公开(公告)号：US20020008011A1

公开(公告)日：2002-01-24

申请号：US09818997

申请日：2001-03-28

发明人： Raymund Sonnenschein ,  Christoph Batz-Sohn

IPC分类号： B01D003/00 ,  C07F007/20

CPC分类号： B01D3/009 ,  C07F7/0829 ,  C07F7/14 ,  C07F7/1876 ,  Y02P20/127

摘要： A method for preparing an organosilane functionalized in the 3 position includes reacting an allyl compound (H2CnullCHnullCH2X) with a silane (R2R3R4SiH) in a reaction column under a pressure between 1 bar and 25 bar, in the presence of a heterogeneous platinum catalyst. The silane reactant is present in the reaction column, and introduced into the reaction column, in a stoichiometric excess with respect to the allyl compound. The reaction column preferably includes a reaction zone, a first separation zone located above the reaction zone, and a second separation zone located below the reaction zone, wherein a first product exits the reaction zone and enters the first separation zone, and a second product exits the reaction zone and enters the second separation zone. Distillation occurs simultaneously with the reaction in the reaction chamber. In one preferred aspect of this invention, chloropropyltrichlorosilane is produced by reacting allyl chloride with trichlorosilane

摘要翻译： 制备在3位官能化的有机硅烷的方法包括在反应柱中，在1巴和25巴之间的压力下，在异质铂存在下使烯丙基化合物（H 2 C = CH-CH 2）与硅烷（R 2 R 3 R 4 SiH） 催化剂。 硅烷反应物存在于反应塔中，并以相对于烯丙基化合物的化学计量过量引入反应塔。 反应塔优选包括反应区，位于反应区上方的第一分离区和位于反应区下方的第二分离区，其中第一产物离开反应区并进入第一分离区，第二产物离开 反应区并进入第二分离区。 蒸馏与反应室中的反应同时发生。 在本发明的一个优选方面，氯丙基三氯硅烷是通过烯丙基氯与三氯硅烷反应生产的

公开(公告)号：US20010050217A1

公开(公告)日：2001-12-13

申请号：US09335772

申请日：1999-06-18

发明人： KATSUHIRO UEHARA ,  MIKIO ENDO ,  TOHRU KUBOTA ,  SATOSHI UCHIDA ,  KANJI MUROFUSHI

IPC分类号： B01D003/10 ,  B01D003/34 ,  C07F007/18 ,  C07F007/20

CPC分类号： C07F7/20 ,  C07F7/1804

摘要： A (meth)acryloxy-bearing alkoxysilane is isolated and purified to a high purity by distilling a reaction solution containing the (meth)acryloxy-bearing alkoxysilane in a thin-layer distillation device at a temperature of 90-160null C. and a vacuum of 1-15 mmHg. The resulting alkoxysilane product does not give rise to the quality problem that the product will gradually whiten during storage owing to contact with air. The occurrence of self-polymerization of the alkoxysilane is restrained.

摘要翻译： 含有（甲基）丙烯酰氧基的烷氧基硅烷通过在90-160℃的温度下在薄层蒸馏装置中蒸馏含有（甲基）丙烯酰氧基的烷氧基硅烷的反应溶液和真空，分离和纯化至高纯度 为1-15 mmHg。 所得到的烷氧基硅烷产物不会引起质量问题，即由于与空气接触，产品在储存期间将逐渐变白。 抑制烷氧基硅烷的自聚合的发生。

公开(公告)号：US20040220420A1

公开(公告)日：2004-11-04

申请号：US10484413

申请日：2004-01-20

发明人： Stephen Westall ,  Avril Surgenor ,  Timothy Bunce

IPC分类号： C07F007/20 ,  C07F007/04

CPC分类号： C08G77/045 ,  C07F7/0879 ,  C08G77/38

摘要： A silane or siloxane containing at least one organic group is prepared by a hydrosilylation reaction between a silane or siloxane (A) containing at least one SinullH group and an allyl compound (B) in the presence of a noble metal catalyst. The silane or siloxane (A) and the allyl compound (B) are fed continuously through a reaction zone which is maintained at a temperature in the range 115-200null C. and which is provided with heat exchanger means to dissipate the heat from the exothermic hydrosilylation reaction. The residence time of (A) and (B) in the reaction zone is less than 20 minutes.

公开(公告)号：US20040138476A1

公开(公告)日：2004-07-15

申请号：US10687148

申请日：2003-10-16

发明人： Stephan Kirchmeyer ,  Sergei Ponomarenko

IPC分类号： C07D49/14 ,  C07F007/08 ,  C07F007/20

CPC分类号： H01L51/0036 ,  C07D333/18 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention relates to a process for preparing compounds of the formula (I), 1 where n is an integer from 2 to 5, R1 is H or a C1-C20-alkyl group which may be interrupted by one or more O or S atoms, silylene, phosphonoyl or phosphoryl groups and Ar is substituted or unsubstituted 1,4-phenylene, 2,7-fluorene or 2,5-thiophene, with Ar being able to be identical or different, semiconductive layers comprising these compounds and their use in semiconductor technology.

摘要翻译： 本发明涉及制备式（I）化合物的方法，其中n为2至5的整数，R 1为H或可被一个或多个O中断的C 1 -C 20 - 烷基 或S原子，亚甲硅烷基，膦酰基或磷酰基，Ar是取代或未取代的1,4-亚苯基，2,7-芴或2,5-噻吩，其中Ar可以相同或不同，包含这些化合物的半导电层和 它们在半导体技术中的应用。