专利检索 cpc:"C01G9/08" 第 1 页

1.

发明授权
Quantum dot, display panel and display device 有权

公开(公告)号：US11999632B2

公开(公告)日：2024-06-04

申请号：US17534328

申请日：2021-11-23

申请人： LG Display Co., Ltd.

发明人： KyungKook Jang , DaBin Kim , SeungRyong Lee

IPC分类号： C09K11/56 , C01G9/00 , C01G9/08 , C01G15/00 , C09K11/02 , C09K11/70 , C09K11/88 , G02B5/20 , H01L33/50 , H10K59/38 , B82Y20/00 , B82Y35/00 , B82Y40/00

CPC分类号： C01G9/08 , C01G9/006 , C01G15/00 , C09K11/565 , C09K11/70 , C09K11/883 , G02B5/20 , H01L33/502 , H10K59/38 , B82Y20/00 , B82Y35/00 , B82Y40/00 , C01P2004/64 , C01P2006/60 , G02B2207/101 , H01L2933/0041

摘要： A quantum dot includes a core, a first shell and a second shell. The core includes a group III-V compound. The first shell includes a second semiconductor nanocrystal. The second semiconductor nanocrystal includes zinc, selenium and a dopant including tellurium. The second shell includes a third semiconductor nanocrystal. The third semiconductor nanocrystal includes a II-VI compound.

2.

发明授权
Method for preparing quantum dots light-emitting diode 有权

公开(公告)号：US11997911B2

公开(公告)日：2024-05-28

申请号：US17419694

申请日：2019-09-17

申请人： TCL TECHNOLOGY GROUP CORPORATION

发明人： Jie Zhang , Chaoyu Xiang

IPC分类号： H10K71/00 , C01G9/08 , C01G11/00 , C09K11/56 , C09K11/88 , H10K50/115 , B82Y20/00 , B82Y40/00 , H10K50/15 , H10K50/16

CPC分类号： H10K71/00 , C01G9/08 , C01G11/00 , C09K11/565 , C09K11/883 , H10K50/115 , B82Y20/00 , B82Y40/00 , C01P2004/64 , C01P2006/60 , H10K50/157 , H10K50/167

摘要： The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.

3.

发明授权
Process for the purification of waste materials or industrial by-products comprising chlorine 有权

公开(公告)号：US11850641B2

公开(公告)日：2023-12-26

申请号：US16641966

申请日：2018-09-04

申请人： amaTEQ Holding GmbH

发明人： Alexander Kehrmann , Jan Hohlmann , Carsten Nass , Gerhard Auer , Christian Adam , Christopher Hamann , Dirk Stolle

IPC分类号： B09B3/40 , C01G9/02 , C01G9/04 , C01G9/08 , C04B7/36 , C05D9/00 , C21B15/00 , C21C5/56 , C22B1/00 , C22B1/08 , C22B7/00 , C22B7/02 , C22B13/02 , C22B19/30 , C25C1/16

CPC分类号： B09B3/40 , C01G9/02 , C01G9/04 , C01G9/08 , C04B7/365 , C05D9/00 , C21B15/006 , C21C5/565 , C22B1/005 , C22B1/08 , C22B7/002 , C22B7/02 , C22B13/025 , C22B19/30 , C25C1/16 , C21B2200/00

摘要： The present application relates to a process for the purification of waste materials or industrial by-products, the process comprising the steps of: a) Preparing a composition (C) by blending or mixing waste materials or industrial by-products comprising chlorine (B) with one or more materials comprising heavy metals (HM) b) Reacting (B) and (HM) by thermal treatment of (C) c) Separating evaporated heavy metal chloride compounds (HMCC) d) Obtaining a solid material after the thermal treatment step.

4.

发明申请
METHOD OF PREPARING METAL CHALCOGENIDE NANOPARTICLES AND METHOD OF PRODUCING LIGHT ABSORPTION LAYER THIN FILM BASED THEREON 审中-公开

公开(公告)号：US20190259889A1

公开(公告)日：2019-08-22

申请号：US16396898

申请日：2019-04-29

申请人： LG CHEM, LTD.

发明人： Eun Ju Park , Seokhee Yoon , Seokhyun Yoon , Hosub Lee

IPC分类号： H01L31/032 , H01L31/18 , C01G19/00 , C01G9/08 , C09D11/52 , H01L31/0224

CPC分类号： H01L31/0324 , C01G9/08 , C01G19/006 , C01P2002/72 , C01P2002/74 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C01P2006/40 , C09D11/52 , H01L31/022425 , H01L31/1864

摘要： Disclosed are a single-source precursor for synthesizing metal chalcogenide nanoparticles for producing a light absorption layer of solar cells comprising a Group VI element linked as a ligand to any one metal selected from the group consisting of copper (Cu), zinc (Zn) and tin (Sn), metal chalcogenide nanoparticles produced by heat-treating at least one type of the single-source precursor, a method of preparing the same, a thin film produced using the same and a method of producing the thin film.

5.

发明申请
CHALCOGENIDE MATERIALS, CHALCOGENIDE-BASED MATERIALS, AND METHODS OF MAKING AND USING THE SAME 审中-公开

公开(公告)号：US20180244534A1

公开(公告)日：2018-08-30

申请号：US15558984

申请日：2016-03-15

申请人： Board of Regents of the Nevada System of Higher Education, on behalf of the University of Nevada,

发明人： Vaidyanathan Subramanian , Pawan Pathak , Satyajit Gupta

IPC分类号： C01G11/02 , C01G21/21 , C25B1/00 , C25B11/04

CPC分类号： C01G11/02 , C01B19/007 , C01G3/12 , C01G9/08 , C01G21/21 , C01P2002/72 , C01P2002/74 , C01P2002/84 , C01P2004/03 , C01P2004/04 , C01P2006/40 , C25B1/003 , C25B11/0405 , C25B11/0447 , H01L31/03926 , H01L31/1828 , Y02E10/543 , Y02P20/134

摘要： Disclosed herein are embodiments of chalcogenide materials and chalcogenide-based materials that exhibit improved light-driven properties and performance in comparison to conventional materials. Also disclosed herein are embodiments of cost- and time-efficient methods of making such materials.

6.

发明授权
Metal sulphide-based composite photocatalyst for producing hydrogen 有权

公开(公告)号：US09993807B2

公开(公告)日：2018-06-12

申请号：US14411827

申请日：2013-06-19

申请人： IFP Energies nouvelles , CNRS

发明人： Antoine Fecant , Denis Uzio , Dina Lofficial , Eric Puzenat , Elodie Blanco , Pavel Afanasiev , Gilles Berhault

IPC分类号： B01J23/06 , B01J23/28 , B01J23/60 , B01J23/883 , B01J23/885 , B01J27/04 , C01G39/06 , C01B3/04 , C01G9/08 , B01J37/03 , B01J27/053 , B01J35/00 , B82Y30/00 , B01J19/12 , B01J23/46 , B01J27/051 , B01J35/02 , B01J37/02 , B01J37/06 , B01J37/20 , B01J37/34

CPC分类号： B01J27/04 , B01J19/123 , B01J23/462 , B01J27/051 , B01J27/053 , B01J35/0013 , B01J35/004 , B01J35/006 , B01J35/026 , B01J37/0221 , B01J37/031 , B01J37/06 , B01J37/20 , B01J37/345 , B82Y30/00 , C01B3/04 , C01B3/042 , C01G9/08 , C01G39/06 , C01P2002/52 , C01P2004/64 , C01P2006/12 , Y02E60/364

摘要： The invention concerns a composition comprising a mixture of zinc sulphide (ZnS) and molybdenum sulphide (MoSx), in which the Mo/Zn molar ratio is in the range 0.01 to 1.9. The invention also pertains to a process for its preparation as well as to its application in photocatalysis and more particularly to its application in photocatalysis for the production of dihydrogen from water (H2O) and/or hydrogen sulphide (H2S) and/or any other source of protons in the presence of a source emitting in the ultraviolet and/or visible spectrum.

7.

发明申请
METHOD OF PREPARING METAL CHALCOGENIDE NANOPARTICLES AND METHOD OF PRODUCING LIGHT ABSORPTION LAYER THIN FILM BASED THEREON 审中-公开

公开(公告)号：US20170288075A1

公开(公告)日：2017-10-05

申请号：US15508825

申请日：2015-10-27

申请人： LG CHEM, LTD.

发明人： Eun Ju PARK , Seokhee YOON , Seokhyun YOON , Hosub LEE

IPC分类号： H01L31/032 , H01L31/18 , C09D11/52 , H01L31/0224 , C01G9/08 , C01G19/00

CPC分类号： H01L31/0324 , C01G9/08 , C01G19/006 , C01P2002/72 , C01P2002/74 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/62 , C01P2004/64 , C01P2004/84 , C01P2006/40 , C09D11/52 , H01L31/022425 , H01L31/1864

摘要： Disclosed are a single-source precursor for synthesizing metal chalcogenide nanoparticles for producing a light absorption layer of solar cells comprising a Group VI element linked as a ligand to any one metal selected from the group consisting of copper (Cu), zinc (Zn) and tin (Sn), metal chalcogenide nanoparticles produced by heat-treating at least one type of the single-source precursor, a method of preparing the same, a thin film produced using the same and a method of producing the thin film.

8.

发明授权
Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles 有权

公开(公告)号：US09768333B2

公开(公告)日：2017-09-19

申请号：US14246632

申请日：2014-04-07

申请人： UT-Battelle, LLC

发明人： Tommy J. Phelps , Robert J. Lauf , Ji-Won Moon , Adam Justin Rondinone , Lonnie J. Love , Chad Edward Duty , Andrew Stephen Madden , Yiliang Li , Ilia N. Ivanov , Claudia Jeanette Rawn

IPC分类号： C12P3/00 , H01L31/032 , C01B17/20 , C01B19/00 , C01G9/08 , C01G11/02 , C01G15/00 , C01G19/00 , H01L31/0352

CPC分类号： H01L31/0326 , C01B17/20 , C01B19/007 , C01G9/08 , C01G11/02 , C01G15/006 , C01G19/006 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2004/04 , C01P2006/40 , C12P3/00 , H01L31/035218 , Y10T428/2982

摘要： The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.