公开(公告)号：US12081888B2

公开(公告)日：2024-09-03

申请号：US17660084

申请日：2022-04-21

Applicant: STMicroelectronics (Grenoble 2) SAS

Inventor： Alexandre Mas ,  Abdessamed Mekki ,  Cedric Tubert

IPC: H04N25/75 ,  H03M1/12 ,  H03M1/46 ,  H04N25/625 ,  H04N25/677

CPC classification number: H04N25/75 ,  H03M1/1245 ,  H03M1/46 ,  H04N25/625 ,  H04N25/677

Abstract: The present disclosure relates to a read-out circuit comprising N inputs configured to be connected to N respective outputs of a pixel array of an image sensor, with N being an integer strictly greater than 1; and N analog-to-digital converters organized in K groups, with K being an integer strictly greater than 1 and strictly less than N, and each having a first input coupled to a respective one of the N inputs and a second input. In each group, the second inputs of the analog-to-digital converters of the group are connected together, electrically decoupled from the second inputs of the analog-to-digital converters of the other groups, and configured to receive a first reference signal that is identical for all the analog-to-digital converters of the group.

公开(公告)号：US20240244347A1

公开(公告)日：2024-07-18

申请号：US18563888

申请日：2022-05-31

Applicant: ams Sensors Belgium BVBA

Inventor： Jason INMAN ,  Kevin FRONCZAK

IPC: H04N25/625 ,  H04N25/75

CPC classification number: H04N25/625 ,  H04N25/75

Abstract: An imaging pixel to mitigate cross-talk effects comprises a voltage supply node to receive a supply voltage, and an output node to provide a pixel output signal. The imaging pixel further comprises a photosensitive element, and a source follower transistor having a control node coupled to the photosensitive element. The source follower transistor is interposed between the voltage supply node and the output node. The imaging pixel comprises a clamping circuit being interposed between the voltage supply node and the output node.

公开(公告)号：US20240163577A1

公开(公告)日：2024-05-16

申请号：US18488840

申请日：2023-10-17

Applicant: CANON KABUSHIKI KAISHA

Inventor： AIHIKO NUMATA

IPC: H04N25/625

CPC classification number: H04N25/625

Abstract: A photoelectric conversion apparatus includes a photoelectric conversion element including a pixel area where a plurality of pixels composed of avalanche photodiodes for photoelectrically converting an optical image is two-dimensionally arranged, the photoelectric conversion element being configured to simultaneously read signals from a first pixel group and a second pixel group in the pixel area, at least one processor, and a memory coupled to the at least one processor, the memory storing instructions that, when executed by the at least one processor, cause the at least one processor to generate an image based on the read signals, acquire characteristic information regarding crosstalk between the plurality of pixels, generate correction information based on the characteristic information, and perform a correction process on the image using the correction information. Correction information different between the first and second pixel groups is generated.