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公开(公告)号：US11629985B2
公开(公告)日：2023-04-18
申请号：US16912885
申请日：2020-06-26
发明人： Hao Pan , Hyunguk Jeon
摘要： The present disclosure provides a method for regulating an inert gas flow in a crystal pulling furnace, a method for preparing monocrystalline silicon, and monocrystalline silicon. The method for regulating an inert gas flow includes introducing the inert gas into a main furnace chamber of the crystal pulling furnace from an auxiliary furnace chamber of the crystal pulling furnace, and regulating a flow direction of the inert gas flow introduced into the auxiliary furnace chamber of the crystal pulling furnace.
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公开(公告)号：US11578423B2
公开(公告)日：2023-02-14
申请号：US16617073
申请日：2018-07-03
发明人： Hongming Tang , Linjian Fu , Liming Liu , Saibo Liu
摘要： A magnet coil for magnetic Czochralski single crystal growth includes: a first coil, a second coil, and an auxiliary coil arranged between the first coil and the second coil. A distance between the first coil and a first edge of the auxiliary coil close to the first coil is equal to a distance between the second coil and a second edge of the auxiliary coil close to the second coil. The auxiliary coil, the first coil and the second coil have a common central axis. When being energized, a direction of a current in the first coil is opposite to a direction of a current in the second coil, and a magnetic field generated by a current in the auxiliary coil is used for enhancing a cusp magnetic field between the first coil and the second coil.
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公开(公告)号：US11551922B2
公开(公告)日：2023-01-10
申请号：US16467273
申请日：2017-09-22
申请人： SUMCO CORPORATION
发明人： Tsuyoshi Morita
摘要： Provided are a method of polishing a silicon wafer and a method of producing a silicon wafer which can reduce the formation of step-forming microdefects on a silicon wafer. The method includes: a double-side polishing step of performing polishing on front and back surfaces of a silicon wafer; a notch portion polishing step of performing polishing on a beveled portion of a notch portion of the silicon wafer after the double-side polishing step; a peripheral beveled portion polishing step of performing polishing on the beveled portion on the periphery of the silicon wafer other than the beveled portion of the notch portion after the notch portion polishing step; and a finish polishing step of performing finish polishing on the front surface of the silicon wafer after the peripheral beveled portion polishing step. The notch portion polishing step is performed in a state where the front surface is wet with water.
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公开(公告)号：US20220228292A1
公开(公告)日：2022-07-21
申请号：US17711666
申请日：2022-04-01
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US20220205129A1
公开(公告)日：2022-06-30
申请号：US17553031
申请日：2021-12-16
摘要： Methods for producing single crystal silicon ingots by Continuous Czochralski (CCz) are disclosed. A batch of buffer members (e.g., quartz cullets) is added to an outer melt zone of the crucible assembly before the main body of the ingot is grown. In some embodiments, the ratio of the mass M of the batch of buffer members added to the melt to the time between adding the batch of buffer members to the melt and when the ingot main body begins to grow is controlled such that the ratio of M/T is greater than a threshold M/T.
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公开(公告)号：US20220145494A1
公开(公告)日：2022-05-12
申请号：US17610508
申请日：2020-05-12
发明人： Alison GREENLEE , Jesse S. APPEL , Nathan STODDARD
摘要： A system for producing a ribbon from a melt includes a crucible to contain a melt and a cold block. The cold block has a surface that directly faces an exposed surface of the melt. A ribbon is formed on the melt using the cold block. A furnace is operatively connected to the crucible. The ribbon passes through the furnace after removal from the melt. The furnace includes at least one gas jet. The gas jet can dope the ribbon, form a diffusion barrier on the ribbon, and/or passivate the ribbon. Part of the ribbon passes through the furnace while part of the ribbon is being formed in the crucible using the cold block.
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公开(公告)号：US20220136130A1
公开(公告)日：2022-05-05
申请号：US17435224
申请日：2019-12-26
摘要： An apparatus for manufacturing a single crystal according to a Czochralski method, including: a main chamber housing crucibles for a raw-material melt and heater for heating the raw-material melt; a pulling chamber at an upper portion of the main chamber and a single crystal pulled from the raw-material melt; a cooling cylinder extending from a ceiling portion of the main chamber toward a surface of the raw-material melt to surround the single crystal; an auxiliary cooling cylinder inside the cooling cylinder; and a diameter-enlargement member to fit into the auxiliary cooling cylinder. The auxiliary cooling cylinder has a slit penetrating in an axial direction to come into close contact with the cooling cylinder by pushing the diameter-enlargement member into the auxiliary cooling cylinder to enlarge the diameter of the auxiliary cooling cylinder. This enables efficient cooling of a growing single crystal and increases the growth rate of the single crystal.
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公开(公告)号：US20220127748A1
公开(公告)日：2022-04-28
申请号：US17571348
申请日：2022-01-07
摘要： Methods for forming a unitized crucible assembly for holding a melt of silicon for forming a silicon ingot are disclosed. In some embodiments, the methods involve a porous crucible mold having a channel network with a bottom channel, an outer sidewall channel that extends from the bottom channel, and a central weir channel that extends from the bottom channel. A slip slurry may be added to the channel network and the liquid carrier of the slip slurry may be drawn into the mold. The resulting green body may be sintered to form the crucible assembly.
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公开(公告)号：US11242615B2
公开(公告)日：2022-02-08
申请号：US16627934
申请日：2019-04-18
发明人： Niefeng Sun , Shujie Wang , Tongnian Sun , Huisheng Liu , Huimin Shao , Yanlei Shi
摘要： The invention provides a growth method for preparing high-yield crystals, belongs to the technical field of single crystal growth. Auxiliary crucibles are arranged on a crucible according to different crystal types and according to the crystal orientation of crystal growth in the main crucible, the relationship between the crystal growth direction and twin crystal orientation. By controlling the angle between the auxiliary crucibles and the main crucible, the relative position between the auxiliary crucibles each other, the auxiliary crucibles realize correction on the crystal orientation of twins generated in the main crucible crystal growth process. The growth method for preparing the high-yield crystals provided by the invention has the following advantages: the crystal orientation change caused by twins is corrected through auxiliary crucibles additionally arranged on the main crucible, and the overall yield is improved for the growth process of the dislocation crystal with large probability; the crucible position can be customized according to the influence of twins on the crystal growth direction, suitable for various crystal preparation processes, improving the yield obviously, reducing the crystal processing difficulty, and improving the material utilization rate.
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公开(公告)号：US11111596B2
公开(公告)日：2021-09-07
申请号：US16570010
申请日：2019-09-13
摘要： A method for growing a single crystal silicon ingot by the continuous Czochralski method is disclosed. The melt depth and thermal conditions are constant during growth because the silicon melt is continuously replenished as it is consumed, and the crucible location is fixed. The critical v/G is determined by the hot zone configuration, and the continuous replenishment of silicon to the melt during growth enables growth of the ingot at a constant pull rate consistent with the critical v/G during growth of a substantial portion of the main body of the ingot. The continuous replenishment of silicon is accompanied by periodic or continuous nitrogen addition to the melt to result in a nitrogen doped ingot.
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