公开(公告)号：US11862938B2

公开(公告)日：2024-01-02

申请号：US16898612

申请日：2020-06-11

Applicant: VISUAL PHOTONICS EPITAXY CO., LTD.

Inventor： Chao-Hsing Huang ,  Yu-Chung Chin ,  Van-Truong Dai ,  Jhao-Hang He ,  Hung-Chi Hsiao

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/183 ,  H01S5/30 ,  H01S5/20

CPC classification number: H01S5/3407 ,  H01S5/18311 ,  H01S5/2004 ,  H01S5/3095 ,  H01S5/343 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/3434 ,  H01S5/34353 ,  H01S5/3436 ,  H01S5/34346 ,  H01S5/34373

Abstract: Provided is a semiconductor laser diode, including a GaAs/In P substrate and a multi-layer structure on the GaAs/InP substrate. The multi-layer structure includes a lower epitaxial region, an active region and an upper epitaxial region. The active region comprises a first active layer, an epitaxial region and a second active layer, the epitaxial region is disposed between the first active layer and the second active layer, the first active layer comprises one or more quantum well structures or one or more quantum dot structures, and the second active layer comprises one or more quantum well structures or one or more quantum dot structures. the epitaxial region further comprises a tunnel junction and at least one carrier confinement layer, at least one carrier confinement layer is disposed between the tunnel junction and the first active layer or between the tunnel junction and the second active layer such that the at least one carrier confinement layer blocks electrons or holes, and no electrons or holes are able to reach the tunnel junction.

公开(公告)号：US20180090911A1

公开(公告)日：2018-03-29

申请号：US15562462

申请日：2016-04-08

Applicant: University of Houston System

Inventor： Jae-Hyun Ryou ,  Shahab Shervin ,  Seung Hwan Kim

IPC: H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78

CPC classification number: H01S5/3201 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823835 ,  H01L29/0657 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/4908 ,  H01L29/7786 ,  H01L29/7845 ,  H01L29/84 ,  H01L33/02 ,  H01L33/486 ,  H01S5/32391 ,  H01S5/3406

Abstract: Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.

公开(公告)号：US20160233647A1

公开(公告)日：2016-08-11

申请号：US15099906

申请日：2016-04-15

Applicant: UCL Business PLC

Inventor： Huiyun LIU ,  Andrew David LEE ,  Alwyn John SEEDS

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/02 ,  H01S5/30

CPC classification number: H01S5/3412 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02538 ,  H01L21/02549 ,  H01L21/02661 ,  H01S5/02 ,  H01S5/021 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/343 ,  H01S5/34313

Abstract: A semiconductor device comprising a silicon substrate on which is grown a

公开(公告)号：US09379522B1

公开(公告)日：2016-06-28

申请号：US14444687

申请日：2014-07-28

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Christiane Poblenz Elsass

IPC: H01L21/00 ,  H01S5/343 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/12 ,  H01S5/34 ,  H01S5/10

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3406 ,  H01S5/34346

Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

Abstract translation: 光学装置具有包含表面区域和应变控制区域的含有氮化镓和氮的衬底，所述应变控制区域被配置为将量子阱区域保持在预定的应变状态。 该装置还具有覆盖在应变控制区域上的多个量子阱区域。

公开(公告)号：US09093820B1

公开(公告)日：2015-07-28

申请号：US13357518

申请日：2012-01-24

Applicant: James W. Raring ,  You-Da Lin ,  Christiane Poblenz

Inventor： James W. Raring ,  You-Da Lin ,  Christiane Poblenz

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/34

CPC classification number: H01S5/3219 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18 ,  H01S2304/04

Abstract: An optical device includes a gallium and nitrogen containing substrate having a surface region and an optical blocking region of InAlN material overlying the surface region. A strain control region maintain quantum wells within a predetermined strain state. The strained region is preferably a confined heterostructure.

Abstract translation: 一种光学器件包括含镓和氮的衬底，其具有覆盖在表面区域上的InAlN材料的表面区域和光学阻挡区域。 应变控制区域将量子阱保持在预定的应变状态。 应变区优选为受限异质结构。

公开(公告)号：US09083150B2

公开(公告)日：2015-07-14

申请号：US14507374

申请日：2014-10-06

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Junji Yoshida ,  Hirokazu Itoh ,  Satoshi Irino ,  Yuichiro Irie ,  Taketsugu Sawamura

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/34 ,  H01S3/067 ,  H01S5/22 ,  H01S5/024 ,  H01S3/04

CPC classification number: H01S5/3216 ,  B82Y20/00 ,  H01S3/04 ,  H01S3/0675 ,  H01S3/06754 ,  H01S3/094003 ,  H01S3/094011 ,  H01S3/09415 ,  H01S3/302 ,  H01S5/0064 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/024 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1064 ,  H01S5/146 ,  H01S5/2018 ,  H01S5/2077 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/227 ,  H01S5/3213 ,  H01S5/34 ,  H01S5/3406 ,  H01S5/34306 ,  H01S5/3434 ,  H01S2301/03 ,  H01S2301/166

Abstract: An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

Abstract translation: 输出预定波长的激光的光学半导体器件包括：在厚度方向上位于p型覆层和n型覆层之间的量子阱有源层; 位于量子阱有源层和n型覆层之间的单独限制异质结构层; 以及位于分离的限制异质结构层和n型覆层之间的电场分布控制层，并且由至少两个具有比构成量子阱活性的势垒层的带隙能量大的带隙能量的半导体层构成 层。

公开(公告)号：US08816319B1

公开(公告)日：2014-08-26

申请号：US13288268

申请日：2011-11-03

Applicant: James W. Raring ,  Christiane Poblenz

Inventor： James W. Raring ,  Christiane Poblenz

IPC: H01L21/00

CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/2018 ,  H01S5/2031 ,  H01S5/2201 ,  H01S5/3063 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3406 ,  H01S5/34346

Abstract: An optical device has a gallium and nitrogen containing substrate including a surface region and a strain control region, the strain control region being configured to maintain a quantum well region within a predetermined strain state. The device also has a plurality of quantum well regions overlying the strain control region.

