Apparatus and method for controlling inverter
    5.
    发明授权
    Apparatus and method for controlling inverter 失效
    控制逆变器的装置及方法

    公开(公告)号:US07881080B2

    公开(公告)日:2011-02-01

    申请号:US12088542

    申请日:2006-12-28

    IPC分类号: H02M1/12 H02M1/14

    CPC分类号: H02P23/03 H02P2205/01

    摘要: An apparatus and method for controlling an inverter capable of enhancing reliability of current measurement by ensuring an optimal time for which effective voltage vectors are applied to detect a three-phase current according to a phase current and sizes of the effective voltage vectors, the apparatus comprising a space voltage modulator that generates and outputs effective voltage vectors based upon a voltage command value, and a low modulation determiner that determines whether the effective voltage vectors are located within a low modulation region, and outputs a low modulation switching control signal or a normal modulation switching control signal according to the determination.

    摘要翻译: 一种用于控制逆变器的装置和方法,其能够通过确保施加有效电压矢量的最佳时间来根据有效电压矢量的相电流和大小检测三相电流来提高电流测量的可靠性,该装置包括 空间电压调制器,其基于电压指令值产生并输出有效电压矢量;以及低调制确定器,其确定有效电压矢量是否位于低调制区域内,并输出低调制切换控制信号或正常调制 切换控制信号根据确定。

    INTEGRATED CIRCUIT INCLUDING A FUSING CIRCUIT CAPABLE FOR PROTECTING A FUSING SPARK
    6.
    发明申请
    INTEGRATED CIRCUIT INCLUDING A FUSING CIRCUIT CAPABLE FOR PROTECTING A FUSING SPARK 审中-公开
    集成电路,包括用于保护熔断器的熔断电路

    公开(公告)号:US20100164679A1

    公开(公告)日:2010-07-01

    申请号:US12643020

    申请日:2009-12-21

    IPC分类号: H01H85/04

    摘要: An integrated circuit includes a first inner circuit including at least one first semiconductor device, a second inner circuit including at least one second semiconductor device, and a fusing circuit connected between the first inner circuit and the second inner circuit to perform a fusing operation which electrically disconnects the first inner circuit from the second inner circuit through a fusing voltage. The fusing circuit bypasses a spark current occurring during the fusing operation to a ground power source so as not to flow the spark current into the first inner circuit and the second inner circuit.

    摘要翻译: 一种集成电路包括:第一内部电路,包括至少一个第一半导体器件,包括至少一个第二半导体器件的第二内部电路和连接在第一内部电路和第二内部电路之间的熔断电路,以执行电气操作, 通过熔断电压将第一内部电路与第二内部电路断开。 熔断电路将熔融操作期间发生的火花电流旁路到地电源,以使火花电流不流入第一内部电路和第二内部电路。

    Apparatus and Method for Controlling Inverter
    7.
    发明申请
    Apparatus and Method for Controlling Inverter 失效
    逆变器控制装置及方法

    公开(公告)号:US20080225561A1

    公开(公告)日:2008-09-18

    申请号:US12088542

    申请日:2006-12-28

    IPC分类号: H02M7/44

    CPC分类号: H02P23/03 H02P2205/01

    摘要: An apparatus and method for controlling an inverter capable of enhancing reliability of current measurement by ensuring an optimal time for which effective voltage vectors are applied to detect a three-phase current according to a phase current and sizes of the effective voltage vectors, the apparatus comprising a space voltage modulator that generates and outputs effective voltage vectors based upon a voltage command value, and a low modulation determiner that determines whether the effective voltage vectors are located within a low modulation region, and outputs a low modulation switching control signal or a normal modulation switching control signal according to the determination.

    摘要翻译: 一种用于控制逆变器的装置和方法,其能够通过确保施加有效电压矢量的最佳时间来根据有效电压矢量的相电流和大小检测三相电流来提高电流测量的可靠性,该装置包括 空间电压调制器,其基于电压指令值产生并输出有效电压矢量;以及低调制确定器,其确定有效电压矢量是否位于低调制区域内,并输出低调制切换控制信号或正常调制 切换控制信号根据确定。

    APPARATUS AND METHOD FOR PROVIDING LOCATION INFORMATION
    8.
    发明申请
    APPARATUS AND METHOD FOR PROVIDING LOCATION INFORMATION 审中-公开
    用于提供位置信息的装置和方法

    公开(公告)号:US20130237248A1

    公开(公告)日:2013-09-12

    申请号:US13989700

    申请日:2011-11-24

    IPC分类号: H04W24/00

    摘要: A method and apparatus for providing location information are provided. The method includes estimating location information is estimated, calculating an error value of the estimated location information, controlling activation of a location determination module according to the error value, and providing location information using at least one of the estimated location information and location information determined by the location determination module.

    摘要翻译: 提供了一种用于提供位置信息的方法和装置。 所述方法包括估计位置信息,估计位置信息的误差值,根据误差值控制位置确定模块的激活,以及使用由所述估计位置信息和位置信息确定的位置信息中的至少一个来提供位置信息 位置确定模块。

    MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF
    10.
    发明申请
    MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF 审中-公开
    多电感耦合等离子体反应器及其方法

    公开(公告)号:US20110204023A1

    公开(公告)日:2011-08-25

    申请号:US12715522

    申请日:2010-03-02

    IPC分类号: C23F1/00 C23F1/08

    摘要: Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed.

    摘要翻译: 公开了一种多电感耦合等离子体反应器及其方法。 在多电感耦合等离子体反应方法中,用于增加要处理的衬底的特定部分的蚀刻方法包括蚀刻要处理的衬底的特定部分; 以及在蚀刻的特定部分的表面上沉积钝化层,其中反复进行蚀刻和沉积步骤,并且当存在由中心等离子体源和外围等离子体源形成的等离子体时,执行两个步骤之一。 根据本发明的多电感耦合等离子体反应器及其方法,由于中心等离子体源和外围源分别设置,因此可以在衬底的整个区域上均匀地处理等离子体。 此外,可以使用在中心等离子体源和外围等离子体源之间接地的防干扰电极在等离子体反应器中形成无电干扰的独立多等离子体区域。 此外,由中央等离子体源和外围等离子体源形成的等离子体用于深刻蚀刻待处理衬底的特定部分。