公开(公告)号：US08304317B2

公开(公告)日：2012-11-06

申请号：US12648802

申请日：2009-12-29

申请人： Yiming Gu ,  James Walter Blatchford

发明人： Yiming Gu ,  James Walter Blatchford

IPC分类号： H01L21/8324

CPC分类号： H01L21/28123 ,  H01L21/32139

摘要： A method of patterning a plurality of polysilicon structures includes forming a polysilicon layer over a semiconductor body, and patterning the polysilicon layer to form a first polysilicon structure using a first patterning process that reduces line-edge roughness (LER). The method further includes patterning the polysilicon layer to form a second polysilicon structure using a second patterning process that is different from the first patterning process after performing the first patterning process.

摘要翻译： 图案化多个多晶硅结构的方法包括在半导体本体上形成多晶硅层，并使用减少线边缘粗糙度（LER）的第一图案化工艺来图案化多晶硅层以形成第一多晶硅结构。 该方法还包括使用在执行第一图案化工艺之后与第一图案化工艺不同的第二图案化工艺来图案化多晶硅层以形成第二多晶硅结构。

公开(公告)号：US07897498B2

公开(公告)日：2011-03-01

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/336 ,  H01L21/8324 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。