公开(公告)号：US08494649B2

公开(公告)日：2013-07-23

申请号：US12828081

申请日：2010-06-30

申请人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

发明人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

IPC分类号： A61N1/05

CPC分类号： A61N1/3754 ,  A61N1/08 ,  A61N1/3624 ,  A61N1/3718 ,  A61N1/37247 ,  A61N1/37264 ,  A61N1/37282 ,  A61N1/3962

摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.

摘要翻译： 描述了用于控制当可植入医疗装置（IMD）受到破坏性能量场时所引起的影响的技术。 IMD可以包括包括一个或多个电极的可植入引线。 IMD还可以包括具有寄生电感的第一分量。 IMD还可以包括具有电抗的第二部件。 在一些示例中，可以基于第一部件的寄生电感来选择第二部件的电抗，使得响应于由电磁能源产生的能量而沿着引线反射的能量的量低于选定的阈值。 在另外的示例中，第一部件的寄生电感和第二部件的电抗被配置为使得响应于电磁能的频率沿着引线反射的能量的量低于选定的阈值。

公开(公告)号：US20110106217A1

公开(公告)日：2011-05-05

申请号：US12828081

申请日：2010-06-30

申请人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

发明人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

IPC分类号： A61N1/08

CPC分类号： A61N1/3754 ,  A61N1/08 ,  A61N1/3624 ,  A61N1/3718 ,  A61N1/37247 ,  A61N1/37264 ,  A61N1/37282 ,  A61N1/3962

摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.

摘要翻译： 描述了用于控制当可植入医疗装置（IMD）受到破坏性能量场时所引起的影响的技术。 IMD可以包括包括一个或多个电极的可植入引线。 IMD还可以包括具有寄生电感的第一分量。 IMD还可以包括具有电抗的第二部件。 在一些示例中，可以基于第一部件的寄生电感来选择第二部件的电抗，使得响应于由电磁能源产生的能量而沿着引线反射的能量的量低于选定的阈值。 在另外的示例中，第一部件的寄生电感和第二部件的电抗被配置为使得响应于电磁能的频率沿着引线反射的能量的量低于选定的阈值。

公开(公告)号：US08761886B2

公开(公告)日：2014-06-24

申请号：US12828097

申请日：2010-06-30

申请人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

发明人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

IPC分类号： A61N1/08 ,  A61N1/16

CPC分类号： A61N1/3754 ,  A61N1/08 ,  A61N1/3624 ,  A61N1/3718 ,  A61N1/37247 ,  A61N1/37264 ,  A61N1/37282 ,  A61N1/3962

摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.

摘要翻译： 描述了用于控制当可植入医疗装置（IMD）受到破坏性能量场时所引起的影响的技术。 IMD可以包括包括一个或多个电极的可植入引线。 IMD还可以包括具有寄生电感的第一分量。 IMD还可以包括具有电抗的第二部件。 在一些示例中，可以基于第一部件的寄生电感来选择第二部件的电抗，使得响应于由电磁能源产生的能量而沿着引线反射的能量的量低于选定的阈值。 在另外的示例中，第一部件的寄生电感和第二部件的电抗被配置为使得响应于电磁能的频率沿着引线反射的能量的量低于选定的阈值。

公开(公告)号：US20110106218A1

公开(公告)日：2011-05-05

申请号：US12828097

申请日：2010-06-30

申请人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

发明人： Christopher C. Stancer ,  Piotr J. Przybyszewski ,  Sandy K. Wixon ,  Joel Peltier ,  Sung-Min Park ,  David E. Manahan ,  Jonathan Edmonson ,  Ben W. Herberg

IPC分类号： A61N1/08

CPC分类号： A61N1/3754 ,  A61N1/08 ,  A61N1/3624 ,  A61N1/3718 ,  A61N1/37247 ,  A61N1/37264 ,  A61N1/37282 ,  A61N1/3962

摘要： Techniques are described for controlling effects caused when an implantable medical device (IMD) is subject to a disruptive energy field. The IMD may include an implantable lead that includes one or more electrodes. The IMD may further include a first component having a parasitic inductance. The IMD may further include a second component having a reactance. In some examples, the reactance of the second component may be selected based on the parasitic inductance of the first component such that an amount of energy reflected along the lead in response to energy produced by an electromagnetic energy source is below a selected threshold. In additional examples, the parasitic inductance of the first component and the reactance of the second component are configured such that an amount of energy reflected along the lead in response to a frequency of electromagnetic energy is below a selected threshold.

