摘要:
A supply circuit includes a rectifying bridge arranged in series between two high voltage capacitors. An AC line provides an intermediate voltage to a low voltage capacitor through the two high voltage capacitors. A plurality of resistors mounted in series with the two high voltage capacitors. A voltage clamping device limits the intermediate voltage at the low voltage capacitor and a linear series regulator provides an output DC voltage.
摘要:
A switching converter circuit includes bipolar devices in a Darlington configuration as a main switching element. Current drive is provided to the first base terminal to turn on the Darlington bipolar device. Base relaxation circuits to both the first and inner base terminals turn off the Darlington bipolar device.
摘要:
A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects to the base of the second high voltage bipolar transistor (inner base), and the emitter of the second high voltage bipolar transistor serves as the emitter terminal. A diode has its anode connected to the inner base (emitter of the first high voltage bipolar transistor, or base of the second high voltage bipolar transistor), and its cathode connected to the base terminal. Similarly, a three terminal hybrid MOSFET/bipolar high voltage switching device can be formed by replacing the first high voltage bipolar transistor of the previous switching device by a high voltage MOSFET.
摘要:
A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects to the base of the second high voltage bipolar transistor (inner base), and the emitter of the second high voltage bipolar transistor serves as the emitter terminal. A diode has its anode connected to the inner base (emitter of the first high voltage bipolar transistor, or base of the second high voltage bipolar transistor), and its cathode connected to the base terminal. Similarly, a three terminal hybrid MOSFET/bipolar high voltage switching device can be formed by replacing the first high voltage bipolar transistor of the previous switching device by a high voltage MOSFET.
摘要:
A position sensor includes a first part having several electrically conductive elements, a second part having an electrical conductor, and holding device holding the first part and the second part together with the conductive elements and the conductor being spaced apart and permitting relative movement between the conductive elements and the conductor. Included is a signal generator for generating and supplying different electrical signals to one of the first part and the second part for reception in a contactless manner by the other of the first part and the second part with a magnitude that is dependent upon the relative position between the conductive elements and the conductor. There is also a signal detector connected to the other of the first part and the second part for differentiating the electrical signals received thereby to determine the relative position between the conductive elements and the conductor.
摘要:
A position sensor comprises a first part having several electrically conductive elements, a second part having an electrical conductor, and holding means holding the first part and the second part together with the conductive elements and the conductor being spaced apart and permitting relative movement between the conductive elements and the conductor. Included is a signal generator for generating and supplying different electrical signals to one of the first part and the second part for reception in a contactless manner by the other of the first part and the second part with a magnitude that is dependent upon the relative position between the conductive elements and the conductor. There is also a signal detector connected to the other of the first part and the second part for differentiating the electrical signals received thereby to determine the relative position between the conductive elements and the conductor.
摘要:
A three terminal high voltage Darlington bipolar transistor power switching device includes two high voltage bipolar transistors, with collectors connected together serving as the collector terminal. The base of the first high voltage bipolar transistor serves as the base terminal. The emitter of the first high voltage bipolar transistor connects to the base of the second high voltage bipolar transistor (inner base), and the emitter of the second high voltage bipolar transistor serves as the emitter terminal. A diode has its anode connected to the inner base (emitter of the first high voltage bipolar transistor, or base of the second high voltage bipolar transistor), and its cathode connected to the base terminal. Similarly, a three terminal hybrid MOSFET/bipolar high voltage switching device can be formed by replacing the first high voltage bipolar transistor of the previous switching device by a high voltage MOSFET.
摘要:
A switching converter IC without a built-in power switching device includes a first terminal serving as a power supply positive connection, a second terminal serving as a power supply return connection, a third terminal serving as the switch-driving connection for controlling the switching duty of an external bipolar or MOSFET power switching device and also serving as a conduit for detection of current drawn by the power switching device to thereby provide overcurrent protection. Feedback information is derived from voltage between the first and the second terminals.