Abstract translation: 光学装置具有包含表面区域和应变控制区域的含有氮化镓和氮的衬底，所述应变控制区域被配置为将量子阱区域保持在预定的应变状态。 该装置还具有覆盖在应变控制区域上的多个量子阱区域。

公开(公告)号：US08803936B2

公开(公告)日：2014-08-12

申请号：US13505516

申请日：2010-12-15

Applicant: Kazuhiko Adachi ,  Shunichi Sato ,  Satoru Sugawara ,  Toshihiro Ishii

Inventor： Kazuhiko Adachi ,  Shunichi Sato ,  Satoru Sugawara ,  Toshihiro Ishii

IPC: B41J2/385 ,  B41J2/41 ,  B41J2/45 ,  B41J15/14 ,  B41J27/00 ,  B41J2/435 ,  B41J2/47 ,  B41J2/455

CPC classification number: B41J2/45 ,  B41J2/455 ,  B41J2/473 ,  B82Y20/00 ,  G02B26/124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/1815 ,  H01S5/02208 ,  H01S5/02228 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02288 ,  H01S5/02296 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18394 ,  H01S5/3406 ,  H01S5/423 ,  H01L2924/00014

Abstract: An optical device includes a surface-emitting laser array having a plurality of light-emitting portions; a package member on which the surface-emitting laser array is disposed; and a transparent member retained on the package member and disposed on an optical path of a light beam emitted by the surface-emitting laser array. The transparent member includes an incident plane on which the light beam emitted by the surface-emitting laser array is incident. The incident plane is inclined with respect to an emitting surface of the surface-emitting laser array at a first inclination angle which is smaller than a second inclination angle at which the light emitted by one of the light-emitting portions is incident on another, most-distant one, of the light-emitting portions via reflection by the transparent member.

Abstract translation: 光学器件包括具有多个发光部分的表面发射激光器阵列; 表面发射激光器阵列设置在其上的封装构件; 以及保持在封装构件上并设置在由表面发射激光器阵列发射的光束的光路上的透明构件。 透明构件包括由表面发射激光器阵列发射的光束入射的入射面。 入射面相对于表面发射激光器阵列的发射表面以比第一倾斜角小的第一倾斜角度倾斜，第二倾斜角由发光部分中的一个发射的光入射到另一个 通过透明构件的反射而分离发光部分。

公开(公告)号：US08802468B2

公开(公告)日：2014-08-12

申请号：US13910153

申请日：2013-06-05

Applicant: Fujitsu Limited ,  The University of Tokyo

Inventor： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

IPC: H01S5/22 ,  H01L33/06

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/0655 ,  H01S5/209 ,  H01S5/22 ,  H01S5/3086 ,  H01S5/3406 ,  H01S5/3412 ,  H01S5/34306 ,  H01S2301/173 ,  Y10S977/774

Abstract: A semiconductor light emitting device includes a lower cladding layer, an active layer, and an AlGaAs upper cladding layer mounted on a GaAs substrate. The semiconductor light emitting device has a ridge structure including the AlGaAs upper cladding layer. The semiconductor light emitting device further includes an InGaAs etching stop layer provided in contact with the lower side of the AlGaAs upper cladding layer. The InGaAs etching stop layer has a band gap greater than that of the active layer.

Abstract translation: 半导体发光器件包括安装在GaAs衬底上的下包层，有源层和AlGaAs上覆层。 半导体发光器件具有包括AlGaAs上覆层的脊结构。 半导体发光器件还包括与AlGaAs上覆层的下侧接触设置的InGaAs蚀刻停止层。 InGaAs蚀刻停止层的带隙大于有源层的带隙。

公开(公告)号：US08729526B2

公开(公告)日：2014-05-20

申请号：US12965588

申请日：2010-12-10

Applicant: Nobuaki Hatori

Inventor： Nobuaki Hatori

IPC: H01L29/06

CPC classification number: H01S5/3412 ,  B82Y20/00 ,  H01S5/3404 ,  H01S5/3406 ,  H01S5/34313 ,  H01S5/50 ,  H01S2301/145

Abstract: An optical semiconductor device includes a substrate; and an active layer disposed on the substrate, wherein the active layer includes a first barrier layer containing GaAs, a quantum dot layer, which is disposed on the first barrier layer, which includes a quantum dot containing InAs, which includes a side barrier layer which covers at least a part of the quantum dot and a side surface of the quantum dot, and having an elongation strain inherent therein, and a second barrier layer disposed on the quantum dot layer.

Abstract translation: 光学半导体器件包括衬底; 以及设置在所述基板上的有源层，其中所述有源层包括含有GaAs的第一势垒层，设置在所述第一势垒层上的量子点层，所述量子点层包括含有InAs的量子点，所述量子点包括侧阻挡层， 覆盖量子点的至少一部分和量子点的侧表面，并且其中固有的伸长应变和设置在量子点层上的第二阻挡层。