公开(公告)号：US09766546B2

公开(公告)日：2017-09-19

申请号：US14910670

申请日：2014-07-25

Applicant: ams AG

Inventor： Gerhard Eilmsteiner ,  Raimund Hoffmann

IPC: G03F7/20 ,  G03F1/54 ,  G03F7/32 ,  G03F7/16 ,  G03F1/50

CPC classification number: G03F7/2022 ,  G03F1/50 ,  G03F1/54 ,  G03F7/168 ,  G03F7/20 ,  G03F7/32

Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.