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公开(公告)号：US09014815B2
公开(公告)日：2015-04-21
申请号：US12915631
申请日：2010-10-29
申请人： Zhongping C. Yang , Piotr J. Przybyszewski , Ben W. Herberg , Kevin R. Seifert , Dina L. Williams
发明人： Zhongping C. Yang , Piotr J. Przybyszewski , Ben W. Herberg , Kevin R. Seifert , Dina L. Williams
CPC分类号： A61N1/375 , A61N1/05 , A61N1/086 , A61N1/3718
摘要： A medical device lead is presented that includes an electrode assembly having a first electrode located near a distal end of the electrode assembly and a second electrode located near a proximal end of the electrode assembly. The electrode assembly also includes a conductive elongated coupler that is electrically coupled to the first electrode and capacitively coupled to the second electrode. At low frequencies and DC (e.g., during delivery of stimulation therapy), the capacitive coupling between the conductive elongated coupler and the second electrode presents a high impedance allowing little current to be redirected from the first electrode to the second electrode. However, at high frequencies (e.g., during an MRI scan) the capacitive coupling between the conductive elongated coupler and the second electrode presents a low impedance, resulting in a significant amount of induced current being redirected to the second electrode and dissipated into bodily fluid surrounding the second electrode.
摘要翻译： 提供了一种医疗装置引线，其包括具有位于电极组件的远端附近的第一电极的电极组件和位于电极组件的近端附近的第二电极。 电极组件还包括电耦合到第一电极并电容耦合到第二电极的导电细长耦合器。 在低频和DC（例如，在递送刺激疗法期间），导电细长耦合器和第二电极之间的电容耦合呈现高阻抗，允许将电流从第一电极重定向到第二电极。 然而，在高频（例如，在MRI扫描期间），导电细长耦合器和第二电极之间的电容耦合呈现低阻抗，导致大量的感应电流被重定向到第二电极并且耗散到周围的体液中 第二电极。
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公开(公告)号：US20110118813A1
公开(公告)日：2011-05-19
申请号：US12915631
申请日：2010-10-29
申请人： Zhongping C. Yang , Piotr J. Przybyszewski , Ben W. Herberg , Kevin R. Seifert , Dina L. Williams
发明人： Zhongping C. Yang , Piotr J. Przybyszewski , Ben W. Herberg , Kevin R. Seifert , Dina L. Williams
IPC分类号： A61N1/05
CPC分类号： A61N1/375 , A61N1/05 , A61N1/086 , A61N1/3718
摘要： A medical device lead is presented that includes an electrode assembly having a first electrode located near a distal end of the electrode assembly and a second electrode located near a proximal end of the electrode assembly. The electrode assembly also includes a conductive elongated coupler that is electrically coupled to the first electrode and capacitively coupled to the second electrode. At low frequencies and DC (e.g., during delivery of stimulation therapy), the capacitive coupling between the conductive elongated coupler and the second electrode presents a high impedance allowing little current to be redirected from the first electrode to the second electrode. However, at high frequencies (e.g., during an MRI scan) the capacitive coupling between the conductive elongated coupler and the second electrode presents a low impedance, resulting in a significant amount of induced current being redirected to the second electrode and dissipated into bodily fluid surrounding the second electrode.
摘要翻译： 提供了一种医疗装置引线，其包括具有位于电极组件的远端附近的第一电极的电极组件和位于电极组件的近端附近的第二电极。 电极组件还包括电耦合到第一电极并电容耦合到第二电极的导电细长耦合器。 在低频和DC（例如，在递送刺激疗法期间），导电细长耦合器和第二电极之间的电容耦合呈现高阻抗，允许将电流从第一电极重定向到第二电极。 然而，在高频（例如，在MRI扫描期间），导电细长耦合器和第二电极之间的电容耦合呈现低阻抗，导致大量的感应电流被重定向到第二电极并且耗散到周围的体液中 第二电极。
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3.发明授权Controlling effects caused by exposure of an implantable medical device to a disruptive energy field 有权由植入式医疗设备暴露于破坏性能量场引起的控制效应公开(公告)号：US08494649B2
公开(公告)日：2013-07-23
申请号：US12828081
申请日：2010-06-30
申请人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
发明人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
IPC分类号： A61N1/05
CPC分类号： A61N1/3754 , A61N1/08 , A61N1/3624 , A61N1/3718 , A61N1/37247 , A61N1/37264 , A61N1/37282 , A61N1/3962
摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.
