公开(公告)号：WO2010120372A2

公开(公告)日：2010-10-21

申请号：PCT/US2010/001133

申请日：2010-04-16

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. ,  WALTER, Gabriel ,  FENG, Milton ,  HOLONYAK, Nick ,  THEN, Han, Wui ,  WU, Chao-hsin

Inventor： WALTER, Gabriel ,  FENG, Milton ,  HOLONYAK, Nick ,  THEN, Han, Wui ,  WU, Chao-hsin

IPC: H01S3/0941 ,  H01S3/00

CPC classification number: H01S5/06203 ,  B82Y20/00 ,  H01S5/0035 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/3095 ,  H01S5/34313

Abstract: A method for producing light emission from a two terminal semiconductor device with improved efficiency, includes the following steps: providing a layered semiconductor structure including a semiconductor drain region comprising at least one drain layer, a semiconductor base region disposed on the drain region and including at least one base layer, and a semiconductor emitter region disposed on a portion of the base region and comprising an emitter mesa that includes at least one emitter layer; providing, in the base region, at least one region exhibiting quantum size effects; providing a base/drain electrode having a first portion on an exposed surface of the base region and a further portion coupled with the drain region, and providing an emitter electrode on the surface of the emitter region; applying signals with respect to the base/drain and emitter electrodes to obtain light emission from the base region; and configuring the base/drain and emitter electrodes for substantial uniformity of voltage distribution in the region therebetween. In a further embodiment lateral scaling is used to control device speed for high frequency operation.

Abstract translation: 一种从提高效率的二端子半导体器件产生发光的方法，包括以下步骤：提供包括半导体漏极区域的分层半导体结构，该半导体漏极区域包括至少一个漏极层，设置在漏极区域上的半导体基极区域， 至少一个基极层，以及设置在所述基极区域的一部分上并且包括发射极台面的半导体发射极区域，所述发射极台面包括至少一个发射极层; 在碱性区域中提供至少一个呈现量子效应的区域; 提供在所述基极区域的暴露表面上具有第一部分的基极/漏电极，以及与所述漏极区域耦合的另一部分，并且在所述发射极区域的表面上提供发射极; 施加相对于基极/漏极和发射极电极的信号以获得从基极区域发出的光; 以及在其间的区域中配置基极/漏极和发射极用于电压分布的实质均匀性。 在另一实施例中，横向缩放用于控制高频操作的设备速度。

公开(公告)号：WO2008123965A1

公开(公告)日：2008-10-16

申请号：PCT/US2008/004211

申请日：2008-04-01

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  HOLONYAK, Nick Jr. ,  FENG, Milton ,  WALTER, Gabriel

Inventor： HOLONYAK, Nick Jr. ,  FENG, Milton ,  WALTER, Gabriel

IPC: H01S5/30 ,  H01S5/068

CPC classification number: H01S5/06203 ,  B82Y20/00 ,  H01S5/34 ,  H01S5/3412 ,  H01S5/3416

Abstract: A method for controlling operation of a transistor includes the following steps: providing a bipolar transistor having emitter, base and collector regions; applying electrical signals to the transistor to produce light emission from the transistor; effecting photon-assisted tunneling of carriers in the transistor with self-generated photons of the light emission, and controlling operation of the transistor by controlling the photon-assisted tunneling.

Abstract translation: 一种用于控制晶体管的操作的方法包括以下步骤：提供具有发射极，基极和集电极区域的双极晶体管; 将电信号施加到晶体管以产生来自晶体管的光发射; 通过发光的自发光子对晶体管中的载流子进行光子辅助隧穿，并且通过控制光子辅助隧道来控制晶体管的操作。

公开(公告)号：WO2006093883A3

公开(公告)日：2006-09-08

申请号：PCT/US2006/006879

申请日：2006-02-27

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  FENG, Milton ,  HOLONYAK, Nick, Jr. ,  CHAN, Richard ,  WALTER, Gabriel

Inventor： FENG, Milton ,  HOLONYAK, Nick, Jr. ,  CHAN, Richard ,  WALTER, Gabriel

IPC: H01S3/13

Abstract: A method for producing an optical output includes the following steps: providing first and second electrical signals; providing a bipolar light-emitting transistor device that includes collector, base, and emitter regions; providing a collector electrode coupled with the collector region and an emitter electrode coupled with the emitter region, and coupling electrical potentials with respect to the collector and emitter electrodes; providing an optical coupling in optical communication with the base region; providing first and second base electrodes coupled with the base region; and coupling the first and second electrical signals with the first and second base electrodes, respectively, to produce an optical output emitted from the base region and coupled into the optical coupling, the optical output being a function of the first and second electrical signals. Also disclosed in an improved pnp transistor laser and a technique for switching back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode.

