公开(公告)号：US20190212484A1

公开(公告)日：2019-07-11

申请号：US16357698

申请日：2019-03-19

申请人： Materion Corporation

发明人： Robert Sprague ,  Shengyuan Bai

IPC分类号： G02B5/28 ,  C23C14/34 ,  C23C14/14 ,  C23C14/06 ,  C23C14/10

CPC分类号： G02B5/281 ,  C23C14/06 ,  C23C14/0652 ,  C23C14/10 ,  C23C14/14 ,  C23C14/3414 ,  C23C14/3457

摘要： An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO2, SiOx, SiOxNy, a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO2 as the low index layers.

公开(公告)号：US09824888B2

公开(公告)日：2017-11-21

申请号：US14278530

申请日：2014-05-15

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： H01L29/24 ,  H01L21/02 ,  C23C14/34 ,  C23C14/35 ,  C23C14/08 ,  H01L29/786

CPC分类号： H01L21/02565 ,  C23C14/086 ,  C23C14/3457 ,  C23C14/35 ,  H01L21/02554 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02686 ,  H01L29/24 ,  H01L29/7869

摘要： To provide a crystalline oxide semiconductor film. By collision of ions with a target including a crystalline In—Ga—Zn oxide, a flat-plate-like In—Ga—Zn oxide is separated. In the flat-plate-like In—Ga—Zn oxide, a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including a zinc atom and an oxygen atom, a third layer including an indium atom and an oxygen atom, and a fourth layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order. After the flat-plate-like In—Ga—Zn oxide is deposited over a substrate while maintaining the crystallinity, the second layer is gasified and exhausted.

公开(公告)号：US09773917B2

公开(公告)日：2017-09-26

申请号：US14651376

申请日：2014-10-30

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jiangbo Chen ,  Dongfang Wang

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  C23C14/08 ,  C23C14/14 ,  C23C14/28 ,  C23C14/34 ,  C23C16/34 ,  C23C16/40 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  C23C14/08 ,  C23C14/086 ,  C23C14/14 ,  C23C14/28 ,  C23C14/3457 ,  C23C14/3492 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78696

摘要： A thin film transistor and a manufacturing method thereof, a display substrate and a display device are provided. The method of manufacturing the thin film transistor comprises forming an active layer (4) having characteristics of crystal orientation of C-axis on a substrate (1) by using indium gallium zinc oxide (InGaO3(ZnO)m), where m≧2. The active layer fabricated with InGaO3(ZnO)m has a good electron mobility, and the quality of the fabricated active layer is improved.

公开(公告)号：US20170250077A1

公开(公告)日：2017-08-31

申请号：US15592654

申请日：2017-05-11

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI

IPC分类号： H01L21/02 ,  C23C14/34 ,  H01L29/66 ,  C23C14/08 ,  H01L29/24 ,  H01L29/786

CPC分类号： H01L21/02631 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/3457 ,  H01L21/02428 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/67207 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1052 ,  H01L27/10805 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/14612 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided is an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration. An oxide has a hexagonal atomic arrangement in the case of a single crystal. The oxide has a homologous structure of indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The oxide has a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide. In a Voronoi diagram having a plurality of Voronoi regions obtained through a Voronoi analysis of the lattice point group, a proportion of hexagonal Voronoi regions is higher than or equal to 78% and lower than or equal to 100%.

公开(公告)号：US09704707B2

公开(公告)日：2017-07-11

申请号：US15010377

申请日：2016-01-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  C23C14/08 ,  C23C14/34 ,  H01L27/06 ,  H01L27/092 ,  H01L27/108 ,  H01L27/1156 ,  H01L21/8258

CPC分类号： H01L21/02631 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/3457 ,  H01L21/02428 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/67207 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1052 ,  H01L27/10805 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/14612 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided is an oxide with a novel crystal structure, an oxide with high crystallinity, or an oxide with low impurity concentration. An oxide has a hexagonal atomic arrangement in the case of a single crystal. The oxide has a homologous structure of indium, an element M (aluminum, gallium, yttrium, or tin), and zinc. The oxide has a lattice point group observed through an analysis of a first region in a transmission electron microscopy image of a top surface of the oxide. In a Voronoi diagram having a plurality of Voronoi regions obtained through a Voronoi analysis of the lattice point group, a proportion of hexagonal Voronoi regions is higher than or equal to 78% and lower than or equal to 100%.

