公开(公告)号：US5379717A

公开(公告)日：1995-01-10

申请号：US63344

申请日：1993-05-18

Applicant: Seikoh Yoshida ,  Shoichi Ozawa ,  Toshio Kikuta

Inventor： Seikoh Yoshida ,  Shoichi Ozawa ,  Toshio Kikuta

IPC: C30B15/00 ,  C30B15/22 ,  C30B15/28

CPC classification number: C30B29/40 ,  C30B15/22 ,  C30B29/48 ,  Y10T117/1004 ,  Y10T117/1032

Abstract: A method of growing a single semiconductor crystal with a flat top. In order to grow a single flat top crystal, the InP crystal is pulled up after the temperature drop of the melt has almost stopped, at a point in time when a meniscus at the interface of solid-liquid can be seen over the whole circumference of the surface of the melt. This prevents a facet from appearing at the shoulder portion of the crystal, thus reducing the generation of twin crystals and drastically improves retension of single crystal formation.

Abstract translation: 一种生长具有平坦顶部的单个半导体晶体的方法。 为了生长单个平顶晶体，在熔体的温度下降几乎停止之后InP晶体被拉起，在可以在整个圆周上看到固液界面处的弯液面的时间点 熔体的表面。 这防止了小面出现在晶体的肩部，从而减少了双晶的产生并且显着改善了单晶形成的延展。

公开(公告)号：US5325385A

公开(公告)日：1994-06-28

申请号：US991944

申请日：1992-12-17

Applicant: Akihiko Kasukawa ,  Toshio Kikuta

Inventor： Akihiko Kasukawa ,  Toshio Kikuta

IPC: H01S5/00 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC classification number: H01S5/227 ,  H01S5/2275 ,  H01S5/32391

Abstract: This invention provides a buried-type semiconductor laser device that operates stably and reliably at a high temperature for a prolonged period of time. A buried-type semiconductor laser device according to the invention comprises a semiconductor substrate 2, a first ridge mesa 8 formed on said substrate 2, said first ridge mesa 8 being covered on the top with at least an active layer 4 and provided at both lateral edges with current blocking layers 9, 10 of p-n reverse junction semiconductors arranged along the active layer for confining electric currents, and a second ridge mesa 11 formed by said first ridge mesa 8 and said current blocking layers 9, 10 and provided at both lateral edges with a semi-insulating layer 13.

Abstract translation: 本发明提供一种在高温下长时间稳定可靠地工作的掩埋式半导体激光器件。 根据本发明的掩埋型半导体激光器件包括半导体衬底2，形成在所述衬底2上的第一脊台面8，所述第一脊台面8在顶部至少被覆盖有活性层4并且设置在两个侧面 具有沿有源层布置以限制电流的pn反向结半导体的电流阻挡层9,10的边缘以及由所述第一脊台面8和所述电流阻挡层9,10形成的第二脊台面11，并且设置在两个侧边缘处 具有半绝缘层13。

公开(公告)号：US5390208A

公开(公告)日：1995-02-14

申请号：US165298

申请日：1993-12-13

Applicant: Akihiko Kasukawa ,  Toshio Kikuta

Inventor： Akihiko Kasukawa ,  Toshio Kikuta

IPC: H01S5/00 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18

CPC classification number: B82Y20/00 ,  H01S5/3434 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/3407 ,  H01S5/34306

Abstract: There is provided a strained quantum well layer semiconductor laser device that shows an improved temperature dependency of the threshold current and a high frequency performance while maintaining an excellent low threshold current operability. A strained quantum well layer type semiconductor laser device according to the invention comprises a light emitting active layer 14 of a multilayer structure including a quantum well layer 14a and a barrier layer 14c and a pair of light confining layers 13, 15, respectively laid on and under the active layer, the quantum well layer being made of InAs.sub.y P.sub.1-y (0

Abstract translation: 提供了一种应变量子阱层半导体激光器件，其显示了在保持优异的低阈值电流可操作性的同时，改善了阈值电流的温度依赖性和高频性能。 根据本发明的应变量子阱层型半导体激光器件包括多层结构的发光有源层14，其包括量子阱层14a和阻挡层14c以及一对光限制层13,15， 在有源层下，量子阱层由InAsyP1-y（0

公开(公告)号：US5363392A

公开(公告)日：1994-11-08

申请号：US978234

申请日：1992-11-18

Applicant: Akihiko Kasukawa ,  Toshio Kikuta

Inventor： Akihiko Kasukawa ,  Toshio Kikuta

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC classification number: B82Y20/00 ,  H01S5/34 ,  H01S5/0211 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/343

Abstract: A strained quantum well type semiconductor laser device is disclosed to comprise a plurality of layers including a quantum well active layer formed on a semiconductor substrate characterized in that tensile strained quantum well layers and compression strained barrier layers are stacked alternately to form said quantum well active layer and the quantum well layers are made of either InGaAs or InGaAsP and InP, when the semiconductor substrate is made of InP, InGaP or GaAs, respectively.