公开(公告)号：WO2009051664A2

公开(公告)日：2009-04-23

申请号：PCT/US2008/011653

申请日：2008-10-10

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  HOLONYAK, Nick, Jr. ,  FENG, Milton ,  WALTER, Gabriel ,  JAMES, Adam

Inventor： HOLONYAK, Nick, Jr. ,  FENG, Milton ,  WALTER, Gabriel ,  JAMES, Adam

IPC: H01L33/00 ,  H01S3/094

CPC classification number: H01S5/06203 ,  H01S5/3095

Abstract: A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.

Abstract translation: 用于响应于电信号产生光发射的两端半导体器件包括：无端子半导体基极区域，其布置在半导体发射极区域和半导体集电极区域之间，所述半导体集电极区域具有与基极相邻的隧道结 地区; 该基极区具有显示量子尺寸效应的区域; 发射极端子和集电极端子，分别与发射极区域和集电极区域耦合; 由此电信号相对于发射极和集电极端子的施加导致从基极区发射光。 电信号的施加用于反向偏置隧道结。 在隧道结处产生的孔在基极区域中重新结合，电子流入基极区域，导致发光。 显示量子尺寸效应的区域有助于重组。

公开(公告)号：WO2009051663A3

公开(公告)日：2009-04-23

申请号：PCT/US2008/011652

申请日：2008-10-10

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  FENG, Milton ,  HOLONYAK, Nick, Jr.

Inventor： FENG, Milton ,  HOLONYAK, Nick, Jr.

IPC: H01L21/331 ,  H01L29/737

Abstract: A field-effect transistor device, including: a semiconductor heterostructure comprising, in a vertically stacked configuration, a semiconductor gate layer between semiconductor source and drain layers, the layers being separated by heterosteps; the gate layer having a thickness of less than about 100 Angstroms; and source, gate, and drain electrodes respectively coupled with said source, gate, and drain layers. Separation of the gate by heterosteps, rather than an oxide layer, has very substantial advantages.

公开(公告)号：WO2005020287A3

公开(公告)日：2005-03-03

申请号：PCT/US2004/027019

申请日：2004-08-20

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  FENG, Milton ,  HOLONYAK, Nick, Jr. ,  HAFEZ, Walid

Inventor： FENG, Milton ,  HOLONYAK, Nick, Jr. ,  HAFEZ, Walid

IPC: H01L29/205

Abstract: Methods and devices are disclosed for producing controllable light emission from a bipolar transistor. Also, a method is disclosed for increasing the speed of a bipolar transistor, including the following steps: providing a bipolar transistor having emitter (150), base (140), and collector (130) regions; providing electrodes (115, 145, 165) for coupling electrical signals with the emitter (150), base (140), and collector (130) regions; and adapting the base region (140) to enhance stimulated emission to the detriment of spontaneous emission, so as to reduce carrier recombination lifetime in the base region (140).

公开(公告)号：WO2003034457A2

公开(公告)日：2003-04-24

申请号：PCT/US2002/031088

申请日：2002-10-01

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

Inventor： FENG, Milton ,  HOLONYAK, Nick, Jr. ,  BECHER, David ,  SHEN, Shyh-Chiang ,  CHAN, Richard

IPC: H01H57/00

CPC classification number: H01H59/0009 ,  H01H2001/0084 ,  H01H2059/0072

Abstract: A high life cycle and low voltage MEMS device. In an aspect of the invention, separate support posts are disposed to prevent a suspended switch pad from touching the actuation pad while permitting the switch pad to ground a signal line. In another aspect of the invention, cantilevered support beams are made from a thicker material than the switching pad. Increased thickness material in the cantilever tends to keep the switch flat in its resting position. Features of preferred embodiments include dimples in the switch pad to facilitate contact with a signal line and serpentine cantilevers arranged symmetrically to support the switch pad.

Abstract translation: 高寿命周期和低电压MEMS器件。 在本发明的一个方面中，设置单独的支撑柱以防止悬挂的开关垫接触致动垫，同时允许开关垫将信号线接地。 在本发明的另一方面，悬臂支撑梁由比切换垫更厚的材料制成。 悬臂中厚度增加的材料倾向于将开关保持在其静止位置。 优选实施例的特征包括开关板中的凹坑，以便于与信号线接触并且对称地布置以支撑开关垫的蛇形悬臂。

公开(公告)号：WO2014089355A1

公开(公告)日：2014-06-12

申请号：PCT/US2013/073414

申请日：2013-12-05

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS

Inventor： FENG, Milton ,  HOLONYAK, Nick ,  WU, Mong-Kai

IPC: H01L33/04

CPC classification number: H01S5/06203 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/105 ,  H01S5/1071

Abstract: A ring cavity light-emitting transistor device, including: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with the base layer, said collector layer, and said emitter layer, the base metalization including at least one annular ring coupled with a surface of the base layer; and an annular ring- shaped optical resonator in a region of the semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to the base, collector, and emitter metalizations causes light emission in the base layer that propagates in the ring-shaped optical resonator cavity.