公开(公告)号：US09014815B2

公开(公告)日：2015-04-21

申请号：US12915631

申请日：2010-10-29

申请人： Zhongping C. Yang ,  Piotr J. Przybyszewski ,  Ben W. Herberg ,  Kevin R. Seifert ,  Dina L. Williams

发明人： Zhongping C. Yang ,  Piotr J. Przybyszewski ,  Ben W. Herberg ,  Kevin R. Seifert ,  Dina L. Williams

IPC分类号： A61N1/05 ,  A61N1/375 ,  A61N1/37 ,  A61N1/08

CPC分类号： A61N1/375 ,  A61N1/05 ,  A61N1/086 ,  A61N1/3718

摘要： A medical device lead is presented that includes an electrode assembly having a first electrode located near a distal end of the electrode assembly and a second electrode located near a proximal end of the electrode assembly. The electrode assembly also includes a conductive elongated coupler that is electrically coupled to the first electrode and capacitively coupled to the second electrode. At low frequencies and DC (e.g., during delivery of stimulation therapy), the capacitive coupling between the conductive elongated coupler and the second electrode presents a high impedance allowing little current to be redirected from the first electrode to the second electrode. However, at high frequencies (e.g., during an MRI scan) the capacitive coupling between the conductive elongated coupler and the second electrode presents a low impedance, resulting in a significant amount of induced current being redirected to the second electrode and dissipated into bodily fluid surrounding the second electrode.

摘要翻译： 提供了一种医疗装置引线，其包括具有位于电极组件的远端附近的第一电极的电极组件和位于电极组件的近端附近的第二电极。 电极组件还包括电耦合到第一电极并电容耦合到第二电极的导电细长耦合器。 在低频和DC（例如，在递送刺激疗法期间），导电细长耦合器和第二电极之间的电容耦合呈现高阻抗，允许将电流从第一电极重定向到第二电极。 然而，在高频（例如，在MRI扫描期间），导电细长耦合器和第二电极之间的电容耦合呈现低阻抗，导致大量的感应电流被重定向到第二电极并且耗散到周围的体液中 第二电极。

公开(公告)号：US20110118813A1

公开(公告)日：2011-05-19

申请号：US12915631

申请日：2010-10-29

申请人： Zhongping C. Yang ,  Piotr J. Przybyszewski ,  Ben W. Herberg ,  Kevin R. Seifert ,  Dina L. Williams

发明人： Zhongping C. Yang ,  Piotr J. Przybyszewski ,  Ben W. Herberg ,  Kevin R. Seifert ,  Dina L. Williams

IPC分类号： A61N1/05

CPC分类号： A61N1/375 ,  A61N1/05 ,  A61N1/086 ,  A61N1/3718

摘要： A medical device lead is presented that includes an electrode assembly having a first electrode located near a distal end of the electrode assembly and a second electrode located near a proximal end of the electrode assembly. The electrode assembly also includes a conductive elongated coupler that is electrically coupled to the first electrode and capacitively coupled to the second electrode. At low frequencies and DC (e.g., during delivery of stimulation therapy), the capacitive coupling between the conductive elongated coupler and the second electrode presents a high impedance allowing little current to be redirected from the first electrode to the second electrode. However, at high frequencies (e.g., during an MRI scan) the capacitive coupling between the conductive elongated coupler and the second electrode presents a low impedance, resulting in a significant amount of induced current being redirected to the second electrode and dissipated into bodily fluid surrounding the second electrode.

摘要翻译： 提供了一种医疗装置引线，其包括具有位于电极组件的远端附近的第一电极的电极组件和位于电极组件的近端附近的第二电极。 电极组件还包括电耦合到第一电极并电容耦合到第二电极的导电细长耦合器。 在低频和DC（例如，在递送刺激疗法期间），导电细长耦合器和第二电极之间的电容耦合呈现高阻抗，允许将电流从第一电极重定向到第二电极。 然而，在高频（例如，在MRI扫描期间），导电细长耦合器和第二电极之间的电容耦合呈现低阻抗，导致大量的感应电流被重定向到第二电极并且耗散到周围的体液中 第二电极。

公开(公告)号：US08467882B2

公开(公告)日：2013-06-18

申请号：US13074162

申请日：2011-03-29

申请人： Michael L. Ellingson ,  Hyun J. Yoon ,  Ben W. Herberg

发明人： Michael L. Ellingson ,  Hyun J. Yoon ,  Ben W. Herberg

IPC分类号： A61N1/00

CPC分类号： A61N1/3718

摘要： An IMD may transition to an MRI mode automatically in response to detecting one or more conditions indicative of the presence of a strong magnetic field. Large static magnetic fields, such as those produced by an MRI device, may interact with the blood of a patient as it flows through the magnetic field to produce a voltage, a phenomenon referred to as the magnetohydrodynamic (MHD) effect. The voltage produced by the MHD effect is proportional to the strength of the magnetic field. As such, the voltage produced by blood flow in the strong magnetic field of an MRI device may result in a change in a characteristic of an electrogram (EGM). The IMD may detect the change in the characteristic of the EGM caused by the MHD effect and transition to operation in the MRI mode in response to at least the change in the EGM.

