公开(公告)号：US11823974B2

公开(公告)日：2023-11-21

申请号：US17607823

申请日：2020-05-01

申请人： Northwestern University

发明人： Matthew Grayson

IPC分类号： H01L23/373 ,  F25B1/00 ,  F25B21/00

CPC分类号： H01L23/3738 ,  F25B1/00 ,  F25B21/00 ,  F25B2321/003

摘要： Systems and/or methods can provide for solid-state refrigeration below 1 degree Kelvin. By applying a simple sequence of ac electrical signals to a gated semiconductor device, electrons are cooled in a refrigeration sequence that, in turn, provides cooling directly to the heat load of interest. Electrons in a single subband of a semiconductor quantum well are expanded adiabatically into several subbands, resulting in a temperature drop. Repeated application of this cycle at MHz-GHz frequencies results in a significant cooling power. The anticipated cooling powers can compete with today's standard cryogenic system, the dilution refrigerator, which represents the market standard for achieving cryogenic temperatures.

公开(公告)号：US07351996B2

公开(公告)日：2008-04-01

申请号：US11289206

申请日：2005-11-28

申请人： Avto Tavkhelidze ,  Vasiko Svanidze ,  Magnus Larsson

发明人： Avto Tavkhelidze ,  Vasiko Svanidze ,  Magnus Larsson

IPC分类号： H01L29/06

CPC分类号： H01L29/88 ,  F25B2321/003 ,  H01L35/00 ,  Y10S257/93

摘要： The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum or silicon nitride, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum or silicon nitride, and placing the insulator between the collector electrode and the emitter electrode.

摘要翻译： 本发明包括一种隧穿装置，其中集电极被修改，使得能量较高的电子从发射电极到集电极的隧道效应得到增强。 在一个实施例中，集电极与布置在集电极和发射极之间的绝缘体层，优选为铝或氮化硅接触。 本发明还包括一种用于增强高能电子从发射电极到集电极的隧穿的方法，所述方法包括使集电极与绝缘体（优选为铝或氮化硅）接触并将绝缘体放置在集电极之间的步骤 电极和发射极。

公开(公告)号：US20070283702A1

公开(公告)日：2007-12-13

申请号：US11123346

申请日：2005-05-06

申请人： Richard Strnad

发明人： Richard Strnad

IPC分类号： F25B21/02 ,  H02N10/00

CPC分类号： F25B21/00 ,  F25B2321/003 ,  H01L35/32 ,  Y02B30/66

摘要： The dual heat to cooling converter is comprised of one device which converts thermal energy to electricity and the second device which converts electrical energy to cooling. The emf generating device may be of the thermoelectric type and the cooling device of the thermionic type and conversely, the emf generating device may be of the thermionic type and the cooling device may be of the thermoelectric type. The unwanted heat generated during the conversion process is removed by the adiabatic plane, located between the emf generator and the cooling generator. The emf generator and the cooling generator and thermally isolated and electrically connected.

摘要翻译： 双重热转换器由一个将热能转换为电能的装置和将电能转换成冷却的第二装置组成。 电动发电装置可以是热电型的冷热装置和热离子型的冷却装置，相反地，电动发电装置可以是热离子型，冷却装置也可以是热电型。 在转换过程中产生的不需要的热量由位于电磁发生器和冷却发生器之间的绝热平面去除。 电动发电机和冷却发电机并进行热隔离和电气连接。

公开(公告)号：US07211891B2

公开(公告)日：2007-05-01

申请号：US10996457

申请日：2004-11-26

申请人： Kenji Shimogishi ,  Yoshihiko Matsuo ,  Yoichi Tsuda

发明人： Kenji Shimogishi ,  Yoshihiko Matsuo ,  Yoichi Tsuda

IPC分类号： H01L23/34 ,  H01L31/058 ,  H01L29/06 ,  H01L23/495 ,  H01L23/10

CPC分类号： H01S5/02407 ,  F25B21/00 ,  F25B2321/003 ,  G11B7/126 ,  H01L23/38 ,  H01L37/00 ,  H01L2924/0002 ,  H01S5/02208 ,  H01S5/02415 ,  H01S5/06808 ,  Y02B30/66 ,  Y10S257/93 ,  H01L2924/00

摘要： There is provided a small-size electronic heat pump device which is low in power consumption and which secures a vacuum gap without use of an additional circuit. The electronic heat pump device includes an emitter 1 and a collector 2. An electrically and thermally insulative spacer section 5 for keeping a space, i.e. vacuum gap G between an emitter electrode 11 and a collector electrode 21 constant is integrally formed in a semiconductor substrate 20 of the collector 2, which makes it possible to maintain the vacuum gap to be a specified space while a back flow of heat is prevented in a simple structure with a reduced number of component parts.

