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公开(公告)号：US20200271516A1
公开(公告)日：2020-08-27
申请号：US16651194
申请日：2018-08-30
Applicant: ams AG
Inventor： Hubert Enichlmair , Gerhard Eilmsteiner
Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array. Furthermore, a method for manufacturing an optical sensing device is provided.
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公开(公告)号：US09766546B2
公开(公告)日：2017-09-19
申请号：US14910670
申请日：2014-07-25
Applicant: ams AG
Inventor： Gerhard Eilmsteiner , Raimund Hoffmann
Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.
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公开(公告)号：US12072235B2
公开(公告)日：2024-08-27
申请号：US17263244
申请日：2019-07-26
Applicant: ams AG
Inventor： Gerhard Eilmsteiner , Desislava Oppel , Deborah Morecroft , Jens Hofrichter
CPC classification number: G01J1/0492 , G01J1/0474 , G01J1/0488 , G01J3/0205 , G01J3/51 , G01T1/2002 , G01T1/2008 , G02B5/28 , G01J2003/1226 , G01J2003/123 , G01J2003/1239 , G02B5/284 , G02B5/288
Abstract: A filter assembly includes an incident medium, a spacer, at least one dielectric filter and an exit medium. The spacer is arranged between the incident medium and the at least one dielectric filter such that the incident medium and the at least one dielectric filter are spaced apart by a working distance and thereby enclose a medium of lower index of refraction than the incident medium. The at least one dielectric filter is arranged on the exit medium.
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公开(公告)号：US12259497B2
公开(公告)日：2025-03-25
申请号：US17415301
申请日：2019-12-03
Applicant: ams AG
Abstract: An optical device includes an emitter operable to emit a first light wave. The optical device also includes a detector operable to detect a second light wave that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave that is based on the first light wave. The optical device further includes an interference filter disposed on the detector. The interference filter includes a first filter portion and a second filter portion having a first set of layers formed from a first material and a second set of layers formed from a second, different material. The interference filter is operable to attenuate undesired light waves in multiple distinct environments based on the first and second sets of layers in the second filter portion.
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公开(公告)号：US12218162B2
公开(公告)日：2025-02-04
申请号：US17634665
申请日：2020-07-21
Applicant: ams AG
Inventor： Patrik Pertl , Gerhard Eilmsteiner
IPC: H01L27/146 , G02B1/116
Abstract: An optoelectronic device comprises a substrate with a photosensitive structure, a dielectric layer on a main surface of the substrate, the dielectric layer having a top surface facing away from the substrate. At least one wiring layer is arranged in the dielectric layer in places and at least one contact area is formed by a portion of the at least one wiring layer. An opening is formed at the top surface of the dielectric layer, the opening extending towards the contact area. An optical element is arranged on the top surface of the dielectric layer above the photosensitive structure and an optical filter is arranged on the top surface of the dielectric layer, the optical filter being electrically conductive, covering a portion of the optical element and being in electrical contact with the contact area. Furthermore, a method for producing an optoelectronic device is provided.
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Patent Agency Ranking
公开(公告)号：US20190109254A1
公开(公告)日：2019-04-11
申请号：US16088576
申请日：2017-04-07
Applicant: ams AG
Inventor： Frederic Roger , Gerhard Eilmsteiner , Eugene G. Dierschke
IPC: H01L31/103 , H01L31/0216 , H01L31/18
Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer.
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公开(公告)号：US12174548B2
公开(公告)日：2024-12-24
申请号：US17297297
申请日：2019-11-11
Applicant: ams AG
Inventor： Gerhard Eilmsteiner , Primoz Kusar
IPC: G03F7/00 , H01L21/311 , H01L31/0216
Abstract: Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask. An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.
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公开(公告)号：US12038533B2
公开(公告)日：2024-07-16
申请号：US17057631
申请日：2019-05-20
Applicant: ams AG
Inventor： Matt Kroese , Gerhard Eilmsteiner , Josef Kriebernegg , Desislava Oppel
CPC classification number: G01S7/4813 , G01S7/4814 , G01S7/4816 , G01S17/04
Abstract: An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.
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公开(公告)号：US20210405541A1
公开(公告)日：2021-12-30
申请号：US17297297
申请日：2019-11-11
Applicant: ams AG
Inventor： Gerhard Eilmsteiner , Primoz Kusar
IPC: G03F7/20 , H01L21/311 , H01L31/0216
Abstract: Forming a three-dimensional structure includes applying photoresist on a layer and using a photolithography system to expose the photoresist. The photolithography system includes a photomask having a pattern thereon, where the pattern provides varying pattern density across a surface of the photomask and has a pitch that is less than a resolution of the photolithography system. The method includes subsequently developing the photoresist such that photoresist remaining on the layer has a three-dimensional profile defined by the photomask An isotropic etchant is used to etch the layer such that the three-dimensional profile of the photoresist is transferred to the layer.
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公开(公告)号：US10976200B2
公开(公告)日：2021-04-13
申请号：US16651194
申请日：2018-08-30
Applicant: ams AG
Inventor： Hubert Enichlmair , Gerhard Eilmsteiner
Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array. Furthermore, a method for manufacturing an optical sensing device is provided.
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