摘要翻译： 描述了用于控制当可植入医疗装置（IMD）受到破坏性能量场时所引起的影响的技术。 IMD可以包括包括一个或多个电极的可植入引线。 IMD还可以包括具有寄生电感的第一分量。 IMD还可以包括具有电抗的第二部件。 在一些示例中，可以基于第一部件的寄生电感来选择第二部件的电抗，使得响应于由电磁能源产生的能量而沿着引线反射的能量的量低于选定的阈值。 在另外的示例中，第一部件的寄生电感和第二部件的电抗被配置为使得响应于电磁能的频率沿着引线反射的能量的量低于选定的阈值。
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4.发明申请CONTROLLING EFFECTS CAUSED BY EXPOSURE OF AN IMPLANTABLE MEDICAL DEVICE TO A DISRUPTIVE ENERGY FIELD 有权将可植入医疗设备暴露于爆炸能量领域的控制效果公开(公告)号：US20110106217A1
公开(公告)日：2011-05-05
申请号：US12828081
申请日：2010-06-30
申请人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
发明人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
IPC分类号： A61N1/08
CPC分类号： A61N1/3754 , A61N1/08 , A61N1/3624 , A61N1/3718 , A61N1/37247 , A61N1/37264 , A61N1/37282 , A61N1/3962
摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.
摘要翻译： 描述了用于控制当可植入医疗装置（IMD）受到破坏性能量场时所引起的影响的技术。 IMD可以包括包括一个或多个电极的可植入引线。 IMD还可以包括具有寄生电感的第一分量。 IMD还可以包括具有电抗的第二部件。 在一些示例中，可以基于第一部件的寄生电感来选择第二部件的电抗，使得响应于由电磁能源产生的能量而沿着引线反射的能量的量低于选定的阈值。 在另外的示例中，第一部件的寄生电感和第二部件的电抗被配置为使得响应于电磁能的频率沿着引线反射的能量的量低于选定的阈值。
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5.发明授权Controlling effects caused by exposure of an implantable medical device to a disruptive energy field 有权由植入式医疗设备暴露于破坏性能量场引起的控制效应公开(公告)号：US08761886B2
公开(公告)日：2014-06-24
申请号：US12828097
申请日：2010-06-30
申请人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
发明人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
CPC分类号： A61N1/3754 , A61N1/08 , A61N1/3624 , A61N1/3718 , A61N1/37247 , A61N1/37264 , A61N1/37282 , A61N1/3962
摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.
摘要翻译： 描述了用于控制当可植入医疗装置（IMD）受到破坏性能量场时所引起的影响的技术。 IMD可以包括包括一个或多个电极的可植入引线。 IMD还可以包括具有寄生电感的第一分量。 IMD还可以包括具有电抗的第二部件。 在一些示例中，可以基于第一部件的寄生电感来选择第二部件的电抗，使得响应于由电磁能源产生的能量而沿着引线反射的能量的量低于选定的阈值。 在另外的示例中，第一部件的寄生电感和第二部件的电抗被配置为使得响应于电磁能的频率沿着引线反射的能量的量低于选定的阈值。
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6.发明申请公开(公告)号：US20110106218A1
公开(公告)日：2011-05-05
申请号：US12828097
申请日：2010-06-30
申请人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
发明人： Christopher C. Stancer , Piotr J. Przybyszewski , Sandy K. Wixon , Joel Peltier , Sung-Min Park , David E. Manahan , Jonathan Edmonson , Ben W. Herberg
IPC分类号： A61N1/08
CPC分类号： A61N1/3754 , A61N1/08 , A61N1/3624 , A61N1/3718 , A61N1/37247 , A61N1/37264 , A61N1/37282 , A61N1/3962
摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.
