公开(公告)号：US20040221802A1

公开(公告)日：2004-11-11

申请号：US10838812

申请日：2004-05-04

发明人： Hirotoshi Iwase ,  Seizo Kato ,  Masatoshi Ochiai ,  Tetsuro Endo

IPC分类号： C30B009/00 ,  C30B011/00 ,  C30B017/00 ,  C30B021/02 ,  C30B028/06 ,  C30B001/00

CPC分类号： C23C14/26 ,  C23C14/243 ,  Y10T117/10

摘要： An evaporation apparatus comprises an elongated crucible having an upper opening and storing an evaporation material, an electric heater which covers the upper opening of the elongated crucible, generates heat by causing electric current to flow therein for heating the evaporation material stored in the crucible, and has an opening through which the evaporation material which is vaporized by heating can pass through, and a fixing member for pressing and fixing the electric heater onto the elongated crucible. Further, between the fixing member and the electric heater, an angle member having surface portions respectively fitting onto an edge portion of the upper surface and an upper portion of the side surface of the elongated crucible is provided along the longitudinal direction of the elongated crucible. A pressing force from the fixing member is made to exert onto the electric heater via the angle member to bring the electric heater into close contact with the elongated crucible.

摘要翻译： 蒸发装置包括具有上开口并存储蒸发材料的细长坩埚，覆盖细长坩埚的上开口的电加热器，通过使电流流入其中以加热存储在坩埚中的蒸发材料而产生热量，以及 具有通过加热蒸发的蒸发材料可以通过的开口，以及用于将电加热器按压并固定到细长坩埚上的固定构件。 此外，在固定构件和电加热器之间，沿着细长坩埚的长度方向设置具有分别配合在上表面的边缘部分和细长坩埚的侧表面的上部的表面部分的角部件。 使来自固定部件的按压力经由角部件施加到电加热器上，使电加热器与细长的坩埚紧密接触。

公开(公告)号：US20040079276A1

公开(公告)日：2004-04-29

申请号：US10650240

申请日：2003-08-27

发明人： Andreas Muhe

IPC分类号： C30B009/00 ,  C30B011/00 ,  C30B017/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B11/003 ,  C30B11/00 ,  C30B29/42 ,  C30B29/44

摘要： This invention is based on the problem of achieving the most planar possible phase boundary extending in the horizontal direction between the still molten material and the material that has already crystallized out in a vertical Bridgman crystal-growing furnace or vertical gradient freeze crystal-growing furnace for crystallizing out the semiconductor melt (4) and doing so at a low cost. Therefore, jacket heaters (11, 12) are provided coaxially with the furnace core containing the crucible (6) and measurement devices for determining radial temperature differences in the space between the jacket heaters (11, 12) and the crucible (6), whereby the heat output of the jacket heaters (11, 12) is adjusted so that the measured temperature differences become zero. Thus, at least in the planes in which the measurement devices are located, radial heat transport is prevented and a phase boundary that is not curved is implemented.

摘要翻译： 本发明基于在垂直布里奇曼晶体生长炉或垂直梯度冷冻晶体生长炉中在仍然熔融的材料和已经结晶出的材料之间在水平方向上实现最平面可能的相边界的问题， 结晶出半导体熔体（4）并以低成本进行。 因此，夹套加热器（11,12）与包含坩埚（6）的炉芯和用于确定夹套加热器（11,12）和坩埚（6）之间的空间中的径向温度差的测量装置同轴地设置，由此 调节外套加热器（11,12）的热输出，使得测得的温差成为零。 因此，至少在测量装置所在的平面中，防止径向热传递，并且实现不弯曲的相位边界。

公开(公告)号：US20030209190A1

公开(公告)日：2003-11-13

申请号：US10382767

申请日：2003-03-05

发明人： Michael L. Genier ,  Richard S. Priestley ,  Rebecca S. Retherford

IPC分类号： C30B009/00 ,  C30B011/00 ,  C30B017/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： G03F7/70958 ,  C30B11/00 ,  C30B29/12 ,  C30B33/00 ,  G03F7/70966 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1092

摘要： A method of making an oriented fluoride crystal blank for transmitting below 250 nm ultraviolet light includes irradiating a fluoride crystal blank with an x-ray beam, detecting the x-ray beams diffracted from the fluoride crystal blank, generating a diffraction pattern from the x-ray beam diffracted from the fluoride crystal blank, determining an angular deviation of an optical axis of the fluoride crystal blank from a specific crystallographic direction, and, if the angular deviation is not within a predefined range, modifying the fluoride crystal blank in a manner such that that the resultant angular deviation between the optical axis of the fluoride crystal blank from the specific crystallographic direction after modifying falls within the predefined range.

