公开(公告)号：WO2020198102A1

公开(公告)日：2020-10-01

申请号：PCT/US2020/024131

申请日：2020-03-23

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： LEE, Yang-Yao ,  WU, Hsin-Yen ,  KO, Cheng-Yuan ,  LU, Lung-Tai ,  HUANG, Hung-Tsung

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) about 0.05 wt.% to about 10 wt.% of an abrasive; (b) a dispersant, wherein the dispersant is a linear or branched C 2 -C 10 alkylenediol; and (c) water, wherein the chemical-mechanical polishing composition has a pH of about 2 to about 6. The invention also provides a method of chemically-mechanically polishing a substrate by contacting the substrate with the inventive chemical-mechanical polishing composition.

公开(公告)号：WO2018128849A1

公开(公告)日：2018-07-12

申请号：PCT/US2017/067947

申请日：2017-12-21

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： IVANOV, Roman ,  HUNG LOW, Fernando ,  KO, Cheng-Yuan ,  WHITENER, Glenn

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14

Abstract: The invention provides a chemical mechanical polishing composition comprising (a) silica particles, (b) a polymer comprising sulfonic acid monomeric units, (c) optionally, a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical mechanical polishing composition. Typically, the substrate comprises silicon carbide and silicon nitride.

公开(公告)号：WO2016115153A1

公开(公告)日：2016-07-21

申请号：PCT/US2016/013072

申请日：2016-01-12

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： IVANOV, Roman ,  HUNG, Fernando ,  KO, Cheng-Yuan ,  SUN, Fred

IPC: H01L21/304

CPC classification number: C11D11/0047 ,  C11D3/0073 ,  C11D7/06 ,  C11D7/261 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3281 ,  C11D7/329 ,  C11D7/34 ,  H01L21/02074

Abstract: The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains one or more quaternary ammonium hydroxides, one or more organic amines, one or more metal inhibitors, and water. The invention also provides methods for using the cleaning composition.

Abstract translation: 本发明提供了用于在化学机械抛光之后从半导体晶片清洗污染物的组合物。 清洁组合物含有一种或多种季铵氢氧化物，一种或多种有机胺，一种或多种金属抑制剂和水。 本发明还提供了使用清洁组合物的方法。

公开(公告)号：WO2020123332A1

公开(公告)日：2020-06-18

申请号：PCT/US2019/065136

申请日：2019-12-09

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： KO, Cheng-Yuan ,  HUANG, Hung-Tsung ,  CARTER, Tyler, J.

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/34 ,  B24B57/02

Abstract: The invention provides a chemical-mechanical polishing composition comprising(a) an abrasive having a Vickers hardness of 16 GPa or more, and (b) a liquid carrier, wherein the polishing composition is substantially free of an oxidizing agent and wherein the polishing composition has a pH of about 0 to about 7. The invention further provides a method of polishing a substrate, especially a substrate comprising ruthenium, with the polishing composition.

公开(公告)号：WO2016011329A1

公开(公告)日：2016-01-21

申请号：PCT/US2015/040871

申请日：2015-07-17

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： IVANOV, Roman ,  KO, Cheng-Yuan ,  SUN, Fred

IPC: C09K3/00 ,  H01L21/304

CPC classification number: C11D11/0047 ,  C11D7/3209 ,  C11D7/3218 ,  C11D7/3272 ,  H01L21/02074

Abstract: The invention provides stabilized solutions useful as raw materials in various applications and methods for stabilizing such aqueous solutions with a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof. Stabilized solutions and methods for stabilizing aqueous solutions thereof, include, for example, those of tris(2 -hydroxy ethyl)methylammonium hydroxide (THEMAH) and/or carbohydrazide (CHZ).

Abstract translation: 本发明提供了用作各种用途的原料的稳定溶液，以及用包含一种或多种二烷基羟胺或其无机或有机酸盐的稳定剂稳定该水溶液的方法。 用于稳定其水溶液的稳定溶液和方法包括例如三（2-羟基乙基）甲基氢氧化铵（THEMAH）和/或碳酰肼（CHZ）的溶液和方法。

公开(公告)号：WO2014151361A1

公开(公告)日：2014-09-25

申请号：PCT/US2014/025563

申请日：2014-03-13

Applicant: CABOT MICROELECTRONICS CORPORATION

Inventor： KO, Cheng-Yuan

IPC: C23G1/00

CPC classification number: C11D7/3281 ,  C11D3/0073 ,  C11D3/2086 ,  C11D3/26 ,  C11D3/28 ,  C11D3/30 ,  C11D3/33 ,  C11D3/361 ,  C11D3/364 ,  C11D3/365 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/36 ,  C11D11/0047 ,  C23G1/18 ,  C23G1/20 ,  H01L21/02074

Abstract: An aqueous cleaning composition for post copper chemical mechanical planarization is provided. The composition comprises an organic base, a copper etchant, an organic ligand, a corrosion inhibitor, and water, wherein the organic base is in a concentration of at least 200 ppm, the copper etchant is in a concentration of at least 200 ppm, the organic ligand is in a concentration of at least 50 ppm, and the corrosion inhibitor is in a concentration of at least 10 ppm. When used in the post copper chemical mechanical planarization cleaning procedure, the aqueous cleaning composition can effectively remove the residual contaminants from the wafer surface and reduce the defect counts on the wafer surface, while simultaneously, impart the wafers with a better surface roughness.

Abstract translation: 提供了用于后铜化学机械平面化的水性清洁组合物。 组合物包含有机碱，铜蚀刻剂，有机配体，腐蚀抑制剂和水，其中有机碱的浓度至少为200ppm，铜蚀刻剂的浓度至少为200ppm， 有机配体浓度至少为50ppm，腐蚀抑制剂的浓度至少为10ppm。 当用于后期铜化学机械平面化清洁程序时，水性清洁组合物可以有效地从晶片表面去除残留的污染物并减少晶片表面上的缺陷计数，同时赋予晶片更好的表面粗糙度。