Abstract translation: 一种环腔发光晶体管器件，包括：半导体集电器和第二导电类型的发射极层之间的第一导电类型的半导体基底层的平面半导体结构; 基极，集电极和发射极金属化，其分别与基极层，所述集电极层和所述发射极层耦合，所述基极金属化包括与所述基极层的表面耦合的至少一个环形环; 以及在所述半导体结构的通常包括所述基极和发射极区域的界面的区域中的环形环形光学谐振器; 由此相对于基极，集电极和发射极金属化施加电信号导致在环形光谐振腔中传播的基极层中的光发射。

公开(公告)号：WO2010080694A2

公开(公告)日：2010-07-15

申请号：PCT/US2010/000027

申请日：2010-01-07

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  QUANTUM ELECTRO OPTO SYSTEMS SDN. BHD. ,  WALTER, Gabriel ,  HOLONYAK, Nick ,  FENG, Milton

Inventor： WALTER, Gabriel ,  HOLONYAK, Nick ,  FENG, Milton

IPC: H01S5/00 ,  H01S5/30

CPC classification number: H01S5/06203 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/3412 ,  H01S5/34313

Abstract: A semiconductor light emitting device, including: a heterojunction bipolar light-emitting transistor having a base region between emitter and collector regions; emitter, base, and collector electrodes for coupling electrical signals with the emitter, base, and collector regions, respectively; and a quantum size region in the base region; the base region including a first base sub-region on the emitter side of the quantum size region, and a second base sub-region on the collector side of the quantum size region; and the first and second base sub- regions having asymmetrical band structures. Also disclosed is a method for producing light emission from a two-terminal semiconductor structure, including the following steps: providing a semiconductor structure that includes a first semiconductor junction between an emitter region of a first conductivity type and a base region of a second conductivity type opposite to that of the first conductivity type, and a second semiconductor junction between the base region and a drain region; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor structure.

Abstract translation: 一种半导体发光器件，包括：具有发射极和集电极区域之间的基极区域的异质结双极型发光晶体管; 发射极，基极和集电极，用于将电信号分别与发射极，基极和集电极区域耦合; 和基极区域中的量子尺寸区域; 所述基区包括所述量子尺寸区域的发射极侧的第一基极子区域和所述量子尺寸区域的集电极侧的第二基极子区域; 并且第一和第二基本子区域具有不对称的带结构。 还公开了一种用于从二端子半导体结构产生发光的方法，包括以下步骤：提供包括第一导电类型的发射极区域和第二导电类型的基极区域之间的第一半导体结的半导体结构 与第一导电类型的相反，以及在基极区域和漏极区域之间的第二半导体结; 在基区内提供显示量子尺寸效应的区域; 提供与发射极区域耦合的发射极; 提供与所述基极区域和所述漏极区域耦合的基极/漏极电极; 并且相对于发射极和基极/漏极施加信号以获得来自半导体结构的发光。

公开(公告)号：WO2010036301A2

公开(公告)日：2010-04-01

申请号：PCT/US2009/005004

申请日：2009-09-04

Applicant: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS ,  FENG, Milton ,  HOLONYAK, Nick ,  THEN, Han, Wui

Inventor： FENG, Milton ,  HOLONYAK, Nick ,  THEN, Han, Wui

IPC: H04B10/12 ,  H04B10/00 ,  H04B10/02

CPC classification number: H04B10/5053 ,  H04B10/588

Abstract: A first form of a method for producing an optical output in substantially linear relationship with an electrical AC signal, includes the following steps: providing a light-emitting transistor having emitter, base, and collector regions, and associated respective emitter, base, and collector terminals, the transistor having a light-emitting output port; applying the AC signal to a first input port defined across a given one of the terminals and a common one of the terminals; applying an amplified version of the AC signal to a second input port defined across a further one of the terminals and the common one of the input terminals; and selecting an amplification of the amplified version of the AC signal to substantially cancel a nonlinearity characteristic of the light emitting transistor. A second form of the method involves predistortion feedback linearization of an optical signal using a light-emitting transistor or transistor laser.

Abstract translation: 用于产生与电AC信号基本上线性关系的光输出的方法的第一形式包括以下步骤：提供具有发射极，基极和集电极区域的发光晶体管以及相关联的各个发射极，基极和集电极 端子，所述晶体管具有发光输出端口; 将AC信号施加到限定在给定的一个端子和所述端子中的公共端子之间的第一输入端口; 将AC信号的放大版本应用于跨越另一个终端和所述公共输入终端之一限定的第二输入端口; 以及选择所述AC信号的放大版本的放大，以基本上消除所述发光晶体管的非线性特性。 该方法的第二种形式涉及使用发光晶体管或晶体管激光器的光信号的预失真反馈线性化。