公开(公告)号：US20240332444A1

公开(公告)日：2024-10-03

申请号：US18699385

申请日：2022-08-11

Applicant: AMS-OSRAM International GmbH

Inventor： Alvaro GOMEZ-IGLESIAS ,  Norwin VON MALM ,  Tansen VARGHESE ,  Dirk BECKER

IPC: H01L31/167 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/0687 ,  H02J50/30

CPC classification number: H01L31/167 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/0687 ,  H02J50/30

Abstract: An optoelectronic device is specified, including an emitter, operated with an electrical input voltage and configured to emit electromagnetic radiation during operation, a receiver, configured to convert electromagnetic radiation emitted by the emitter to an output voltage, wherein the receiver includes a semiconductor layer sequence with a plurality of stacked active layers, electromagnetic radiation emitted by the emitter is coupled into the receiver via a first side face of the semiconductor layer sequence, and the electromagnetic radiation propagates parallel to a main extension plane of the active layer inside the active layer, where it is gradually absorbed and converted into an electrical voltage.

公开(公告)号：US20240162681A1

公开(公告)日：2024-05-16

申请号：US18552795

申请日：2022-03-02

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Bruno JENTZSCH ,  Alvaro GOMEZ-IGLESIAS

IPC: H01S5/042 ,  H01S5/026 ,  H01S5/028 ,  H01S5/10 ,  H01S5/187 ,  H01S5/343

CPC classification number: H01S5/04256 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1085 ,  H01S5/187 ,  H01S5/34333

Abstract: In at least one embodiment, the optoelectronic semiconductor chip including a semiconductor layer sequence, in which there is at least one active zone for generating radiation; and a first electrode and a second electrode, with which the semiconductor layer sequence is in electrical contact; wherein the semiconductor layer sequence has, in the region of the active zone, at least one obliquely extending facet designed for a beam deflection of the radiation; wherein the first electrode and the second electrode are on the same mounting side of the semiconductor layer sequence as the at least one obliquely extending facet, and the mounting side is a main side of the semiconductor layer sequence; and wherein the radiation is coupled out on an emission side of the semiconductor layer sequence opposite from the mounting side.

公开(公告)号：US20240266802A1

公开(公告)日：2024-08-08

申请号：US18563177

申请日：2022-05-18

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Adrian Stefan AVRAMESCU ,  Laura KREINER ,  Bruno JENTZSCH ,  Alvaro GOMEZ-IGLESIAS

IPC: H01S5/11 ,  H01S5/185 ,  H01S5/34 ,  H01S5/343

CPC classification number: H01S5/11 ,  H01S5/185 ,  H01S5/3416 ,  H01S5/343

Abstract: An optoelectronic component includes a stacked arrangement including a photonic crystal and a gain medium. The gain medium includes a layer sequence composed of two quantum wells and at least one tunnel diode and is set up to emit an electromagnetic wave. The photonic crystal is electromagnetically coupled to the gain medium. The stacked arrangement is disposed on a substrate. Alternatively or additionally, the gain medium includes at least one quantum well. The photonic crystal is structured in a dielectric layer and electromagnetically coupled to the gain medium.

公开(公告)号：US20240396439A1

公开(公告)日：2024-11-28

申请号：US18693365

申请日：2022-09-13

Applicant: ams-OSRAM International GmbH

Inventor： Alvaro GOMEZ-IGLESIAS ,  Horst VARGA

IPC: H02M3/00 ,  H01F27/24 ,  H01F27/28 ,  H02M3/335

Abstract: A converter device has a primary coil, a secondary coil and a first semiconductor layer. The primary coil and the secondary coil are each flat, each has at least one winding and each is coaxially arranged. The primary coil is arranged on a bottom face of the first semiconductor layer and the secondary coil is arranged on a top face of the first semi-conductor layer.

公开(公告)号：US20250132607A1

公开(公告)日：2025-04-24

申请号：US18694514

申请日：2022-08-17

Applicant: ams-OSRAM International GmbH

Inventor： Dirk BECKER ,  Norwin von Malm ,  Tim BOESCKE ,  Alvaro GOMEZ-IGLESIAS ,  Martin HETZL ,  Horst VARGA ,  Tansen VARGHESE

IPC: H02J50/30 ,  H02J50/40 ,  H10F55/255 ,  H10F77/40

Abstract: The invention relates to an optoelectronic device including a transmitter designed to emit electromagnetic radiation and to be operated with an input voltage, and a receiver designed to receive the electromagnetic radiation and to provide an output voltage, the transmitter including at least one surface emitter, and the receiver comprising at least one photodiode.

公开(公告)号：US20240421558A1

公开(公告)日：2024-12-19

申请号：US18699604

申请日：2022-09-01

Applicant: ams-OSRAM International GmbH

Inventor： Tansen VARGHESE ,  Alvaro GOMEZ-IGLESIAS ,  Martin HETZL

IPC: H01S5/026 ,  H01S5/02315

Abstract: An optoelectronic device is specified including emitters, each emitter configured to emit electromagnetic radiation, and an assigned receiver for each emitter, configured to receive at least part of the electromagnetic radiation emitted by the emitter, wherein the emitters are configured to be operated with an input voltage, each receiver is configured to provide at least part of an output voltage, each emitter is physically connected to the assigned receiver.

公开(公告)号：US20230208110A1

公开(公告)日：2023-06-29

申请号：US17919843

申请日：2021-04-21

Applicant: ams-OSRAM International GmbH

Inventor： Peter FUCHS ,  Bruno JENTZSCH ,  Hubert HALBRITTER ,  Martin Rudolf BEHRINGER ,  Alvaro GOMEZ-IGLESIAS ,  Christian LAUER ,  Dean Maximilian SCHOKE ,  Tomasz SWIETLIK

IPC: H01S5/40 ,  G01S17/88 ,  H01S5/30

CPC classification number: H01S5/4043 ,  G01S17/88 ,  H01S5/3095

Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength λ0 of the laser to λ0+Δλ from a value R0, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.