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7.发明授权Configuring operating parameters of a medical device based on a type of source of a disruptive energy field 有权根据破坏性能源的来源类型配置医疗设备的运行参数公开(公告)号：US09205268B2
公开(公告)日：2015-12-08
申请号：US12648573
申请日：2009-12-29
CPC分类号： A61N1/3718 , A61N1/08 , A61N1/086 , A61N1/3706 , G01R33/288
摘要： An implantable medical device (IMD) configures one or more operating parameters of the IMD based on a type of source of a disruptive energy field to which the IMD is exposed. The disruptive energy field may, in one example, include magnetic and/or radio frequency (RF) fields generated by an MRI scanner. In one aspect, the IMD may distinguish between different types of MRI scanners and select an exposure operating mode tailored to reduce the effects of the particular type of MRI scanner. In another aspect, the IMD may adjust one or more operating parameters that will be used when the IMD returns to a normal operating mode after exposure to the MRI scanner based on the type of MRI scanner to which the IMD is exposed.
摘要翻译： 可植入医疗装置（IMD）根据IMD所暴露的破坏性能场的源的类型来配置IMD的一个或多个操作参数。 在一个示例中，破坏性能量场可以包括由MRI扫描仪产生的磁场和/或射频（RF）场。 在一个方面，IMD可以区分不同类型的MRI扫描仪，并选择定制的曝光操作模式以减少特定类型的MRI扫描仪的影响。 在另一方面，当IMD暴露于MRI扫描仪之后IMD返回到正常操作模式时，IMD可以调整一个或多个操作参数，该操作参数基于IMD所暴露的MRI扫描仪的类型。
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公开(公告)号：US09958515B2
公开(公告)日：2018-05-01
申请号：US12648547
申请日：2009-12-29
CPC分类号： G01R33/288 , A61N1/3718
摘要： An implantable medical device (IMD) configures one or more operating parameters of the IMD based on a type of source of a disruptive energy field to which the IMD is exposed. The disruptive energy field may, in one example, include magnetic and/or radio frequency (RF) fields generated by an MRI scanner. In one aspect, the IMD may distinguish between different types of MRI scanners and select an exposure operating mode tailored to reduce the effects of the particular type of MRI scanner. In another aspect, the IMD may adjust one or more operating parameters that will be used when the IMD returns to a normal operating mode after exposure to the MRI scanner based on the type of MRI scanner to which the IMD is exposed.
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公开(公告)号：US20110106212A1
公开(公告)日：2011-05-05
申请号：US12648547
申请日：2009-12-29
IPC分类号： A61N1/08
CPC分类号： G01R33/288 , A61N1/3718
摘要： An implantable medical device (IMD) configures one or more operating parameters of the IMD based on a type of source of a disruptive energy field to which the IMD is exposed. The disruptive energy field may, in one example, include magnetic and/or radio frequency (RF) fields generated by an MRI scanner. In one aspect, the IMD may distinguish between different types of MRI scanners and select an exposure operating mode tailored to reduce the effects of the particular type of MRI scanner. In another aspect, the IMD may adjust one or more operating parameters that will be used when the IMD returns to a normal operating mode after exposure to the MRI scanner based on the type of MRI scanner to which the IMD is exposed.
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10.发明申请公开(公告)号：US20110106204A1
公开(公告)日：2011-05-05
申请号：US12648573
申请日：2009-12-29
IPC分类号： A61N1/08
CPC分类号： A61N1/3718 , A61N1/08 , A61N1/086 , A61N1/3706 , G01R33/288
摘要： An implantable medical device (IMD) configures one or more operating parameters of the IMD based on a type of source of a disruptive energy field to which the IMD is exposed. The disruptive energy field may, in one example, include magnetic and/or radio frequency (RF) fields generated by an MRI scanner. In one aspect, the IMD may distinguish between different types of MRI scanners and select an exposure operating mode tailored to reduce the effects of the particular type of MRI scanner. In another aspect, the IMD may adjust one or more operating parameters that will be used when the IMD returns to a normal operating mode after exposure to the MRI scanner based on the type of MRI scanner to which the IMD is exposed.
摘要翻译： 可植入医疗装置（IMD）根据IMD所暴露的破坏性能场的源的类型来配置IMD的一个或多个操作参数。 在一个示例中，破坏性能量场可以包括由MRI扫描仪产生的磁场和/或射频（RF）场。 在一个方面，IMD可以区分不同类型的MRI扫描仪，并选择定制的曝光操作模式以减少特定类型的MRI扫描仪的影响。 在另一方面，当IMD暴露于MRI扫描仪之后IMD返回到正常操作模式时，IMD可以调整一个或多个操作参数，该操作参数基于IMD所暴露的MRI扫描仪的类型。
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