公开(公告)号：US5363392A

公开(公告)日：1994-11-08

申请号：US978234

申请日：1992-11-18

Applicant: Akihiko Kasukawa ,  Toshio Kikuta

Inventor： Akihiko Kasukawa ,  Toshio Kikuta

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/34 ,  H01S5/0211 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/343

Abstract: A strained quantum well type semiconductor laser device is disclosed to comprise a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized in that tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively.

Abstract translation: 公开了一种应变量子阱型半导体激光器件，其包括形成在半导体衬底上的量子阱有源层的多个层，其特征在于，拉伸应变量子阱层和压缩应变势垒层交替堆叠以形成所述量子阱活性层 并且当半导体衬底分别由InP，InGaP或GaAs制成时，量子阱层由InGaAs或InGaAsP和InP制成。

公开(公告)号：US5334294A

公开(公告)日：1994-08-02

申请号：US923800

申请日：1992-09-04

Applicant: Hirohisa Iwai ,  Kaisuke Shiroyama ,  Akira Matsuda ,  Takeo Nakamura ,  Ryotomo Shirakawa

Inventor： Hirohisa Iwai ,  Kaisuke Shiroyama ,  Akira Matsuda ,  Takeo Nakamura ,  Ryotomo Shirakawa

IPC: A61M25/09 ,  B23H3/00 ,  B23H9/00 ,  B23H9/18 ,  C25F3/02 ,  C25F3/12 ,  C25F3/14 ,  C25F7/00

CPC classification number: B23H9/18 ,  B23H9/005 ,  A61M25/09

Abstract: The present invention relates to a processing method of wire material and a processing device therefor at the times of intending to make the tip of wire materials such as guide wire for catheter thin and flexible by tapering.When the wire material passes through the electrolytic tub, the wire speed is made constant and the current value is controlled, or the current value is made constant and the wire speed is controlled to give the processings such as tapering. For the electrolytic polishing bath, it is desirable to use a mixed bath comprising trivalent alcohol, perchloric acid and monovalent alcohol.The inventive method exerts an effect that the tapering can be given efficiently and yet with high precision compared with the traditional method of mechanical polishing or the method of dipping one by one batchwise into the electrolytic polishing bath.

Abstract translation: PCT No.PCT / JP91 / 00027 Sec。 371日期：1992年9月4日 102（e）日期1992年9月4日PCT 1991年1月16日PCT PCT。 第WO92 / 12819号公报 日期：1992年8月6日。本发明涉及一种线材加工方法及其处理装置，其目的在于使导线材料的尖端如导管的导丝通过锥形变薄和柔性。 当导线材料通过电解槽时，使线速度恒定并且控制电流值，或者使电流值恒定并且控制线速度以给出诸如锥形的处理。 对于电解抛光浴，需要使用包含三价醇，高氯酸和一价醇的混合浴。 与传统的机械抛光方法相比，本发明的方法发挥了一种效果，与传统的机械抛光方法相比，可以有效地高精度地提供锥形化，或者将其逐个浸入电解抛光浴中。