公开(公告)号：US20230208110A1

公开(公告)日：2023-06-29

申请号：US17919843

申请日：2021-04-21

Applicant: ams-OSRAM International GmbH

Inventor： Peter FUCHS ,  Bruno JENTZSCH ,  Hubert HALBRITTER ,  Martin Rudolf BEHRINGER ,  Alvaro GOMEZ-IGLESIAS ,  Christian LAUER ,  Dean Maximilian SCHOKE ,  Tomasz SWIETLIK

IPC: H01S5/40 ,  G01S17/88 ,  H01S5/30

CPC classification number: H01S5/4043 ,  G01S17/88 ,  H01S5/3095

Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength λ0 of the laser to λ0+Δλ from a value R0, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.