Abstract:
A particle-optical apparatus is proposed as well as a method for operating the same. The particle-optical apparatus provides a magnetic field for deflecting charged particles of a beam of charged particles and comprises a body of a material with a permeability number around which a current conductor at least partially engages and a temperature-adjusting unit -for adjusting a temperature of the magnetic-flux-carrying body substantially to a nominal temperature. A relative variation of the permeability number relative to a width of a temperature range is to be smaller than a limit value a, wherein a is preferably smaller than 3null10null3Knull1. In particular, the nominal temperature is at an extremum of a temperature dependence of the permeability number. Preferably, such a particle-optical apparatus can be employed in a microscopy or a lithography apparatus.
Abstract translation:提出了一种粒子光学装置及其操作方法。 颗粒光学装置提供用于偏转带电粒子束的带电粒子的磁场,并且包括具有至少部分接合的电流导体周围的渗透性数量的材料体和用于调节温度的温度调节单元 的磁通量载体基本上达到标称温度。 渗透率数据相对于温度范围的宽度的相对变化应小于极限值a,其中a优选小于3.10 -3 K -1。 特别地,标称温度是导磁率值的温度依赖性的极值。 优选地,这样的粒子光学装置可以用在显微镜或光刻设备中。
Abstract:
A swinging objective retarding immersion lens system and method therefore which provide a low voltage electron beam with high beam current, relatively high spatial resolution, a relative large scan field, and high signal collection efficiency. The objective lens includes a magnetic lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, an electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen; a deflection system including a plurality of deflection units situated along the beam axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the magnetic lens; and a annular detection unit with a relatively small aperture, located underneath the primary beam define aperture, to capture secondary electron (SE) and backscattered electrons (BSE).
Abstract:
A device for influencing an electron beam, especially a deflector unit for an electron beam lithography machine, comprises a plurality of coil formers (12b) each with a bore (16) defining a passage for the beam and each carrying coils (18, 19) operable to generate magnetic fields for deflecting the path of the beam when passing through the passage. Each former is made of a high-strength ceramic material having a high thermal conductivity and low coefficient of thermal expansion so that, with respect to a given output of heat by the associated coils during quasi-continuous operation for repeated beam deflection during pattern writing, the heat is dissipated at such a rate as to preclude thermal expansion of the coils and thus avoid distortion of the magnetic fields generated by the coils.
Abstract:
An electron beam exposure apparatus for exposing wafer with an electron beam, includes: the first electromagnetic lens system for making the electron beam incident substantially perpendicularly on the first plane be incident on the second plane substantially perpendicularly; the second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens for correcting rotation of the electron beam caused by the first electromagnetic lens system and/or the second electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer, that is to be irradiated with the electron beam; and a deflection-correction optical system for correcting deflection aberration caused by the deflection system.
Abstract:
The invention relates to a method for generating EUV radiation. Laser pulses are directed onto photoelectric transducer means (10), which generate pulses of electrically charged particles (6) as a result of the action of the laser pulses. The electrically charged particles are accelerated in an electric field and directed onto a target (4), in such a way that the target generates a plasma, which emits EUV radiation, as a result of the action of the electrically charged particles.