利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.015 秒)

    Imaging sensor, imaging apparatus, and imaging method
    4.
    发明授权
    Imaging sensor, imaging apparatus, and imaging method 有权

    公开(公告)号：US12108174B2

    公开(公告)日：2024-10-01

    申请号：US18054108

    申请日：2022-11-09

    申请人： CANON KABUSHIKI KAISHA

    发明人： Kenzo Tojima

    IPC分类号： H04N25/589 ,  H04N25/571

    CPC分类号： H04N25/589 ,  H04N25/573 ,  H04N25/575

    摘要： In a case where illuminance is high, an error between the number of photons per frame calculated from time information and the number of photons and the actually expected number of photons per frame is reduced. In a time counter that counts a clock from the start of exposure in one frame, one-count time in the clock is switched depending on the illuminance. In a case where a pixel counter is saturated within a period of one frame, the illuminance is determined to be high, and a high-illuminance clock in which one-count time is set more minutely in the first half of one frame is used to count. In a case where the illuminance is not determined to be high, a normal clock is used to count.

    Image sensor with configurable pixel circuit and method
    5.
    发明授权
    Image sensor with configurable pixel circuit and method 有权

    公开(公告)号：US11962926B2

    公开(公告)日：2024-04-16

    申请号：US18002775

    申请日：2021-08-04

    申请人： Beijing RuisiZhixin Technology Co., Ltd. ,  Alpsentek GmbH

    发明人： Yingyun Zha ,  Jian Deng ,  Roger Mark Bostock

    IPC分类号： H04N25/77 ,  H01L27/146 ,  H04N25/571 ,  H04N25/766

    CPC分类号： H04N25/77 ,  H01L27/14612 ,  H04N25/573 ,  H04N25/766

    摘要： The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.

    IMAGE SENSOR WITH CONFIGURABLE PIXEL CIRCUIT AND METHOD
    9.
    发明公开
    IMAGE SENSOR WITH CONFIGURABLE PIXEL CIRCUIT AND METHOD 审中-公开

    公开(公告)号：US20230247325A1

    公开(公告)日：2023-08-03

    申请号：US18002775

    申请日：2021-08-04

    申请人： Beijing RuisiZhixin Technology Co., Ltd. ,  Alpsentek GmbH

    发明人： Yingyun ZHA ,  Jian DENG ,  Roger Mark BOSTOCK

    IPC分类号： H04N25/77 ,  H04N25/571 ,  H04N25/766 ,  H01L27/146

    CPC分类号： H04N25/77 ,  H04N25/573 ,  H04N25/766 ,  H01L27/14612

    摘要： The present disclosure relates to an image sensor comprising a plurality of pixel circuits each comprising a photodiode connected between ground and a floating diffusion (FD) node, a reset transistor (MRST) connected between a first voltage supply and the floating diffusion (FD) node, and a source follower transistor (MSF), wherein its drain is connected to a second voltage supply, the gate is connected to a floating diffusion (FD) node and the source is connected to a row select transistor (MSEL). The row select transistor (MSEL) is connected between the source of the source follower transistor (MSF) and a common column output. Each pixel circuit is configured to output an output signal corresponding to a light incident on the photodiode. Each pixel circuit includes at least one additional transistor for configuring each pixel circuit to selectively output a linear integration signal or a logarithmic signal.