公开(公告)号：US07250374B2

公开(公告)日：2007-07-31

申请号：US10881456

申请日：2004-06-30

申请人： Glenn Gale ,  Joseph T. Hillman ,  Gunilla Jacobson ,  Bentley Palmer

发明人： Glenn Gale ,  Joseph T. Hillman ,  Gunilla Jacobson ,  Bentley Palmer

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31133 ,  H01L21/31111

摘要： A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical CO2 processing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical CO2 processing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

摘要翻译： 一种用于在膜去除系统中处理衬底的方法和系统。 该方法包括将基板设置在膜去除系统的基板室中，其中基板具有在微特征的侧壁上包含电介质膜的微特征和覆盖电介质膜的一部分的光致抗蚀剂膜，并且执行 使用超临界CO 2 2处理以去除未被光致抗蚀剂膜覆盖的电介质膜的部分的第一膜去除工艺。 在第一膜去除工艺之后，可以进行使用超临界CO 2 2处理的第二膜去除工艺以除去光致抗蚀剂膜。 或者，可以使用湿法处理来执行第一膜去除工艺或第二膜去除工艺中的一种。

公开(公告)号：US07897498B2

公开(公告)日：2011-03-01

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/336 ,  H01L21/8324 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US20080268655A1

公开(公告)日：2008-10-30

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/469 ,  H01L21/00

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US20060088959A1

公开(公告)日：2006-04-27

申请号：US11252212

申请日：2005-10-18

申请人： Glenn Gale

发明人： Glenn Gale

IPC分类号： H01L21/8232

CPC分类号： H01L21/28167 ,  H01L21/31111 ,  H01L21/6708 ,  H01L21/67086 ,  H01L22/26 ,  H01L29/513 ,  H01L29/517

摘要： A processing method of subjecting at least two stacked films, which comprise a first film and a second film of a target object to be processed, to a removing process by wet etching comprises bringing a first process liquid into contact with the first film of the target object, thereby etching the first film, determining whether the first film has been removed or not, switching the first process liquid to a second process liquid differing in a condition from the first process liquid when it has been determined that the first film has been removed, and bringing the second process liquid into contact with the second film, thereby etching the second film.

公开(公告)号：US20060003592A1

公开(公告)日：2006-01-05

申请号：US10881456

申请日：2004-06-30

申请人： Glenn Gale ,  Joseph Hillman ,  Gunilla Jacobson ,  Bentley Palmer

发明人： Glenn Gale ,  Joseph Hillman ,  Gunilla Jacobson ,  Bentley Palmer

IPC分类号： H01L21/467 ,  C23F1/00

CPC分类号： H01L21/31133 ,  H01L21/31111

摘要： A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film covering a portion the dielectric film, and performing a first film removal process using supercritical CO2 processing to remove the portion of the dielectric film not covered by the photoresist film. Following the first film removal process, a second film removal process using supercritical CO2 processing can be performed to remove the photoresist film. Alternately, wet processing can be used to perform one of the first film removal process or the second film removal process.

摘要翻译： 一种用于在膜去除系统中处理衬底的方法和系统。 该方法包括将基板设置在膜去除系统的基板室中，其中基板具有在微特征的侧壁上包含电介质膜的微特征和覆盖电介质膜的一部分的光致抗蚀剂膜，并且执行 使用超临界CO 2 2处理以去除未被光致抗蚀剂膜覆盖的电介质膜的部分的第一膜去除工艺。 在第一膜去除工艺之后，可以进行使用超临界CO 2 2处理的第二膜去除工艺以除去光致抗蚀剂膜。 或者，可以使用湿法处理来执行第一膜去除工艺或第二膜去除工艺中的一种。

公开(公告)号：US08043521B2

公开(公告)日：2011-10-25

申请号：US12230943

申请日：2008-09-08

申请人： Glenn Gale

发明人： Glenn Gale

IPC分类号： H01L21/308

CPC分类号： H01L21/28167 ,  H01L21/31111 ,  H01L21/6708 ,  H01L21/67086 ,  H01L22/26 ,  H01L29/513 ,  H01L29/517

摘要： A processing method of subjecting at least two stacked films, which comprise a first film and a second film of a target object to be processed, to a removing process by wet etching comprises bringing a first process liquid into contact with the first film of the target object, thereby etching the first film, determining whether the first film has been removed or not, switching the first process liquid to a second process liquid differing in a condition from the first process liquid when it has been determined that the first film has been removed, and bringing the second process liquid into contact with the second film, thereby etching the second film.

摘要翻译： 将包含第一膜和待处理目标物体的第二膜的至少两个堆叠膜经受湿蚀刻处理的处理方法包括使第一处理液与靶的第一膜接触 从而蚀刻第一膜，确定第一膜是否已经被去除，当确定第一膜已经被去除时，将第一处理液体切换到与第一处理液体不同的第二处理液体 并使第二处理液体与第二膜接触，从而蚀刻第二膜。

公开(公告)号：US20090011523A1

公开(公告)日：2009-01-08

申请号：US12230943

申请日：2008-09-08

申请人： Glenn GALE

发明人： Glenn GALE

IPC分类号： H01L21/302

CPC分类号： H01L21/28167 ,  H01L21/31111 ,  H01L21/6708 ,  H01L21/67086 ,  H01L22/26 ,  H01L29/513 ,  H01L29/517

摘要： A processing method of subjecting at least two stacked films, which comprise a first film and a second film of a target object to be processed, to a removing process by wet etching comprises bringing a first process liquid into contact with the first film of the target object, thereby etching the first film, determining whether the first film has been removed or not, switching the first process liquid to a second process liquid differing in a condition from the first process liquid when it has been determined that the first film has been removed, and bringing the second process liquid into contact with the second film, thereby etching the second film.

摘要翻译： 将包含第一膜和待处理目标物体的第二膜的至少两个堆叠膜经受湿蚀刻处理的处理方法包括使第一处理液与靶的第一膜接触 从而蚀刻第一膜，确定第一膜是否已经被去除，当确定第一膜已经被去除时，将第一处理液体切换到与第一处理液体不同的第二处理液体 并使第二处理液体与第二膜接触，从而蚀刻第二膜。