公开(公告)号：US09105757B2

公开(公告)日：2015-08-11

申请号：US14040670

申请日：2013-09-28

Applicant: Chih-Fang Huang ,  Tsung-Yi Huang ,  Chien-Wei Chiu ,  Tsung-Yu Yang ,  Ting-Fu Chang ,  Tsung-Chieh Hsiao ,  Ya-Hsien Liu ,  Po-Chin Peng

Inventor： Chih-Fang Huang ,  Tsung-Yi Huang ,  Chien-Wei Chiu ,  Tsung-Yu Yang ,  Ting-Fu Chang ,  Tsung-Chieh Hsiao ,  Ya-Hsien Liu ,  Po-Chin Peng

IPC: H01L29/872 ,  H01L29/66 ,  H01L29/868 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66212

Abstract: The present invention discloses a junction barrier Schottky (JBS) diode and a manufacturing method thereof. The JBS diode includes: an N-type gallium nitride (GaN) substrate; an aluminum gallium nitride (AlGaN) barrier layer, which is formed on the N-type GaN substrate; a P-type gallium nitride (GaN) layer, which is formed on or above the N-type GaN substrate; an anode conductive layer, which is formed at least partially on the AlGaN barrier layer, wherein a Schottky contact is formed between part of the anode conductive layer and the AlGaN barrier layer; and a cathode conductive layer, which is formed on the N-type GaN substrate, wherein an ohmic contact is formed between the cathode conductive layer and the N-type GaN substrate, and the cathode conductive layer is not directly connected to the anode conductive layer.

Abstract translation: 本发明公开了一种接合势垒肖特基（JBS）二极管及其制造方法。 JBS二极管包括：N型氮化镓（GaN）衬底; 形成在N型GaN衬底上的氮化镓铝（AlGaN）阻挡层; 在N型GaN衬底上形成的P型氮化镓（GaN）层; 至少部分地形成在AlGaN阻挡层上的阳极导电层，其中在所述阳极导电层的一部分和所述AlGaN阻挡层之间形成肖特基接触; 以及阴极导电层，其形成在N型GaN衬底上，其中在阴极导电层和N型GaN衬底之间形成欧姆接触，并且阴极导电层不直接连接到阳极导电层 。

公开(公告)号：US08710815B2

公开(公告)日：2014-04-29

申请号：US13160308

申请日：2011-06-14

Applicant: Chieh-Min Feng ,  Ting-Hung Wang ,  Chung-Sheng Cheng ,  Jian-Rong Huang

Inventor： Chieh-Min Feng ,  Ting-Hung Wang ,  Chung-Sheng Cheng ,  Jian-Rong Huang

IPC: G05F1/575

CPC classification number: H02M3/156 ,  H02M2001/0032 ,  Y02B70/16

Abstract: The present invention discloses a voltage regulator, and a control circuit and a control method therefor. The method for controlling a voltage regulator comprises: receiving a dynamic voltage identification signal which instructs the voltage regulator to change its output voltage to a target voltage, and generating a compensation signal to shorten an interval for the output voltage of the voltage regulator to reach the target voltage.

Abstract translation: 本发明公开了一种电压调节器及其控制电路及其控制方法。 用于控制电压调节器的方法包括：接收动态电压识别信号，其指示电压调节器将其输出电压改变到目标电压，并产生补偿信号以缩短电压调节器的输出电压的间隔以达到 目标电压。

公开(公告)号：US08686504B2

公开(公告)日：2014-04-01

申请号：US13555163

申请日：2012-07-22

Applicant: Tsung-Yi Huang ,  Chien-Hao Huang

Inventor： Tsung-Yi Huang ,  Chien-Hao Huang

IPC: H01L29/66

CPC classification number: H01L29/78 ,  H01L21/823412 ,  H01L21/823418 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/66689 ,  H01L29/7816

Abstract: The present invention discloses a double diffused drain metal oxide semiconductor (DDDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes a first well, a gate, a diffusion region, a source, and a drain. A low voltage device is also formed in the substrate, which includes a second well and a lightly doped drain (LDD) region, wherein the first well and the diffusion region are formed by process steps which also form the second well and the LDD region in the low voltage device, respectively.

公开(公告)号：US20130181683A1

公开(公告)日：2013-07-18

申请号：US13351917

申请日：2012-01-17

Applicant: Hsuan-Kai Wang ,  Nien-Hui Kung ,  Chieh-Wei Chen

Inventor： Hsuan-Kai Wang ,  Nien-Hui Kung ,  Chieh-Wei Chen

IPC: H02J7/00 ,  H03K3/011

CPC classification number: H02J7/047 ,  H03K3/011

Abstract: The present invention discloses a battery charging circuit adjusting a charging voltage or a charging current according to a battery temperature, which includes: a power stage circuit including at least one power transistor switch and converting input power to charging power by operating the power transistor switch within a temperature range, wherein the charging power includes the charging voltage and the charging current; a reference signal generator obtaining signals representing the battery temperature and generating a reference signal accordingly; and a control circuit generating a switch signal according to the reference signal for operating the power transistor of the power stage circuit, wherein the charging voltage or the charging current is gradually increased as the battery temperature increases in a lower range within the temperature range or gradually decreased as the battery temperature increases in a higher range within the temperature range.

