公开(公告)号：US06762924B2

公开(公告)日：2004-07-13

申请号：US10321782

申请日：2002-12-17

申请人： Pierre C. Fazan ,  Gurtej S. Sandhu

发明人： Pierre C. Fazan ,  Gurtej S. Sandhu

IPC分类号： H01G101

CPC分类号： H01L27/11502 ,  H01L21/76849 ,  H01L21/7687 ,  H01L21/76889 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode having a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant. The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide/nitride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. The barrier layer is then formed in the recess. The process is continued with a formation of a second insulative layer, a potion of which is removed to form an opening exposing a portion of the barrier layer. An oxidation resistant conductive layer is deposited in the recess and forms at least a portion the storage node electrode of the capacitor. Next a dielectric layer having a high dielectric constant is formed to overly the storage node electrode and a cell plate electrode is fabricated to overly the dielectric layer.

摘要翻译： 本发明是一种存储单元电容器和一种用于形成具有存储节点电极的存储单元电容器的方法，所述存储节点电极具有介于导电插塞和抗氧化层之间的阻挡层。 厚的绝缘层在具有高介电常数的介电层的沉积和退火期间保护阻挡层的侧壁。 该方法包括在诸如氧化物或氧化物/氮化物的绝缘材料的厚层中形成导电插塞。 导电插塞从厚绝缘层的平坦化顶表面凹陷。 然后在凹部中形成阻挡层。 该过程继续形成第二绝缘层，其一部分被去除以形成暴露阻挡层的一部分的开口。 在凹部中沉积抗氧化导电层，并形成电容器的存储节点电极的至少一部分。 接下来，形成具有高介电常数的电介质层，以覆盖存储节点电极，并且将电池板电极制造成过度的电介质层。