公开(公告)号：US08492212B2

公开(公告)日：2013-07-23

申请号：US13382448

申请日：2010-02-17

申请人： Tokuaki Kuniyoshi ,  Hidehito Kitakado ,  Tadayoshi Miyamoto ,  Kazuhide Tomiyasu ,  Sumio Katoh

发明人： Tokuaki Kuniyoshi ,  Hidehito Kitakado ,  Tadayoshi Miyamoto ,  Kazuhide Tomiyasu ,  Sumio Katoh

IPC分类号： H01L29/66765

CPC分类号： H01L29/78621 ,  G02F1/1368 ,  H01L29/4908 ,  H01L29/66765

摘要： Provided is a thin film transistor manufacture method by which a thin film transistor provided with LDD regions can be produced without increasing the number of photo masks used. An etching stopper layer (35) formed on a polycrystalline silicon film (26) of a TFT (10) is used not only as a mask to protect a channel region (27) when a source electrode and a drain electrode are formed by etching, but also as a mask when ions are implanted to form a source/drain regions (39). Thus, phosphorus, which is ion-implanted in the polycrystalline silicon film (26) to form the source/drain regions (39), is not implanted in the LDD region (38) and, accordingly, it is not necessary to additionally form a resist pattern to be used as a mask when ions are implanted.

摘要翻译： 提供了一种薄膜晶体管制造方法，通过该方法可以制造具有LDD区的薄膜晶体管，而不增加所使用的光掩模的数量。 形成在TFT（10）的多晶硅膜（26）上的蚀刻停止层（35）不仅用作掩模以在通过蚀刻形成源电极和漏电极时保护沟道区（27） 而且当离子被注入以形成源/漏区（39）时也作为掩模。 因此，离子注入多晶硅膜（26）中以形成源极/漏极区（39）的磷未被植入LDD区（38）中，因此不需要另外形成 当植入离子时用作掩模的抗蚀剂图案。