Abstract translation: 本发明公开了一种根据电池温度调节充电电压或充电电流的电池充电电路，其包括：功率级电路，其包括至少一个功率晶体管开关，并通过在其内部操作功率晶体管开关将输入功率转换为充电功率 温度范围，其中充电功率包括充电电压和充电电流; 参考信号发生器获得表示电池温度的信号并相应地产生参考信号; 以及控制电路，根据用于操作功率级电路的功率晶体管的参考信号产生开关信号，其中充电电压或充电电流随着电池温度在温度范围内逐渐升高或逐渐升高 随着电池温度在温度范围内的更高范围内增加而降低。

公开(公告)号：US20130045577A1

公开(公告)日：2013-02-21

申请号：US13317568

申请日：2011-10-21

Applicant: Tsung-Yi Huang ,  Yuh-Chyuan Wang

Inventor： Tsung-Yi Huang ,  Yuh-Chyuan Wang

IPC: H01L21/8238

CPC classification number: H01L29/66659 ,  H01L21/266 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/0922 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/7835

Abstract: The present invention discloses a manufacturing method of a high voltage device. The high voltage device is formed in a first conductive type substrate. The high-voltage device includes: a second conductive type buried layer; a first conductive type high voltage well; and a second conductive type body. The high voltage well is formed by the same step for forming a first conductive type well or a first conductive type channel stop layer of a low voltage device formed in the same substrate. The body is formed by the same step for forming a second conductive type well of the low voltage device.

Abstract translation: 本发明公开了一种高压装置的制造方法。 高压器件形成在第一导电型衬底中。 高电压装置包括：第二导电型掩埋层; 第一导电型高压井; 和第二导电型体。 通过与形成在同一衬底中的低电压器件的第一导电型阱或第一导电型沟道阻挡层相同的步骤形成高电压阱。 主体由用于形成低压装置的第二导电型阱的相同步骤形成。

公开(公告)号：US20130032880A1

公开(公告)日：2013-02-07

申请号：US13197370

申请日：2011-08-03

Applicant: Tsung-Yi HUANG ,  Huan-Ping CHU

Inventor： Tsung-Yi HUANG ,  Huan-Ping CHU

IPC: H01L29/78 ,  H01L21/336

CPC classification number: H01L29/0878 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7835

Abstract: The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate, wherein the substrate has an upper surface. The high voltage device includes: a second conductive type buried layer, which is formed in the substrate; a first conductive type well, which is formed between the upper surface and the buried layer; and a second conductive type well, which is connected to the first conductive type well and located at different horizontal positions. The second conductive type well includes a well lower surface, which has a first part and a second part, wherein the first part is directly above the buried layer and electrically coupled to the buried layer; and the second part is not located above the buried layer and forms a PN junction with the substrate.

Abstract translation: 本发明公开了一种高压器件及其制造方法。 高压器件形成在第一导电型衬底中，其中衬底具有上表面。 高压器件包括：形成在衬底中的第二导电型掩埋层; 第一导电型阱，其形成在上表面和埋层之间; 以及第二导电型阱，其连接到第一导电类型阱并且位于不同的水平位置。 第二导电类型阱包括井下表面，其具有第一部分和第二部分，其中第一部分直接在掩埋层的上方并电耦合到掩埋层; 并且第二部分不位于掩埋层的上方并与衬底形成PN结。

公开(公告)号：US20130015822A1

公开(公告)日：2013-01-17

申请号：US13181203

申请日：2011-07-12

Applicant: Nien-Hui Kung

Inventor： Nien-Hui Kung

IPC: H02J7/04 ,  H02J7/06

CPC classification number: H02J7/045 ,  H02J7/06 ,  H02J7/34

Abstract: The present invention discloses a multi-purpose power management apparatus, a power path control circuit, and a control method therefor. The multi-purpose power management apparatus controls power conversion between an input power and an output power and charging operation from the output power to a battery. The multi-purpose power management apparatus includes: a switch circuit including at least one power transistor; a switch control circuit generating a PWM signal to control the power transistor, for controlling the power conversion between the input power and the output power; a charging management circuit for controlling the charging operation from the output power to the battery; and a path selection circuit for determining whether the charging operation is controlled by the charging management circuit.