摘要翻译： 提供了一种小型电子热泵装置，其功耗低，并且在不使用附加电路的情况下确保真空间隙。 电子热泵装置包括发射器1和集电器2。 在集电体2的半导体基板20中，一体地形成有用于保持空间的绝热隔离部分5，即发射电极11和集电极21之间的真空间隙G恒定，这使得可以保持真空间隙 成为规定的空间，同时以简单的结构防止组件的数量减少的热回流。

公开(公告)号：US20060130489A1

公开(公告)日：2006-06-22

申请号：US11015260

申请日：2004-12-17

申请人： Stanton Weaver

发明人： Stanton Weaver

IPC分类号： F25B21/00 ,  H01L35/28 ,  B21D53/02

CPC分类号： H01L35/00 ,  B82Y10/00 ,  B82Y30/00 ,  F25B21/00 ,  F25B2321/003 ,  H01J45/00 ,  Y02B30/66 ,  Y10T29/4935

摘要： A method of manufacturing a thermal transfer device including providing first and second thermally conductive substrates that are substantially atomically flat, providing a patterned electrical barrier having a plurality of closed shapes on the first thermally conductive substrate and providing a nanotube catalyst material on the first thermally conductive substrate in a nanotube growth area oriented within each of the plurality of closed shapes of the patterned electrical barrier. The method also includes orienting the second thermally conductive substrate opposite the first thermally conductive substrate such that the patterned electrical barrier is disposed between the first and second thermally conductive substrates and providing a precursor gas proximate the nanotube catalyst material to facilitate growth of nanotubes in the nanotube growth areas from the first thermally conductive substrate toward, and limited by, the second thermally conductive substrate. In this thermal transfer device, introduction of current flow between the first and second thermally conductive substrates enables heat transfer between the first and second thermally conductive substrates via a flow of electrons between the first and second thermally conductive substrates.

摘要翻译： 一种制造热转印装置的方法，包括提供基本上原子上平坦的第一和第二导热基底，在第一导热基底上提供具有多个封闭形状的图案化电屏障，并在第一导热基底上提供纳米管催化剂材料 衬底在取向于图案化电屏障的多个封闭形状的每一个内的纳米管生长区域中。 该方法还包括将第二导热衬底定位成与第一导热衬底相对的方向，使得图案化电阻挡层设置在第一和第二导热衬底之间，并提供靠近纳米管催化剂材料的前体气体，以促进纳米管在纳米管中的生长 生长区域从第一导热衬底朝向第二导热衬底限制。 在该热转印装置中，在第一导热基板和第二导热基板之间引入电流可以使第一和第二导热基板之间的电流经由第一和第二导热基板之间的电流传递。

公开(公告)号：US20060060835A1

公开(公告)日：2006-03-23

申请号：US10534633

申请日：2003-11-27

申请人： Avto Tavkhelidze ,  Leri Tsakadze

发明人： Avto Tavkhelidze ,  Leri Tsakadze

IPC分类号： H01L29/08 ,  H01L35/24

CPC分类号： H01J45/00 ,  F25B21/00 ,  F25B2321/003 ,  H01J19/24 ,  H01J21/02 ,  Y02B30/66 ,  Y10S438/979

摘要： The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted with an insulator layer, preferably aluminum oxide, disposed between the collector and emitter electrodes. The present invention additionally comprises a method for enhancing tunneling of higher energy electrons from an emitter electrode to a collector electrode, the method comprising the step of contacting the collector electrode with an insulator, preferably aluminum oxide, and placing the insulator between the collector electrode and the emitter electrode.

摘要翻译： 本发明包括一种隧穿装置，其中集电极被修改，使得能量较高的电子从发射电极到集电极的隧道效应得到增强。 在一个实施例中，集电极与设置在集电极和发射极之间的绝缘体层，优选氧化铝接触。 本发明还包括一种用于增强高能电子从发射电极到集电极的隧穿的方法，所述方法包括使集电极与绝缘体（优选氧化铝）接触的步骤，并将绝缘体放置在集电极和 发射电极。

公开(公告)号：US20060000226A1

公开(公告)日：2006-01-05

申请号：US10880807

申请日：2004-06-30

申请人： Stanton Weaver

发明人： Stanton Weaver

IPC分类号： F25B21/00 ,  F25B49/00

CPC分类号： F25B21/00 ,  F25B2321/003 ,  Y02B30/66 ,  Y10T29/49147

摘要： A thermal transfer device having a first substrate layer, a second substrate layer and first and second electrodes disposed between the first substrate layer and the second substrate layer. The thermal transfer device also includes a release layer disposed between the first electrode and the second electrode and an actuator disposed adjacent the first and second electrodes. The actuator is adapted to separate the first and second electrodes from the release layer to open a thermotunneling gap between the first and second electrodes, and wherein the actuator is adapted to actively control the thermotunneling gap.