摘要翻译： 制造用于在250nm以下紫外线下透射的取向氟化物结晶坯料的方法包括用X射线束照射氟化物晶体坯料，检测从氟化物晶体坯料衍射的x射线束，从x射线衍射产生衍射图案， 从氟化物晶体坯料衍射的X射线束，确定氟化物晶体坯料的光轴与特定结晶方向的角度偏差，并且如果角度偏差不在预定范围内，则以这样的方式修改氟化物晶体坯料 氟化物晶体坯料的光轴与修正后的特定结晶方向的合成角度偏差在预定范围内。

公开(公告)号：US20030172868A1

公开(公告)日：2003-09-18

申请号：US10380144

申请日：2003-03-10

发明人： Jun-Seok Nho ,  Seung-Beom Cho ,  Chang-Seok Ryoo ,  Kwang-Hee Lee ,  Tae-Hyun Kwon

IPC分类号： C01G009/08 ,  C30B009/00 ,  C30B011/00 ,  C30B017/00 ,  C30B021/02 ,  C30B028/06 ,  C01G011/02 ,  C01G013/00

CPC分类号： C01G9/08 ,  C09K11/565

摘要： This invention relates to a method for preparing a Zinc Sulfide powder, and provides a method for preparing a single crystalline powder of Zinc Sulfide (ZnS) a high crystallinity comprising a step of conducting a hydrothermal reaction of a) Zinc Oxide or Zinc acetate as Zinc source and b) thioacetamide or thiourea as Sulfur source at a temperature of 180 to 230null C. and a fluorescent substance using the same as a source.

摘要翻译： 本发明涉及一种制备硫化锌粉末的方法，并提供了一种制备高结晶度的硫化锌（ZnS）单晶粉末的方法，包括进行水热反应的步骤a）氧化锌或醋酸锌作为锌 来源和b）硫代乙酰胺或硫脲作为硫源，温度为180-230℃，使用其作为源的荧光物质。

公开(公告)号：US20030164137A1

公开(公告)日：2003-09-04

申请号：US10288042

申请日：2002-11-04

申请人： H.C. Materials Corporation

发明人： Pengdi Han

IPC分类号： C30B009/00 ,  C30B029/16

CPC分类号： C30B11/00 ,  C30B29/30 ,  C30B29/32 ,  Y10T117/1076 ,  Y10T117/1084 ,  Y10T117/1088 ,  Y10T117/1092

摘要： This invention provides a hybrid Stockbarger zone-leveling melting method for seeded crystallization and the manufacture of homogenous large-sized crystals of lead magnesium niobate-lead titanate (PMN-PT) based solid solutions and related piezocrystals. The invention provides three temperature zones resulting in increased compositional homogeneity and speed of crystal growth, in a cost effective multi-crucible configuration.

摘要翻译： 本发明提供了一种用于种子结晶的混合库存扩散器区域平整熔化方法，以及制造基于铌酸铅铌酸铅 - 钛酸铅（PMN-PT）的固溶体和相关压晶体的均匀大尺寸晶体。 本发明提供三个温度区域，其在成本有效的多坩埚构造中导致增加的组成均匀性和晶体生长速度。

公开(公告)号：US20010025598A1

公开(公告)日：2001-10-04

申请号：US09798631

申请日：2001-03-02

发明人： Joerg Staeblein ,  Andreas Weisleder ,  Gunther Wehrhan ,  Burkhard Speit ,  Lutz Parthier

