公开(公告)号：US07884810B2

公开(公告)日：2011-02-08

申请号：US11396951

申请日：2006-04-03

Applicant: Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Seung-Hyun Park

Inventor： Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Seung-Hyun Park

IPC: G06F3/045

CPC classification number: G06K9/0002

Abstract: Unevenness detecting apparatus for compensating for threshold voltage and method thereof is provided with a plurality of scan lines and a plurality of data lines and a pixel circuit arranged in each point which the scan lines and the data lines are intersected. The unevenness detecting apparatus for compensating for the threshold voltage and method thereof may accurately sense a state of minute unevenness such as fingerprints by using an active element (e.g., TFT) as an element of which pixel circuit is composed.

Abstract translation: 用于补偿阈值电压的不均匀性检测装置及其方法具有多条扫描线和多条数据线以及排列在扫描线和数据线相交的各点的像素电路。 用于补偿阈值电压的不均匀性检测装置及其方法可以通过使用有源元件（例如TFT）作为构成像素电路的元件来精确地感测诸如指纹的微小不均匀的状态。

公开(公告)号：US07442588B2

公开(公告)日：2008-10-28

申请号：US11830010

申请日：2007-07-30

Applicant: Jin Jang ,  Se-Hwan Kim ,  Youn-Duck Nam ,  Eung-Bum Kim ,  Ji-Ho Hur

Inventor： Jin Jang ,  Se-Hwan Kim ,  Youn-Duck Nam ,  Eung-Bum Kim ,  Ji-Ho Hur

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes.The method comprises the steps of forming a gate electrode on a substrate and forming a gate insulating layer thereon, forming a transparent metal oxide layer on the gate insulating layer, forming an oxidation barrier layer on the transparent metal oxide layer in such a manner that a portion of the transparent metal oxide layer positioned over the gate electrode is exposed, and locally oxidizing only the exposed portion of the transparent metal oxide layer to convert the exposed portion into a semiconductor layer.

Abstract translation: 公开了一种制造薄膜晶体管的方法。 具体地，该方法使用局部氧化，其中透明金属氧化物层的一部分被局部氧化以转化为半导体层，使得透明金属氧化物层的氧化部分可以用作沟道区域，并且所述非氧化部分 透明金属氧化物层可以用作源极和漏极。 该方法包括以下步骤：在衬底上形成栅电极并在其上形成栅极绝缘层，在栅绝缘层上形成透明金属氧化物层，在透明金属氧化物层上形成氧化阻挡层， 露出位于栅电极上方的透明金属氧化物层的部分，仅局部氧化透明金属氧化物层的露出部分，将露出部分转换为半导体层。

公开(公告)号：US07688370B2

公开(公告)日：2010-03-30

申请号：US11295373

申请日：2005-12-06

Applicant: Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

Inventor： Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

IPC: H04N3/14

CPC classification number: H04N5/37452 ,  H04N5/3559

Abstract: Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.

Abstract translation: 公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸 在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。 具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

公开(公告)号：US07944415B2

公开(公告)日：2011-05-17

申请号：US11396925

申请日：2006-04-03

Applicant: Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

Inventor： Jin Jang ,  Ji-Ho Hur ,  Se-Hwan Kim ,  Youn-Duck Nam

IPC: G09G3/30

CPC classification number: G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0262 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2360/145 ,  G09G2360/148

Abstract: Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.

Abstract translation: 公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。 由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。 因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。 此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。

公开(公告)号：US07618852B2

公开(公告)日：2009-11-17

申请号：US10533998

申请日：2003-11-06

Applicant: Jin Jang ,  Jonghyun Choi ,  Do-Young Kim ,  Byoung-Kwon Choo

Inventor： Jin Jang ,  Jonghyun Choi ,  Do-Young Kim ,  Byoung-Kwon Choo

IPC: H01L21/20

CPC classification number: H01L21/02667 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/268

Abstract: The present invention provides a phase transition method of an amorphous material, comprising steps of: depositing the amorphous material on a dielectric substrate; forming a cap layer on the amorphous material; depositing a metal on the cap layer; and crystallizing the amorphous material. According to the present invention, the surface of the amorphous material is protected by the cap layer, so that clean surface can be obtained and the roughness of the surface can be remarkably reduced during thermal process and sample handling. In addition, the cap layer is disposed between the amorphous material and the metal to diffuse the metal, so that the metal contamination due to the direct contact of the metal and the amorphous material in the conventional method can be remarkably reduced.

Abstract translation: 本发明提供一种非晶材料的相变方法，包括以下步骤：将非晶材料沉积在电介质基片上; 在所述非晶材料上形成盖层; 在所述盖层上沉积金属; 并使非晶材料结晶。 根据本发明，无定形材料的表面被盖层保护，从而可以获得清洁的表面，并且在热处理和样品处理期间可以显着降低表面的粗糙度。 此外，盖层设置在非晶材料和金属之间以使金属扩散，从而可以显着降低由于金属和非晶材料在常规方法中的直接接触引起的金属污染。

公开(公告)号：US20060119718A1

公开(公告)日：2006-06-08

申请号：US11295373

申请日：2005-12-06

Applicant: Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

Inventor： Ji-Ho Hur ,  Se-Hwan Kim ,  Jin Jang

IPC: H04N5/335

CPC classification number: H04N5/37452 ,  H04N5/3559

Abstract: Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.

Abstract translation: 公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸 在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。 具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

公开(公告)号：US07876296B2

公开(公告)日：2011-01-25

申请号：US11396932

申请日：2006-04-03

Applicant: Jin Jang ,  Jae-Won Choi

Inventor： Jin Jang ,  Jae-Won Choi

IPC: G09G3/32

CPC classification number: G09G3/3233 ,  G09G3/3291 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/0233 ,  G09G2320/043

Abstract: Disclosed are driving circuit and method which are used in an Organic Light Emitting Diode (OLED), and more specifically to a driving circuit of an organic light emitting diode and a driving method thereof which use a thin film transistor (TFT) as an active device. The driving circuit and method can uniformly produce luminance of the light emitting element because the driving current is produced by compensating the unevenness of threshold voltage of the active device. Further, the variance of the threshold voltage Vth due to deterioration of the transistor produced according as the driving circuit of the OLED is utilized for a long time is also compensated, thereby increasing life of the display device which applies the driving circuit of the OLED.

Abstract translation: 公开了用于有机发光二极管（OLED）的驱动电路和方法，更具体地说，涉及使用薄膜晶体管（TFT）作为有源器件的有机发光二极管的驱动电路及其驱动方法 。 驱动电路和方法可以均匀地产生发光元件的亮度，因为通过补偿有源器件的阈值电压的不均匀性来产生驱动电流。 此外，由于OLED的驱动电路产生的晶体管的劣化导致的阈值电压Vth的变化长时间被利用也得到补偿，从而延长了施加OLED的驱动电路的显示装置的寿命。