Abstract translation: 本发明公开了一种多用途电力管理装置，电力路径控制电路及其控制方法。 多用途电力管理装置控制输入电力和输出电力之间的电力转换以及从输出电力到电池的充电操作。 多用途电力管理装置包括：开关电路，包括至少一个功率晶体管; 产生PWM信号以控制功率晶体管的开关控制电路，用于控制输入功率和输出功率之间的功率转换; 充电管理电路，用于控制从所述输出电力到所述电池的充电操作; 以及路径选择电路，用于确定充电操作是否由充电管理电路控制。

公开(公告)号：US20120319662A1

公开(公告)日：2012-12-20

申请号：US13162519

申请日：2011-06-16

Applicant: Nien-Hui Kung

Inventor： Nien-Hui Kung

IPC: G05F1/10

CPC classification number: H02M3/1588 ,  H02M2001/0032 ,  H02M2001/0054 ,  Y02B70/1466 ,  Y02B70/1491 ,  Y02B70/16

Abstract: The present invention discloses a switching regulator, a control circuit and a control method therefor. The switching regulator comprises an upper gate switch, a lower gate switch, and an inductor connected to a switching node. When a current passing through the upper gate switch or the inductor is lower than a threshold, the lower gate switch is kept OFF until a next cycle, and during the cycle wherein the lower gate switch is OFF, the upper gate switch is turned ON for a period of time.

Abstract translation: 本发明公开了一种开关调节器，控制电路及其控制方法。 开关调节器包括上栅极开关，下栅极开关和连接到开关节点的电感器。 当通过上部栅极开关或电感器的电流低于阈值时，下部栅极开关保持截止直到下一个周期，并且在下部栅极开关截止的周期中，上部栅极开关导通， 一段时间。

公开(公告)号：US08319444B2

公开(公告)日：2012-11-27

申请号：US12787599

申请日：2010-05-26

Applicant: Chiawei Liao ,  Jing-Meng Liu ,  Leng-Nien Hsiu

Inventor： Chiawei Liao ,  Jing-Meng Liu ,  Leng-Nien Hsiu

IPC: H05B37/00

CPC classification number: H05B33/0818 ,  Y02B20/346

Abstract: The present invention discloses a tail-less LED control circuit, which includes: a power supply stage having an output terminal which provides electrical power to an LED circuit; an output capacitor coupled to the output terminal; an LED driver circuit coupled to the power supply stage for controlling the power supply stage to provide the electrical power to the LED circuit, the LED driver circuit receiving a PWM dimming signal for adjusting brightness of the LED circuit; and a MOSFET switch coupled to the output capacitor in series, the MOSFET switch switching synchronously with the PWM dimming signal to alleviate LED afterglow, wherein the MOSFET switch includes a body diode having an anode-cathode direction against the discharge direction of the output capacitor.

Abstract translation: 本发明公开了一种无尾LED控制电路，其包括：具有向LED电路提供电力的输出端子的电源级; 耦合到所述输出端子的输出电容器; LED驱动器电路，其耦合到所述电源级，用于控制所述电源级以向所述LED电路提供电力，所述LED驱动器电路接收用于调节所述LED电路的亮度的PWM调光信号; 以及耦合到串联的输出电容器的MOSFET开关，MOSFET开关与PWM调光信号同步地切换以减轻LED余辉，其中MOSFET开关包括具有抵抗输出电容器的放电方向的阳极 - 阴极方向的体二极管。

公开(公告)号：US20120274299A1

公开(公告)日：2012-11-01

申请号：US13544542

申请日：2012-07-09

Applicant: Kuang-Fu Chang ,  Yu-Chang Chen

Inventor： Kuang-Fu Chang ,  Yu-Chang Chen

IPC: G05F1/10

CPC classification number: H02M1/36 ,  H02M1/32 ,  H02M3/156 ,  H02M3/33507

Abstract: The present invention discloses a switching regulator, including: a power stage including at least one power transistor which switches according to a switch control signal to convert an input voltage to an output voltage; a pulse width modulation (PWM) signal generator generating a PWM signal according to the output voltage; an over current detection circuit comparing a current sensing signal with a reference signal to generate an over current signal indicating whether an over current is occurring; and a signal adjustment circuit adjusting the PWM signal or a clock signal to generate the switch control signal for controlling an ON time of the power transistor of the power stage.

Abstract translation: 本发明公开了一种开关调节器，包括：功率级，包括至少一个功率晶体管，其根据开关控制信号切换以将输入电压转换为输出电压; 脉宽调制（PWM）信号发生器，根据输出电压产生PWM信号; 过电流检测电路，其将电流感测信号与参考信号进行比较，以产生指示是否发生过电流的过电流信号; 以及信号调整电路，调整PWM信号或时钟信号，以产生用于控制功率级的功率晶体管的接通时间的开关控制信号。