IPC分类号： C30B011/00 ,  C30B001/00 ,  C30B009/00 ,  C30B017/00

CPC分类号： C30B33/00 ,  C30B29/12 ,  Y10T117/10

摘要： The method for making a uniform, large-size single crystal of calcium fluoride includes placing a single precursor crystal of calcium fluoride in a tempering vessel provided with a cover; introducing calcium fluoride powder into the tempering vessel and subsequently heating the single precursor crystal, preferably in intimate contact with the calcium fluoride powder, in the tempering vessel together with the calcium fluoride powder for two or more hours at temperatures above 1150null C. to temper the precursor crystal and thus form the uniform, large-scale single crystal of calcium fluoride. The uniform large-sized single crystals of calcium fluoride can be used to make improved lens, prism, light-conducting rod, optical window or other optical component for DUV photolithography, steppers, excimer lasers, wafers, computer chips and electronic devices containing the wafers and chips.

摘要翻译： 制造均匀，大尺寸的氟化钙单晶的方法包括将氟化钙的单一前体晶体放置在设置有盖的回火容器中; 将氟化钙粉末引入回火容器中，随后在回火容器中与氟化钙粉末一起加热单一前体晶体，优选与氟化钙粉末紧密接触，与氟化钙粉末一起在高于1150℃的温度下搅拌两个或更多小时以回火 前体晶体，从而形成均匀，大规模的氟化钙单晶。 均匀的大尺寸单晶氟化钙可用于制造用于DUV光刻，步进器，准分子激光器，晶片，计算机芯片和包含晶片的电子器件的改进的透镜，棱镜，导光棒，光学窗口或其他光学部件 与芯片。

公开(公告)号：US20040123795A1

公开(公告)日：2004-07-01

申请号：US10715453

申请日：2003-11-19

申请人： CANON KABUSHIKI KAISHA

发明人： Toshio Ichizaki

IPC分类号： C30B009/00 ,  C30B011/00 ,  C30B017/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B11/002 ,  C30B11/00 ,  C30B29/12 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1092

摘要： An object of the present invention is to provide a production apparatus and method of a fluoride crystal, and a crucible for the growth capable of efficiently eliminating impurities and a scavenger remained in the crystal so as to produce a fluoride crystal with a high transmissivity. A crucible divided into a plurality to have multi-stages is used for refining a material in the material refining process by adding a scavenger in the material. Further, a degassing hole was provided to the side wall portion of the crucible. A crucible of the present invention has at least two degassing holes at the side wall portion. Further, a crucible of the present invention has a connecting hole at the center part of the bottom face with at least two degassing holes in the side wall portion.

摘要翻译： 本发明的目的是提供一种氟化物晶体的制造装置和方法，以及用于能够有效地除去杂质的生长用坩埚和残留在晶体中的清除剂，以产生具有高透射率的氟化物晶体。 通过在材料中添加清除剂，将分为多级的具有多级的坩埚用于精炼材料精炼过程中的材料。 此外，在坩埚的侧壁部分设置脱气孔。 本发明的坩埚在侧壁部分具有至少两个脱气孔。 此外，本发明的坩埚在底面的中央部具有连接孔，在侧壁部具有至少两个脱气孔。

公开(公告)号：US20030190796A1

公开(公告)日：2003-10-09

申请号：US10118350

申请日：2002-04-09

发明人： Joseph E. Geusic

IPC分类号： H01L021/20 ,  C30B009/00

CPC分类号： G02B6/1225 ,  B82Y20/00 ,  C30B29/60 ,  C30B33/00 ,  Y10T74/1544 ,  Y10T74/1844 ,  Y10T74/18928

摘要： A surface-transformation method of forming regions of a second material in a first solid material to control the properties of the first solid material is disclosed. The regions of the second material are formed in the first solid material by drilling holes to a predefined depth and at a predefined lattice position. The holes in the first solid material are then filled with a second material and then the first and second materials are heated to a temperature close to the melting point of the first solid material to spontaneously form the regions filled with the second material and embedded in the first solid material at the desired location. A liquid-phase immersion method or a deposition method may be employed to fill the holes in the first solid material.

摘要翻译： 公开了一种在第一固体材料中形成第二材料的区域以控制第一固体材料的性能的表面变换方法。 第二材料的区域通过将预定深度和预定的晶格位置钻孔而形成在第一固体材料中。 然后将第一固体材料中的孔用第二材料填充，然后将第一和第二材料加热至接近第一固体材料的熔点的温度，以自发形成填充有第二材料的区域，并将其嵌入 在所需位置的第一固体材料。 可以采用液相浸渍法或沉积法填充第一固体材料中的孔。

公开(公告)号：US20030066477A1

公开(公告)日：2003-04-10

申请号：US10113449

申请日：2002-03-28

发明人： Michele M. L. Meyer-Fredholm ,  Michael A. Pell

IPC分类号： C30B009/00 ,  C30B011/00 ,  C30B017/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B11/002 ,  C30B11/00 ,  C30B29/12

摘要： The object of the present invention is a process of preparing an optical fluoride crystal containing barium fluoride , which comprises: loading a crucible with a barium fluoride starting material crystal feedstock which contains at least one oxide as impurity, and an effective and non-excess amount of at least one fluorinating agent which is solid at ambient temperature, melting said mixture within said crucible, growing the crystal, by controlled cooling of the molten mixture, controlled cooling of said crystal to ambient temperature, recovering said crystal; and which is characterised in that the oxide(s) resulting from the reaction between said fluorinating agent(s) and said oxide(s), the impurity or impurities, can be discharged from said crucible, in view of the intrinsic permeability of the material constituting it. Said process is particularly adapted for preparing 157 nm transmitting lithography excimer laser optical fluoride crystals in graphite crucibles.

摘要翻译： 本发明的目的是制备含氟化钡的氟化物晶体的方法，该方法包括：将含有至少一种作为杂质的氧化物的氟化钡原料晶体原料的坩埚装入坩埚中，并且将有效和不超过量 的至少一种氟化剂，其在环境温度下是固体，在所述坩埚内熔化所述混合物，通过控制冷却所述熔融混合物使所述晶体生长，将所述晶体控制冷却至环境温度，回收所述晶体; 其特征在于，考虑到材料的固有渗透性，从所述氟化剂和所述氧化物之间的反应产生的氧化物，杂质或杂质可以从所述坩埚中排出 构成它。 所述方法特别适用于在石墨坩埚中制备157nm透射光刻准分子激光氟化物晶体。

公开(公告)号：US20030037721A1

公开(公告)日：2003-02-27

申请号：US10190001

申请日：2002-07-03

发明人： Xiao Gordon Liu ,  Wei Guo Liu

IPC分类号： C30B009/00 ,  C30B011/00 ,  C30B017/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B27/00 ,  C30B11/00 ,  C30B11/002 ,  C30B11/04 ,  C30B11/12 ,  C30B29/42 ,  C30B35/002 ,  Y10T117/1092

摘要： Group III-V, II-VI and related monocrystalline compounds are grown with a rigid support of a sealed ampoule, carbon doping and resistivity control, and thermal gradient control in a crystal growth furnace. A support cylinder provides structural support for the combined sealed ampoule crucible assembly, while low-density insulating material inside the support cylinder deters convection and conduction heating. Radiation channels penetrating the low-density material provide pathways for radiation heating into and out of the seed well and transition regions of the crystal growth crucible. A hollow core in the insulation material directly beneath the seed well provides cooling in the center of the growing crystal, which enables uniform, level growth of the crystal ingot and a flat crystal-melt interface which results in crystal wafers with uniform electrical properties.

摘要翻译： III-V族，II-VI族和相关单晶化合物在密封的安瓿，碳掺杂和电阻率控制的刚性支持物和晶体生长炉中的热梯度控制下生长。 支撑筒为组合的密封安瓿坩埚组件提供结构支撑，而支撑筒内部的低密度绝缘材料阻止对流和传导加热。 穿透低密度材料的辐射通道提供辐射加热进入和离开晶体生长坩埚的种子井和过渡区域的途径。 直接位于种子井下面的绝缘材料中的中空芯在生长晶体的中心提供冷却，这使得晶锭的均匀高度生长和平坦的晶体 - 熔融界面，这导致具有均匀电性能的晶体晶片。