公开(公告)号：US08154947B2

公开(公告)日：2012-04-10

申请号：US13239846

申请日：2011-09-22

申请人： Frederick A. Ware ,  Lawrence Lai ,  Chad A. Bellows ,  Wayne S. Richardson

发明人： Frederick A. Ware ,  Lawrence Lai ,  Chad A. Bellows ,  Wayne S. Richardson

IPC分类号： G11C8/14 ,  G06F5/76

CPC分类号： G11C8/10 ,  G11C8/12 ,  G11C8/16

摘要： A memory system includes a master device, such as a graphics controller or processor, and an integrated circuit memory device operable in a dual column addressing mode. The integrated circuit memory device includes an interface and column decoder to access a row of storage cells or a page in a memory bank. During a first mode of operation, a first row of storage cells in a first memory bank is accessible in response to a first column address. During a second mode of operation, a first plurality of storage cells in the first row of storage cells is accessible in response to a second column address during a column cycle time interval. A second plurality of storage cells in the first row of storage cells is accessible in response to a third column address during the column cycle time interval. The first and second pluralities of storage cells are concurrently accessible from the interface.

摘要翻译： 存储器系统包括主设备，诸如图形控制器或处理器，以及以双列寻址模式可操作的集成电路存储器件。 集成电路存储器件包括一个接口和列解码器，以访问一行存储单元或存储体中的一页。 在第一操作模式期间，响应于第一列地址可访问第一存储体中的第一行存储单元。 在第二操作模式期间，响应于列周期时间间隔期间的第二列地址，可访问第一行存储单元中的第一多个存储单元。 响应于列周期时间间隔期间的第三列地址，可访问第一行存储单元中的第二多个存储单元。 第一和第二多个存储单元可以从该接口同时访问。