公开(公告)号：US20150279634A1

公开(公告)日：2015-10-01

申请号：US14242473

申请日：2014-04-01

Applicant: Applied Materials, Inc.

Inventor： Aniruddha PAL ,  Victor CALDERON ,  Martin Jeffrey SALINAS ,  Valentin N. TODOROW

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32633

Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

Abstract translation: 本发明的实施例通常提供在等离子体反应器中使用的冷却机构，其可以在等离子体工艺期间提供有效的温度控制。 在一个实施例中，设置在等离子体处理设备中的冷却机构包括形成在处理室中的线圈天线外壳，设置在线圈天线外壳中的线圈天线组件，设置在线圈天线外壳中的多个空气循环元件 线圈天线​​组件，以及设置在线圈天线外壳中并与线圈天线组件相邻的挡板。

公开(公告)号：US20250069859A1

公开(公告)日：2025-02-27

申请号：US18468790

申请日：2023-09-18

Applicant: Applied Materials, Inc.

Inventor： Edric H. TONG ,  Wei LIU ,  Victor CALDERON ,  Rene GEORGE ,  Dileep Venkata Sai VADLADI ,  Vladimir NAGORNY

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to high efficiency inductively coupled plasma sources and plasma processing apparatus. Specifically, embodiments relate to grids to improve plasma uniformity. In one embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. The grid is coupled to the grid support and disposed above the substrate support. The grid has a plurality of holes and one or more outer openings defined between a circumference of the grid and the grid support. Plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid towards the substrate support.

公开(公告)号：US20190198295A1

公开(公告)日：2019-06-27

申请号：US16286152

申请日：2019-02-26

Applicant: Applied Materials, Inc.

Inventor： Aniruddha PAL ,  Victor CALDERON ,  Martin Jeffrey SALINAS ,  Valentin N. TODOROW

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32633

Abstract: Embodiments of the invention generally provide a cooling mechanism utilized in a plasma reactor that may provide efficient temperature control during a plasma process. In one embodiment, a cooling mechanism disposed in a plasma processing apparatus includes a coil antenna enclosure formed in a processing chamber, a coil antenna assembly disposed in the coil antenna enclosure, a plurality of air circulating elements disposed in the coil antenna enclosure adjacent to the coil antenna assembly, and a baffle plate disposed in the coil antenna enclosure below and adjacent to the coil antenna assembly.

公开(公告)号：US20240055265A1

公开(公告)日：2024-02-15

申请号：US17886269

申请日：2022-08-11

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Zhiming JIANG ,  Jingmin LENG ,  Victor CALDERON ,  Mahesh RAMAKRISHNA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L29/66 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/67207 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/6653 ,  H01L29/66553 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01L29/42392

Abstract: A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.

公开(公告)号：US20240290585A1

公开(公告)日：2024-08-29

申请号：US18113509

申请日：2023-02-23

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Eric R. RIESKE ,  Victor CALDERON ,  Mahesh RAMAKRISHNA ,  Michael P. KAMP ,  Dongming IU ,  Edward T. XIA ,  Eric T. TRAN

IPC: H01J37/32 ,  H01L21/768

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/76886 ,  H01J37/32357 ,  H01J37/32743 ,  H01J2237/1825 ,  H01J2237/336

Abstract: A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

公开(公告)号：US20240266146A1

公开(公告)日：2024-08-08

申请号：US18106981

申请日：2023-02-07

Applicant: Applied Materials, Inc.

Inventor： Christopher S. OLSEN ,  Rene GEORGE ,  Victor CALDERON

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J2237/15 ,  H01J2237/3323

Abstract: A process chamber is provided including a chamber body disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support in the process volume; a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector positioned at least partially in the process volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom. The one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume.