公开(公告)号：US06299682B1

公开(公告)日：2001-10-09

申请号：US09658488

申请日：2000-09-08

申请人： Saburo Wakita ,  Akira Mitsuhashi ,  Yoshinobu Nakada ,  Jun-ichi Sasaki ,  Yuhji Ishiwari

发明人： Saburo Wakita ,  Akira Mitsuhashi ,  Yoshinobu Nakada ,  Jun-ichi Sasaki ,  Yuhji Ishiwari

IPC分类号： C30B1314

CPC分类号： C30B29/06 ,  C30B11/003 ,  Y10S164/06

摘要： A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.

摘要翻译： 一种制造具有定向凝固结构的硅锭的方法，包括以下步骤：将硅原料放入通过将冷却板安装在地板下加热器上构成的熔化装置的坩埚中，安装具有大横截面积的坩埚 在冷却板上，在坩埚上方提供顶部加热器，并用绝热体围绕坩埚的周边; 通过使电流流过地板加热器和塔顶加热器来热熔硅原料; 在硅原料完全熔化之后，通过停止通过地板下加热器的电流来冷却坩埚的底部以形成熔融硅; 通过使惰性气体流过冷却板来冷却坩埚的底部; 以及通过间歇地或连续地减少通过塔顶加热器的电流来间歇地或连续地降低塔顶加热器的温度，以及用于生产硅锭的装置。

公开(公告)号：US06669778B2

公开(公告)日：2003-12-30

申请号：US10107283

申请日：2002-03-26

申请人： Michele M. L. Meyer-Fredholm

发明人： Michele M. L. Meyer-Fredholm

IPC分类号： C30B1314

CPC分类号： C30B11/002 ,  C30B11/00 ,  C30B29/12

摘要： The object of the present invention is a process of preparing a crystal, which comprises: loading a crucible with a mixture of the appropriate starting material which contains at least one oxide as impurity, and an effective and non-excess amount of at least one fluorinating agent which is solid at ambient temperature, melting said mixture within said crucible, growing the crystal, by controlled cooling of the molten mixture, controlled cooling of said crystal to ambient temperature, recovering said crystal; and which is characterized in that the oxide(s) resulting from the reaction between said fluorinating agent(s) and said oxide(s), the impurity or impurities, can be discharged from said crucible, in view of the dimensions of said crucible and of the intrinsic permeability of the material constituting it. Said process is particularly adapted for preparing (mono)crystals of CaF2 in graphite crucibles.

摘要翻译： 本发明的目的是制备晶体的方法，其包括：将坩埚与包含至少一种作为杂质的氧化物的合适原料的混合物和有效和不过量的至少一种氟化物 在环境温度下为固体，在所述坩埚内熔化所述混合物，通过熔融混合物的受控冷却使晶体生长，将所述晶体控制冷却至环境温度，回收所述晶体; 其特征在于，考虑到所述坩埚的尺寸，从所述氟化剂和所述氧化物之间的反应产生的氧化物，所述杂质或杂质可以从所述坩埚排出，并且 的构成材料的固有渗透性。 所述方法特别适用于在石墨坩埚中制备CaF2的（单）晶体。

公开(公告)号：US06334897B1

公开(公告)日：2002-01-01

申请号：US09424794

申请日：1999-11-30

申请人： Toshiaki Asahi ,  Keiji Kainosho ,  Tatsuya Nozaki ,  Kenji Sato

发明人： Toshiaki Asahi ,  Keiji Kainosho ,  Tatsuya Nozaki ,  Kenji Sato

IPC分类号： C30B1314

CPC分类号： C30B29/46 ,  C30B11/00 ,  C30B11/002 ,  C30B11/003 ,  C30B29/40 ,  C30B29/48

摘要： A method for producing a compound semiconductor single crystal, comprises the steps of: using a crucible having a bottom, a cylindrical shape, a diameter increasing portion having a reversed conical shape in a lower end side of the crucible, and a set portion for a seed crystal in a center of the bottom of the diameter increasing portion; setting a seed crystal in the seed crystal set portion of the crucible; putting a raw material of the compound semiconductor and an encapsulating material into the crucible; enclosing the crucible in an inner container; thereafter setting the inner container in a vertical type furnace; heating the raw material and the encapsulating material by a heating means to melt; and solidifying the obtained raw material melt from the seed crystal toward an upper side with annealing the raw material melt from a lower side to grow a single crystal of the compound semiconductor; wherein a rate of crystal growth at the diameter increasing portion of the crucible is made not less than 20 mm/hr during the crystal is grown.

摘要翻译： 一种制备化合物半导体单晶的方法，包括以下步骤：使用具有底部，圆筒形状的坩埚，在坩埚的下端侧具有倒锥形的直径增加部分，以及用于 种子晶体在直径增加部分的底部的中心; 将晶种设置在坩埚的晶种组合部分中; 将化合物半导体的原料和封装材料放入坩埚中; 将坩埚封闭在内部容器中; 然后将内容器设置在立式炉中; 通过加热装置加热原料和包封材料以熔化; 并且通过从下侧退火原料熔体而将获得的原料熔体从晶种固化到上侧，以生长化合物半导体的单晶; 其中在晶体生长期间，在坩埚的直径增加部分处的晶体生长速率不小于20mm / hr。