Abstract translation: 公开了一种应变量子阱型半导体激光器件，其包括形成在半导体衬底上的量子阱有源层的多个层，其特征在于，拉伸应变量子阱层和压缩应变势垒层交替堆叠以形成所述量子阱活性层 并且当半导体衬底分别由InP，InGaP或GaAs制成时，量子阱层由InGaAs或InGaAsP和InP制成。

公开(公告)号：US5342475A

公开(公告)日：1994-08-30

申请号：US893333

申请日：1992-06-03

Applicant: Seikoh Yoshida ,  Toshio Kikuta

Inventor： Seikoh Yoshida ,  Toshio Kikuta

IPC: C30B11/00 ,  C30B21/06

CPC classification number: C30B29/40 ,  C30B11/002 ,  C30B11/003 ,  C30B29/42 ,  C30B29/44

Abstract: Disclosed is a method of growing a single crystal of a compound semiconductor, in which a compound semiconductor material is loaded in a vertical crucible and the compound semiconductor material is converted into a single crystal by utilizing a seed disposed in the center of the bottom portion of the vertical crucible. The method has the steps of using a crucible having a substantially flat bottom as part of said vertical crucible, producing a melt by melting the compound semiconductor material causing the melt to have a temperature distribution that an isotherm of the melt is convex with a drift toward the melt side, rapidly lowering the temperature of that portion of the melt of the compound semiconductor material which neighbors the seed in the initial stage of the crystal growth to a supercooled state so as to permit a crystal growth from the seed in substantially the horizontal direction without allowing the crystal to grow in a vertical direction to form a crystal of a desired diameter, and solidifying the compound semiconductor material in a molten state while maintaining a temperature gradient that the temperature of the melt gradually uptilts from the lower portion toward the upper portion so as to obtain a single crystal of the compound semiconductor. The particular method permits efficiently growing a single crystal of a large diameter while suppressing a twin generation.

Abstract translation: 公开了一种生长化合物半导体的单晶的方法，其中将化合物半导体材料装载在垂直坩埚中，并且化合物半导体材料通过利用布置在底部的中心的晶种转化为单晶 立式坩埚。 该方法具有以下步骤：使用具有基本平坦的底部的坩埚作为所述垂直坩埚的一部分，通过熔化化合物半导体材料产生熔体，使熔体具有使熔体的等温线凸起的温度分布， 熔融侧，在晶体生长的初始阶段将种子附近的化合物半导体材料的熔体部分的温度迅速降低至过冷状态，以允许晶种在大致水平方向上生长 而不允许晶体在垂直方向上生长以形成所需直径的晶体，并且在熔融状态下固化化合物半导体材料，同时保持熔体的温度从下部朝向上部逐渐上升的温度梯度 以获得化合物半导体的单晶。 具体的方法允许有效地生长大直径的单晶，同时抑制双代。

公开(公告)号：US5388116A

公开(公告)日：1995-02-07

申请号：US125848

申请日：1993-09-24

Applicant: Michio Ohkubo ,  Toshio Kikuta

Inventor： Michio Ohkubo ,  Toshio Kikuta

IPC: H01S5/042 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC classification number: H01S5/16 ,  H01S5/0425 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/32308

Abstract: There is provided a semiconductor laser device that can be driven for a high-output power level without degradation in the quality of the device. It comprises a double heterostructure including an active layer (5, 25) and an electrode layer (9, 29) arranged on a semiconductor substrate (1, 21) having a current injection region extending through the electrode layer (9, 29) and the active layer (5, 25), a structural scheme being provided either in a region located above the active layer (5, 25) or in a region covering an resonator of the active layer (5, 25) in order to reduce the injection current level of the device. With such an arrangement, the energy output level of the semiconductor laser device is remarkably enhanced and its reliability is greatly improved, because it can be driven for a high-output power level without degradation in the quality of the device.

Abstract translation: 提供了可以驱动高输出功率电平而不降低器件质量的半导体激光器件。 它包括一个双异质结构，包括有源层（5,25）和布置在半导体衬底上的电极层（9,29），该半导体衬底具有延伸穿过电极层（9,29）的电流注入区域，并且 有源层（5,25），结构方案设置在位于有源层（5,25）上方的区域中或覆盖有源层（5,25）的谐振器的区域中，以便降低注入电流 设备级别。 通过这样的配置，可以显着提高半导体激光器件的能量输出电平，并且其可靠性大大提高，因为可以驱动高输出功率电平而不会降低器件的质量。

公开(公告)号：US4904336A

公开(公告)日：1990-02-27

申请号：US185476

申请日：1988-04-25

Applicant: Shoichi Ozawa ,  Katsumi Wagatsuma ,  Toshio Kikuta

Inventor： Shoichi Ozawa ,  Katsumi Wagatsuma ,  Toshio Kikuta

IPC: C30B11/00 ,  C30B11/06 ,  C30B29/66

CPC classification number: C30B11/06 ,  C30B11/00 ,  C30B11/003 ,  C30B29/42 ,  Y10S117/917 ,  Y10T117/1092

Abstract: An apparatus for manufacturing a single crystal of compound semiconductor consisting of Ga and As comprises a crucible storing Ga and having a seed crystal arranged at a lower end portion thereof a gas material susceptor, arranged below the crucible, for storing As, the gas material susceptor and the crucible being arranged in a growth susceptor to be capable of communicating with each other, a main heater for heating and melting Ga in the crucible and for cooling the melt Ga from a lower portion thereof to grow a single crystal, a sub heater for heating and evaporating As in the gas material susceptor and allowing the evaporated As to react with the melt Ga in the said crucible, and a magnetic field applying coil for applying a vertical magnetic field in the melt Ga and As in the crucible so that a surface of the melt in the crucible which is grown to a single crystal is lower in temperature at a central portion thereof than a peripheral portion thereof in a radial direction and at the same time projects upward.

Abstract translation: 用于制造由Ga和As组成的化合物半导体的单晶的装置包括：坩埚，其存储Ga并且具有布置在其下端的晶种的坩埚，其布置在坩埚下方，用于存储As，气体基座 并且坩埚布置在生长基座中以能够彼此连通，用于加热和熔化坩埚中的Ga的主加热器并且用于从其下部冷却熔融物Ga以生长单晶，用于 加热和蒸发与气体材料感受器一样，使蒸发的As与所述坩埚中的熔融物Ga反应，以及用于在坩埚中的熔融Ga和As中施加垂直磁场的磁场施加线圈，使得表面 在生长到单晶的坩埚中的熔体在其中心部分的温度比其周边部分在径向方向和th 同时向上推。

公开(公告)号：US4853066A

公开(公告)日：1989-08-01

申请号：US113546

申请日：1987-10-26

Applicant: Seikoh Yoshida ,  Toshio Kikuta ,  Yuzo Kashiwayanagi

Inventor： Seikoh Yoshida ,  Toshio Kikuta ,  Yuzo Kashiwayanagi

IPC: C30B11/00

CPC classification number: C30B11/003 ,  Y10S117/902

Abstract: A method and an apparatus for growing a crystal of a compound semiconductor, in which a heater, used to heat a boat for growing the semiconductor crystal, is disposed around an ampule containing the boat, and a melt of the compound semiconductor, which is prepared in the boat, is freezed gradually at a predetermined temperature gradient including the freezing point of the melt, from a crystal growth starting end of the boat to a crystal growth terminating end thereof, whereby a single crystal or a polycrystal is grown. At the start of crystal growth, a crystalline nucleus is formed by periodically changing the temperature of the crystal growth starting end of the boat, in descending and ascending modes, within a temperature range lower than the melting point of the compound semiconductor, after once lowering the temperature of the starting end to a level lower than the melting point by means of a heater block opposed to the starting end. The crystal is grown around the crystalline nucleus formed in this manner. Preferably, the temperature change at the crystal growth starting end is slower in the descendng mode than in the ascending mode. The method of the invention may be applied without regard to the use of a seed crystal.

Abstract translation: 一种用于生长化合物半导体的晶体的方法和装置，其中用于加热用于生长半导体晶体的船的加热器设置在包含船的安瓿的周围，以及准备的化合物半导体的熔体 在船上，以包括熔融物的凝固点在内的预定温度梯度从船的晶体生长起始端逐渐冷冻至其晶体生长终止端，从而生长单晶或多晶。 在晶体生长开始时，一旦下降，在低于化合物半导体的熔点的温度范围内，以升降模式周期性地改变船的晶体生长起始端的温度，形成结晶核 通过与起始端相对的加热器块将起始端的温度降至低于熔点的水平。 晶体生长在以这种方式形成的结晶核周围。 优选地，在下降模式下，晶体生长开始端的温度变化比在上升模式中更慢。 可以应用本发明的方法而不考虑使用晶种。