公开(公告)号：US20170190858A1

公开(公告)日：2017-07-06

申请号：US15403799

申请日：2017-01-11

申请人： TORAY INDUSTRIES, INC.

发明人： Yusuke Tsukamura ,  Hiroyuki Uebayashi ,  Minoru Yoshida ,  Motoyuki Suzuki

IPC分类号： C08J7/04 ,  C23C16/40 ,  B65D65/40 ,  C23C14/08 ,  C23C14/34 ,  C23C14/06 ,  C23C16/50 ,  C23C14/10

CPC分类号： C08J7/045 ,  B65D65/40 ,  C08F220/14 ,  C08F230/08 ,  C08F259/08 ,  C08F265/06 ,  C08F290/068 ,  C08J2367/02 ,  C08J2433/00 ,  C08J2433/10 ,  C08J2433/12 ,  C08J2433/16 ,  C08J2443/04 ,  C08L33/066 ,  C23C14/0629 ,  C23C14/081 ,  C23C14/086 ,  C23C14/10 ,  C23C14/3457 ,  C23C16/40 ,  C23C16/50 ,  C08F220/20 ,  C08F220/06 ,  C08F2220/1875 ,  C08F220/18

摘要： A gas barrier film including a polymer base, an undercoat layer that contains, as the main component, an acrylic resin having at least one side chain selected from the group consisting of the side chains (I) to (III) mentioned below, and an inorganic layer, wherein the undercoat layer and the inorganic layer are arranged in this order on at least one surface of the polymer base in such a manner that the undercoat layer and the inorganic layer are in contact with each other: (I) a side chain having an acrylic polymer skeleton; (II) a side chain having a dimethylsiloxane skeleton; and (III) a side chain having a skeleton containing a fluorine atom.

公开(公告)号：US20160238759A1

公开(公告)日：2016-08-18

申请号：US15046889

申请日：2016-02-18

申请人： Materion Corporation

发明人： Robert Sprague ,  Shengyuan Bai

IPC分类号： G02B5/28 ,  C23C14/34 ,  C23C14/06 ,  C23C14/14 ,  C23C14/10

CPC分类号： G02B5/281 ,  C23C14/06 ,  C23C14/0652 ,  C23C14/10 ,  C23C14/14 ,  C23C14/3414 ,  C23C14/3457

摘要： An interference filter includes a layers stack comprising a plurality of layers of at least: layers of amorphous hydrogenated silicon with added nitrogen (a-Si:H,N) and layers of one or more dielectric materials, such as SiO2, SiOx, SiOxNy, a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive, or so forth. The interference filter is designed to have a passband center wavelength in the range 750-1000 nm inclusive. Added nitrogen in the a-Si:H,N layers provides improved transmission in the passband without a large decrease in refractive index observed in a-Si:H with comparable transmission. Layers of a dielectric material with a higher refractive index in the range 1.9 to 2.7 inclusive provide a smaller angle shift compared with a similar interference filter using SiO2 as the low index layers.

摘要翻译： 干涉滤光器包括层堆叠，其包括多层至少层：具有添加的氮（a-Si：H，N）的非晶氢化硅层以及一种或多种介电材料的层，例如SiO 2，SiO x，SiO x N y， 具有1.9〜2.7以上的折射率的介电材料，等等。 干涉滤波器被设计成具有在750-1000nm范围内的通带中心波长。 在a-Si：H中添加氮，N层在通带中提供改进的透射率，而在a-Si：H中观察到的具有可比较的透射率的折射率没有大的降低。 与使用SiO 2作为低折射率层的类似的干涉滤光片相比，具有在1.9至2.7范围内的较高折射率的介电材料的层具有较小的角度偏移。

公开(公告)号：US20150249026A1

公开(公告)日：2015-09-03

申请号：US14426606

申请日：2013-07-30

申请人： MITSUBISHI HEAVY INDUSTRIES, LTD.

