公开(公告)号：US20250069956A1

公开(公告)日：2025-02-27

申请号：US18456309

申请日：2023-08-25

Applicant: Carl Zeiss SMT GmbH

Inventor： Brett Lewis ,  John Notte ,  Md Mahbubur Shakil ,  Alexander Lombardi ,  Hans-Michael Solowan

IPC: H01L21/66 ,  H01J37/26 ,  H01J37/30 ,  H01L21/263

Abstract: An ion beam system capable of providing increased secondary electron yield is provided. The increase of a secondary electron yield can be achieved by utilizing, during ion beam scanning, a combination of at least two individual gases adapted to material compositions present in a semiconductor wafer or lithography mask. The system and method can be used, for example, for inspection, circuit edit or repair of semiconductor wafers or lithography masks.

公开(公告)号：US20250069874A1

公开(公告)日：2025-02-27

申请号：US18944854

申请日：2024-11-12

Applicant: Arrowhead Center, Inc.

Inventor： Gary A. Eiceman ,  Jennifer J. Randall ,  Gyoungil Lee ,  Alexandre Tarassov

IPC: H01J49/00 ,  G01N33/02 ,  H01J49/10

Abstract: An apparatus for detecting a substance comprising a direct analysis in real time apparatus; a neutral excluder; a mass spectrometer; and a vessel in. The apparatus may also comprise a separator, a gas, an alcohol, a filter, and a pump. The apparatus may also comprise electrodes in communication with the direct analysis in real time apparatus and the neutral excluder. A method for detecting a substance comprising contacting the substance with a direct analysis in real time apparatus ion stream; forming an ion and a neutral particle; flowing the ion and the neutral particle into a neutral excluder; contacting the ion and the neutral particle with a gas; and flowing the ion into a mass spectrometer.

公开(公告)号：US20250069872A1

公开(公告)日：2025-02-27

申请号：US18677912

申请日：2024-05-30

Applicant: Institute of Geology and Geophysics, Chinese Academy of Sciences

Inventor： Xuhang ZHANG ,  Fei SU ,  Huaiyu HE

IPC: H01J49/00

Abstract: The disclosure discloses a method for calibrating a mass discrimination effect of a neon isotope ratio, belonging to a field of isotope measurement. The following steps are provided: providing N kinds of standard gases with different gas semaphores, and respectively testing 20Ne and 22Ne in the N kinds of standard gases (air) by using a mass spectrometer to obtain N data sets; obtaining a functional equation (20Ne/22Ne)air=20Ne/22Ne=A(22Ne)+B from the N data sets by a mathematical fitting method; providing a test sample, and testing 20Nesample and 22Nesample in the sample by a mass spectrometer; making 22Ne equal to 22Nesample, obtaining a functional equation (20Ne/22Ne)air(sample)=A(22Nesample)+B; obtaining a mass discrimination factor according to D=(20Ne/22Ne)air(sample)/(20Ne/22Ne)standard; obtaining a real value of the sample according to (20Ne/22Ne)sample real=(20Nesample/22Nesample)/D.

公开(公告)号：US20250069871A1

公开(公告)日：2025-02-27

申请号：US18597432

申请日：2024-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghwa LEE ,  Jawon KO ,  Taijo JEON ,  Yunsong JEONG

IPC: H01J37/32 ,  G01J3/28 ,  H01L21/66

Abstract: A sensor apparatus for analyzing plasma in a plasma processing chamber, includes: a first substrate; a second substrate on the first substrate; and a plurality of sensors between the first substrate and the second substrate, the plurality of sensors being spaced apart from each other, wherein each of the plurality of sensors includes: (a) a sensing assembly that includes: (i) a wavelength selector on which light emitted from the plasma is incident and that is configured to separate wavelengths of a spectrum of the light, and (ii) a spectrometer that is optically connected to the wavelength selector and that is configured to detect the spectrum for each separated wavelength; and (b) a battery connected to the sensing assembly and configured to supply first power to the sensing assembly.

公开(公告)号：US20250069870A1

公开(公告)日：2025-02-27

申请号：US18940761

申请日：2024-11-07

Applicant: Hamamatsu Photonics K.K. ,  Energetiq Technology, Inc.