摘要翻译： 一种热转印装置，具有第一基底层，第二基底层和设置在第一基底层和第二基底层之间的第一和第二电极。 热转印装置还包括设置在第一电极和第二电极之间的释放层和邻近第一和第二电极设置的致动器。 致动器适于将第一和第二电极与释放层分开以打开第一和第二电极之间的热电穿孔间隙，并且其中致动器适于主动地控制热电穿孔间隙。

公开(公告)号：US20050104185A1

公开(公告)日：2005-05-19

申请号：US10984979

申请日：2004-11-10

申请人： Kenji Shimogishi ,  Yoshihiko Matsuo ,  Yoichi Tsuda

发明人： Kenji Shimogishi ,  Yoshihiko Matsuo ,  Yoichi Tsuda

IPC分类号： F25B21/00 ,  F25B30/00 ,  H01J45/00 ,  H01L35/32 ,  H01L23/02 ,  H01L21/48

CPC分类号： H01J45/00 ,  F25B21/00 ,  F25B2321/003 ,  F25D2331/805 ,  F25D2331/809 ,  H01L35/32 ,  H01L2924/0002 ,  Y02B30/66 ,  Y10S438/979 ,  H01L2924/00

摘要： An electronic heat pump device has an emitter and a collector, stems supporting these components, a spacing retention member for keeping a spacing between the stems constant, and a sealing member for maintaining a vacuum between the stems. The emitter has a first semiconductor substrate and an emitter electrode, while the collector has a second semiconductor substrate and a collector electrode. The emitter electrode and the collector electrode are disposed so as to be opposed to each other with a space interposed therebetween. At least one of the first and second semiconductor substrates is integrally formed with electrically and thermally insulative spacers that keep the space between the emitter electrode and the collector electrode constant.

摘要翻译： 电子热泵装置具有发射器和收集器，支撑这些部件的杆，用于保持杆之间的间隔恒定的间隔保持构件和用于保持杆之间的真空的密封构件。 发射极具有第一半导体衬底和发射极，而集电极具有第二半导体衬底和集电极。 发射电极和集电极配置成彼此相对，间隔开。 第一和第二半导体衬底中的至少一个半导体衬底一体地形成有保持发射电极和集电极之间的空间恒定的电绝缘和隔热隔离物。

公开(公告)号：US06809417B1

公开(公告)日：2004-10-26

申请号：US10408471

申请日：2003-04-07

申请人： Nazzareno Rossetti

发明人： Nazzareno Rossetti

IPC分类号： H01L2310

CPC分类号： H01L23/38 ,  F25B21/00 ,  F25B2321/003 ,  H01L23/34 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/13062 ,  H01L2924/1461 ,  Y02B30/66 ,  H01L2924/00 ,  H01L2224/0401

摘要： A power circuitry with a thermionic cooling system is provided. The system includes a voltage regulator and a heat rectifying device to cool the voltage regulator. The heat rectifying device includes a heat collector and a heat barrier, formed between the voltage regulator and the heat collector. An auxiliary voltage generator enables the electrons of the voltage regulator to tunnel onto the heat collector through the heat barrier. The voltage regulator may include a shared substrate and power transistors, generating a regulated voltage. In some embodiments the controller keeps a temperature in a preselected range by controlling the power transistors, the auxiliary voltage generator, and a fan. In some embodiments a load is integrated together with the thermionic cooling system so that the load itself can be cooled by the heat rectifying device.

摘要翻译： 提供具有热离子冷却系统的电源电路。 该系统包括电压调节器和用于冷却电压调节器的热整流装置。 热整流装置包括形成在电压调节器和集热器之间的集热器和热障。 辅助电压发生器使得电压调节器的电子能够通过隔热层穿过集热器。 电压调节器可以包括共用衬底和功率晶体管，产生调节电压。 在一些实施例中，控制器通过控制功率晶体管，辅助电压发生器和风扇将温度保持在预选范围内。 在一些实施例中，负载与热离子冷却系统一起集成，使得负载本身可以由热整流装置冷却。

公开(公告)号：US20030029172A1

公开(公告)日：2003-02-13

申请号：US10149260

申请日：2002-08-27

发明人： Burkhard Suthoff

IPC分类号： F25B021/00

CPC分类号： F25B21/00 ,  F25B2321/003 ,  H01L2924/0002 ,  Y02B30/66 ,  H01L2924/00

摘要： The invention relates to a novel cooling system (100) in which waste heat to be dissipated is first absorbed by an electron emission layer (15). The heat induces a discharge of electrons (13) from the surface of the electron emission layer, whereby the electrons are drawn off by a suction electrode (10) which is located on a positive potential located opposite the emission layer (15). The thermal energy carried along by the electrons (13) induce a heat transfer from the electron emission layer (15) to the suction electrode (10). The intensity of the electron flow can be controlled by the bias voltage of a grid (12) which is arranged between the electron emission layer (15) and the suction electrode (10). The surface of the electron emission layer (15) is preferably composed of alkaline earth metals such as barium or cesium.