。 本发明还涉及一种包括这种堆叠的激光装置，还涉及这种堆叠的操作方法，以及制造这种叠层的方法。 VECSEL包括在下反射镜上生长的IV-VI半导体增益材料和外腔镜。 多个台面（22）可以在单个基板（23）上生长。 通过周围材料（25）的较低折射率来改善单一横向模式操作来防止反引导。

公开(公告)号：US07400663B2

公开(公告)日：2008-07-15

申请号：US11051826

申请日：2005-02-04

申请人： Zhisheng Shi

发明人： Zhisheng Shi

IPC分类号： H01S5/00

CPC分类号： H01S5/3222 ,  H01L31/0324

摘要： A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-VI material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to the lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device.

摘要翻译： 一种用于制造器件的生长和制造IV-VI族半导体结构的方法。 在一个实施方案中，通过本发明的方法制备的IV-VI族半导体结构包括在[110]的选定取向上生长的IV-VI族材料。 制造的器件可以是激光，检测器，太阳能电池，热电冷却器件等。由于能量简并性的降低和低缺陷密度，根据本方法制造的激光器件将具有低阈值。 在[110]取向上的生长也允许半导体结构在不同的衬底上外延生长，这可以改善热耗散并因此增加激光器件的工作温度。

公开(公告)号：US5933444A

公开(公告)日：1999-08-03

申请号：US637277

申请日：1996-04-25

申请人： Engin Molva ,  Jean-Louis Pautrat

发明人： Engin Molva ,  Jean-Louis Pautrat

IPC分类号： H01S3/094 ,  H01S3/06 ,  H01S3/113 ,  H01S5/026 ,  H01S5/04 ,  H01S5/183 ,  H01S5/30 ,  H01S5/32 ,  H01S3/091

CPC分类号： H01S3/0627 ,  H01S5/041 ,  H01S3/0604 ,  H01S3/0615 ,  H01S3/09415 ,  H01S3/113 ,  H01S5/026 ,  H01S5/183 ,  H01S5/30 ,  H01S5/3222

摘要： The invention relates to a device for an infrared light emitter comprising a semiconductor element (12) able to emit infrared radiation and a switched microlaser (2, 4, 6, 8) arranged so as to be able to optically pump the semiconductor element.

摘要翻译： 本发明涉及一种用于红外光发射器的装置，其包括能够发射红外辐射的半导体元件（12）和布置成能够光学泵浦半导体元件的开关微激光器（2,4,6,8）。

公开(公告)号：US4577322A

公开(公告)日：1986-03-18

申请号：US543368

申请日：1983-10-19

申请人： Dale L. Partin

发明人： Dale L. Partin

IPC分类号： H01S5/32 ,  H01S3/19 ,  H01L33/00

CPC分类号： H01S5/3222

摘要： A double heterojunction lead salt diode infrared laser having an active region of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region is sandwiched between two lead salt semiconductor layers containing ytterbium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active layer. In addition, the ytterbium-containing lead salt layers have an energy band gap greater than the active layer and an index of refraction less than the active layer. Hence, the laser has lattice matching, as well as enhanced, carrier confinement and optical confinement.

摘要翻译： 具有给定晶格常数，能带隙和折射率的铅盐半导体的有源区的双异质结铅盐二极管红外激光器。 有源区域夹在包含相互导电类型并具有与有源层基本相同的晶格常数的镱的两个铅盐半导体层之间。 此外，含镱的铅盐层的能带隙大于活性层，折射率小于活性层。 因此，激光器具有晶格匹配，以及增强的载流子限制和光学限制。