公开(公告)号：US12174548B2

公开(公告)日：2024-12-24

申请号：US17297297

申请日：2019-11-11

Applicant: ams AG

Inventor： Gerhard Eilmsteiner ,  Primoz Kusar

IPC: G03F7/00 ,  H01L21/311 ,  H01L31/0216

Abstract: Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask. An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.

公开(公告)号：US20210405541A1

公开(公告)日：2021-12-30

申请号：US17297297

申请日：2019-11-11

Applicant: ams AG

Inventor： Gerhard Eilmsteiner ,  Primoz Kusar

IPC: G03F7/20 ,  H01L21/311 ,  H01L31/0216

Abstract: Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.