Inventor： Stephen F. Horne ,  Kosuke Saito ,  Wolfram Neff ,  Robert M. Grzybinski ,  Michael J. Roderick

IPC: H01J37/32

Abstract: A plasma chamber for a UV light source includes a plasma generation region that defines a plasma confinement region. A port is positioned adjacent to a side of the plasma generation region that allows generated light to pass out of the chamber. A high voltage region is coupled to the plasma generation region. A grounded region is coupled to the high voltage region that defines an outer surface configured to be coupled to the ground and is dimensioned for receiving a surrounding inductive core. A width of the high voltage region is greater than the width of the grounded region.

公开(公告)号：US20250069867A1

公开(公告)日：2025-02-27

申请号：US18279460

申请日：2022-05-18

Applicant: Hitachi High-Tech Corporation

Inventor： Tzu Wei TSENG ,  Akito KOCHI ,  Kenji IMAMOTO ,  Yuzuru YAMAMOTO

IPC: H01J37/32

Abstract: A plasma processing apparatus capable of reducing an error in operation by automating exhaust via a gas pipe, including a first valve disposed between a gas cylinder and a mass flow controller; a second valve configured to exhaust a gas filled from a dry pump side; a third valve disposed downstream of the mass flow controller; a fourth valve configured to exhaust a gas filled in a third valve side; a first pressure gauge provided between the first valve and the mass flow controller; a second pressure gauge disposed between a dry pump and a turbo molecular pump; and a control device configured to open the second valve and the fourth valve to exhaust the filled gas and monitor until a pressure difference between the first pressure gauge and the second pressure gauge becomes equal, and then closing the second valve and the fourth valve; and a repeating.

公开(公告)号：US20250069862A1

公开(公告)日：2025-02-27

申请号：US18937082

申请日：2024-11-05

Applicant: Tokyo Electron Limited

Inventor： Nobutaka SASAKI ,  Shin MATSUURA ,  Gyeong min PARK ,  Toshiki AKAMA

IPC: H01J37/32 ,  H01L21/683

Abstract: A substrate support includes a base, a support portion, a first pin member, a second pin member and a driving unit. The base has a first surface on which an object to be supported is placed, a second surface opposite to the first surface, and a first through-hole. The support portion has a third surface in contact with the second surface, a fourth surface opposite to the third surface, and a second through-hole. The first pin member is stored in the first through-hole and a second pin member is stored in the second through-hole. The first through-hole is larger on the second surface side than on the first surface side, and/or the second through-hole is larger on the third surface side than on the fourth surface side.

公开(公告)号：US20250069859A1

公开(公告)日：2025-02-27

申请号：US18468790

申请日：2023-09-18

Applicant: Applied Materials, Inc.

Inventor： Edric H. TONG ,  Wei LIU ,  Victor CALDERON ,  Rene GEORGE ,  Dileep Venkata Sai VADLADI ,  Vladimir NAGORNY

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to high efficiency inductively coupled plasma sources and plasma processing apparatus. Specifically, embodiments relate to grids to improve plasma uniformity. In one embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. The grid is coupled to the grid support and disposed above the substrate support. The grid has a plurality of holes and one or more outer openings defined between a circumference of the grid and the grid support. Plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid towards the substrate support.

公开(公告)号：US20250069856A1

公开(公告)日：2025-02-27

申请号：US18726395

申请日：2022-12-27

Applicant: JUSUNG ENGINEERING CO., LTD.

Inventor： Chul Joo HWANG ,  In Seo YOO ,  Ji Hun LEE

IPC: H01J37/32

Abstract: The present inventive concept relates to an apparatus for processing a substrate, the apparatus comprising: a chamber which includes a lid on top; a first plate which is installed under the lid and in which a plurality of gas holes is formed; a second plate coupled to the first plate and including a plurality of gas holes that communicate with some of the plurality of gas holes of the first plate; and a distance adjustment part which is connected to the second plate, adjusts the distance between the lid and the first plate, and is connected to an RF power feeding line.

公开(公告)号：US20250069851A1

公开(公告)日：2025-02-27

申请号：US18944017

申请日：2024-11-12

Applicant: Tokyo Electron Limited

Inventor： Chishio KOSHIMIZU ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a bias power supply system. The substrate support is in the chamber and includes a central portion on which a substrate is placeable. The radio-frequency power supply generates source radio-frequency power. The bias power supply system respectively provides first electrical bias energy and second electrical bias energy to a first electrode and a second electrode. The first electrode is at least in the central portion of the substrate support. The second electrode is in an outer portion located outward from the central portion in a radial direction that is radial from a center of the central portion. The bias power supply system adjusts the first and second electrical bias energy to increase electric field strength above one of the central portion or the outer portion earlier than electric field strength above the other portion.