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公开(公告)号：US08237155B2
公开(公告)日：2012-08-07
申请号：US12492829
申请日：2009-06-26
IPC分类号： H01L35/24
CPC分类号： H01L35/24 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02606 , H01L21/02628 , H01L21/02658 , H01L21/02664 , H01L29/0665 , H01L29/0673 , H01L51/0048 , Y10S977/762 , Y10S977/882
摘要： Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.
摘要翻译： 纳米管电子器件对不同的纳米管类型表现出选择性亲和力。 根据示例性实施例，半导体器件表现出相对于第二类型的纳米管，包括半导体型和金属型纳米管的各种类型，选择性地与第一类型的纳米管相互作用（例如，化学地）处理的衬底。 选择性相互作用用于基于纳米管类型设置器件配置特性。 这种选择性相互作用方法可用于设定器件中纳米管的类型和/或特性。
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公开(公告)号：US20100001255A1
公开(公告)日：2010-01-07
申请号：US12492829
申请日：2009-06-26
IPC分类号： H01L29/06 , H01L21/304 , H01L21/302 , H01L21/208 , H01L21/20
CPC分类号： H01L35/24 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02606 , H01L21/02628 , H01L21/02658 , H01L21/02664 , H01L29/0665 , H01L29/0673 , H01L51/0048 , Y10S977/762 , Y10S977/882
摘要： Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.
摘要翻译： 纳米管电子器件对不同的纳米管类型表现出选择性亲和力。 根据示例性实施例，半导体器件表现出相对于第二类型的纳米管，包括半导体型和金属型纳米管的各种类型，选择性地与第一类型的纳米管相互作用（例如，化学地）处理的衬底。 选择性相互作用用于基于纳米管类型设置器件配置特性。 这种选择性相互作用方法可用于设定器件中纳米管的类型和/或特性。
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公开(公告)号：US09085458B2
公开(公告)日：2015-07-21
申请号：US13526780
申请日：2012-06-19
CPC分类号： H01L35/24 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02606 , H01L21/02628 , H01L21/02658 , H01L21/02664 , H01L29/0665 , H01L29/0673 , H01L51/0048 , Y10S977/762 , Y10S977/882
摘要： Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.
摘要翻译： 纳米管电子器件对不同的纳米管类型表现出选择性亲和力。 根据示例性实施例，半导体器件表现出相对于第二类型的纳米管，包括半导体型和金属型纳米管的各种类型，选择性地与第一类型的纳米管相互作用（例如，化学地）处理的衬底。 选择性相互作用用于基于纳米管类型设置器件配置特性。 这种选择性相互作用方法可用于设定器件中纳米管的类型和/或特性。
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公开(公告)号：US20120258569A1
公开(公告)日：2012-10-11
申请号：US13526780
申请日：2012-06-19
IPC分类号： H01L51/40
CPC分类号： H01L35/24 , B82B3/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02606 , H01L21/02628 , H01L21/02658 , H01L21/02664 , H01L29/0665 , H01L29/0673 , H01L51/0048 , Y10S977/762 , Y10S977/882
摘要： Nanotube electronic devices exhibit selective affinity to disparate nanotube types. According to an example embodiment, a semiconductor device exhibits a treated substrate that selectively interacts (e.g., chemically) with nanotubes of a first type, relative to nanotubes of a second type, the respective types including semiconducting-type and metallic-type nanotubes. The selective interaction is used to set device configuration characteristics based upon the nanotube type. This selective-interaction approach can be used to set the type, and/or characteristics of nanotubes in the device.
摘要翻译： 纳米管电子器件对不同的纳米管类型表现出选择性亲和力。 根据示例性实施例，半导体器件表现出相对于第二类型的纳米管，包括半导体型和金属型纳米管的各种类型，选择性地与第一类型的纳米管相互作用（例如，化学地）处理的衬底。 选择性相互作用用于基于纳米管类型设置器件配置特性。 这种选择性相互作用方法可用于设定器件中纳米管的类型和/或特性。
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