公开(公告)号：US20120253425A1

公开(公告)日：2012-10-04

申请号：US13074143

申请日：2011-03-29

申请人： Hyun J. Yoon ,  Ben W. Herberg ,  Michael L. Ellingson

发明人： Hyun J. Yoon ,  Ben W. Herberg ,  Michael L. Ellingson

IPC分类号： A61N1/36

CPC分类号： A61N1/3931 ,  A61N1/3688 ,  A61N1/3718 ,  A61N1/37217

摘要： An IMD may transition to an MRI mode automatically in response to detecting one or more conditions indicative of the presence of a strong magnetic field. Large static magnetic fields, such as those produced by an MRI device, may interact with the blood of a patient as it flows through the magnetic field to produce a voltage, a phenomenon referred to as the magnetohydrodynamic (MHD) effect. The voltage produced by the MHD effect is proportional to the strength of the magnetic field. As such, the voltage produced by blood flow in the strong magnetic field of an MRI device may result in a change in a characteristic of an electrogram (EGM). The IMD may detect the change in the characteristic of the EGM caused by the MHD effect and transition to operation in the MRI mode in response to at least the change in the EGM.

公开(公告)号：US06933599B2

公开(公告)日：2005-08-23

申请号：US10694146

申请日：2003-10-27

申请人： Bennett A. Joiner ,  Yaping Zhou ,  Ben W. Herberg

发明人： Bennett A. Joiner ,  Yaping Zhou ,  Ben W. Herberg

IPC分类号： H01L20060101 ,  H01L23/48 ,  H01L23/50 ,  H01L23/552 ,  H01L23/66

CPC分类号： H01L23/552 ,  H01L23/50 ,  H01L23/66 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/49052 ,  H01L2224/49174 ,  H01L2224/49175 ,  H01L2224/49176 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00

摘要： A semiconductor device has a die (10) overlying and electrically connected to a support structure (11), such as a substrate or a lead frame, via a plurality of interconnects. Aggressor interconnects (32, 38) are noise sources to victim interconnects (29, 59) carrying sensitive signals. An arrangement of shield interconnects (51-58) surround the victim interconnect (29, 59) in a cage-like structure to significantly block noise from the aggressor interconnect. In one form the shield interconnects are ground or power supply and the victim interconnect may be, for example, a clock signal or an RF signal. The number of shield interconnects and the number of protected victim interconnects varies depending upon design requirements. Either wire bonding or other interconnect technology (e.g. bump) is applicable.

摘要翻译： 半导体器件具有经由多个互连件覆盖并电连接到诸如衬底或引线框架的支撑结构（11）的管芯（10）。 侵入者互连（32,38）是携带敏感信号的受害互连（29,59）的噪声源。 屏蔽互连（51-58）的布置以笼状结构围绕受害互连（29,59），以显着地阻止来自侵扰者互连的噪声。 在一种形式中，屏蔽互连是接地或电源，并且受害互连可以是例如时钟信号或RF信号。 屏蔽互连的数量和受保护的受干扰互连的数量根据设计要求而变化。 引线接合或其他互连技术（例如凸块）都可应用。

公开(公告)号：US20120253426A1

公开(公告)日：2012-10-04

申请号：US13074162

申请日：2011-03-29

申请人： Michael L. Ellingson ,  Hyun J. Yoon ,  Ben W. Herberg

发明人： Michael L. Ellingson ,  Hyun J. Yoon ,  Ben W. Herberg

IPC分类号： A61N1/36

CPC分类号： A61N1/3718

摘要： An IMD may transition to an MRI mode automatically in response to detecting one or more conditions indicative of the presence of a strong magnetic field. Large static magnetic fields, such as those produced by an MRI device, may interact with the blood of a patient as it flows through the magnetic field to produce a voltage, a phenomenon referred to as the magnetohydrodynamic (MHD) effect. The voltage produced by the MHD effect is proportional to the strength of the magnetic field. As such, the voltage produced by blood flow in the strong magnetic field of an MRI device may result in a change in a characteristic of an electrogram (EGM). The IMD may detect the change in the characteristic of the EGM caused by the MHD effect and transition to operation in the MRI mode in response to at least the change in the EGM.

摘要翻译： 响应于检测到指示存在强磁场的一个或多个条件，IMD可以自动地转换到MRI模式。 诸如由MRI装置产生的那些的大静态磁场可以在患者的血液流过磁场时与血液相互作用以产生被称为磁流体动力学（MHD）效应的电压。 由MHD效应产生的电压与磁场的强度成比例。 因此，在MRI装置的强磁场中由血流产生的电压可能导致电描记图（EGM）的特性的变化。 IMD可以根据至少EGM的变化来检测由MHD效应引起的EGM特征的变化以及在MRI模式中的转换到操作。