发明人： Takeshi Tsuno ,  Takayuki Goto ,  Masato Kinouchi ,  Jun Utsumi ,  Kensuke Ide ,  Takenori Suzuki

IPC分类号： H01L21/67 ,  B32B38/18 ,  B32B37/18 ,  H01J37/34 ,  H01L21/18 ,  B81C3/00 ,  C23C14/34 ,  C23C14/50 ,  B32B37/00 ,  B32B38/00

CPC分类号： H01L21/67121 ,  B23K20/02 ,  B23K20/16 ,  B23K20/24 ,  B23K2101/36 ,  B32B37/0046 ,  B32B37/18 ,  B32B38/0012 ,  B32B38/1858 ,  B32B2307/20 ,  B32B2310/08 ,  B32B2311/00 ,  B32B2457/14 ,  B81C3/001 ,  B81C99/0025 ,  C23C14/3407 ,  C23C14/3457 ,  C23C14/3464 ,  C23C14/50 ,  C23C14/564 ,  H01J37/3435 ,  H01L21/187 ,  H01L21/2007

摘要： A room-temperature bonding apparatus includes a vacuum chamber; a first holding mechanism; a second holding mechanism; a beam source; and a pressure bonding mechanism which bonds first and second substrates. At least one of the above members is formed of a first material which is difficult to be sputtered or which does not obstruct a function of a device obtained by bonding the first and second substrates even if the first material is in the bonding surfaces, or a surface of the at least one is covered with the first material.

摘要翻译： 室温接合装置包括真空室; 第一个持有机制; 第二保持机制; 光源; 以及结合第一和​​第二基板的压接机构。 上述构件中的至少一个由难以溅射的第一材料形成，或者即使第一材料在接合表面中也不会妨碍通过接合第一和第二基板而获得的装置的功能，或者 至少一个的表面被第一材料覆盖。

公开(公告)号：US07755733B2

公开(公告)日：2010-07-13

申请号：US11452826

申请日：2006-06-14

申请人： Soon-Joon Rho ,  Hong-Koo Baik ,  Kyung-Chan Kim ,  Jong-Bok Kim ,  Byoung-Har Hwang ,  Han-Jin Ahn

发明人： Soon-Joon Rho ,  Hong-Koo Baik ,  Kyung-Chan Kim ,  Jong-Bok Kim ,  Byoung-Har Hwang ,  Han-Jin Ahn

IPC分类号： G02F1/1337

CPC分类号： C23C16/325 ,  C23C14/0635 ,  C23C14/3457 ,  C23C14/3464 ,  C23C16/56 ,  G02F1/1337 ,  G02F2202/00 ,  H01J37/3429 ,  Y10T428/10

摘要： A liquid crystal display apparatus includes a first display substrate, a second display substrate and a liquid crystal layer disposed therebetween. The first and second display substrates include first and second vertical inorganic alignment layers, respectively, to vertically align liquid crystal molecules of the liquid crystal layer. The first and second vertical inorganic alignment layers each include a silicon carbide and are formed on the first and second display substrates, respectively, by a chemical vapor deposition method or a sputtering method. Thus, processes for the vertical inorganic alignment layer may be simplified, thereby improving manufacturing productivity of the liquid crystal display apparatus.

摘要翻译： 液晶显示装置包括第一显示基板，第二显示基板和设置在其间的液晶层。 第一和第二显示基板分别包括垂直取向液晶层的液晶分子的第一和第二垂直无机取向层。 第一和第二垂直无机取向层各自包括碳化硅，并分别通过化学气相沉积法或溅射法形成在第一和第二显示器基板上。 因此，可以简化用于垂直无机取向层的工艺，从而提高液晶显示装置的制造生产率。

公开(公告)号：US07601246B2

公开(公告)日：2009-10-13

申请号：US10952088

申请日：2004-09-29

申请人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

发明人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

IPC分类号： C23C14/34

CPC分类号： C23C14/3457 ,  C23C14/185 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814 ,  H01L2221/1063

摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

摘要翻译： 将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。 保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。 该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。