SELECTIVE ACTIVATION OF BEARERS IN A CONNECTION

    公开(公告)号:WO2018175199A1

    公开(公告)日:2018-09-27

    申请号:PCT/US2018/022652

    申请日:2018-03-15

    Abstract: Certain aspects of the present disclosure relate to methods and apparatus for selectively activating bearers in a connection. An exemplary method generally includes configuring one or more radio bearers for communicating with the network, determining that data associated with at least one radio bearer of the one or more radio bearers needs to be transmitted, selectively activating the at least one radio bearer based on the determination that the data associated with the at least one radio bearer needs to be transmitted, transmitting the data over the at least one activated radio bearer.

    SPLIT BEAMFORMING REFINEMENT PHASE (BRP) BASED SECTOR LEVEL SWEEP (SLS) FOR MULTI-ANTENNA ARRAY DEVICES

    公开(公告)号:WO2018160646A1

    公开(公告)日:2018-09-07

    申请号:PCT/US2018/020138

    申请日:2018-02-28

    Abstract: Certain aspects of the present disclosure provide methods and apparatus for enhancing a beamforming training procedure between wireless nodes comprising multiple transmit and receive antenna arrays (multi-antenna array devices). For example, an apparatus can include a processing system that generates a plurality of transmit beamforming refinement frames for a transmit sector sweep that each include a preamble, a data field, at least one beamforming training field, identification of a transmit antenna array to be used for transmitting the at least one beamforming training field, and a status indication of whether the transmit beamforming refinement frame is a last transmit beamforming refinement frame in the transmit sector sweep for one or more receive antenna arrays of a wireless node. The apparatus also includes a first interface that outputs the transmit beamforming refinement frames using a first transmit beamforming sector for the preambles and data fields, and one or more second transmit beamforming sectors for subfields of the beamforming training fields. Said apparatus can be used in a split beamforming refinement phase based sector level sweep (split BRP-based SLS).

    RE-TIMING BASED CLOCK GENERATION AND RESIDUAL SIDEBAND (RSB) ENHANCEMENT CIRCUIT
    93.
    发明申请
    RE-TIMING BASED CLOCK GENERATION AND RESIDUAL SIDEBAND (RSB) ENHANCEMENT CIRCUIT 审中-公开
    基于重新计时的时钟生成和剩余边带(RSB)增强电路

    公开(公告)号:WO2018052982A3

    公开(公告)日:2018-03-22

    申请号:PCT/US2017/051336

    申请日:2017-09-13

    Abstract: Certain aspects of the present disclosure generally relate to methods and apparatus for generating clock signals. For example, certain aspects of the present disclosure provide a clock generation circuit. The clock generation circuit may include a first transistor (402) connected in cascode with a second transistor (404), wherein an input clock (Clk_in) node of the circuit is coupled to gates of the first and second transistors. The clock generation circuit may also include a frequency divider circuit (406) having an input coupled to the input clock node, wherein an output (Div_out) of the frequency divider circuit is coupled to a source of the second transistor, and wherein an output node (Clk_out) of the circuit is coupled to drains of the first and second transistors.

    Abstract translation: 本公开的某些方面一般涉及用于生成时钟信号的方法和装置。 例如,本公开的某些方面提供了一种时钟生成电路。 时钟生成电路可以包括与第二晶体管(404)共源共栅连接的第一晶体管(402),其中电路的输入时钟(Clk_in)节点耦合到第一和第二晶体管的栅极。 时钟生成电路还可以包括分频器电路(406),该分频器电路具有耦合到输入时钟节点的输入,其中分频器电路的输出(Div_out)被耦合到第二晶体管的源极,并且其中输出节点 (Clk_out)耦合到第一和第二晶体管的漏极。

    CENTER FREQUENCY AND Q TUNING OF BIQUAD FILTER BY AMPLITUDE-LIMITED OSCILLATION-BASED CALIBRATION
    95.
    发明申请
    CENTER FREQUENCY AND Q TUNING OF BIQUAD FILTER BY AMPLITUDE-LIMITED OSCILLATION-BASED CALIBRATION 审中-公开
    双振幅滤波器的中心频率和Q调谐(基于振幅的振动校准)

    公开(公告)号:WO2018034779A1

    公开(公告)日:2018-02-22

    申请号:PCT/US2017/042817

    申请日:2017-07-19

    Abstract: Certain aspects of the present disclosure provide methods and apparatus for calibrating a tunable active filter. One example apparatus is a filter circuit that generally includes a tunable active filter comprising at least one amplifier and a first feedback path coupled between an input and an output of the at least one amplifier, the first feedback path comprising at least one switch; and an amplitude limiter coupled to the tunable active filter and comprising at least one transistor disposed in a second feedback path coupled between the input and the output of the at least one amplifier.

    Abstract translation: 本公开的某些方面提供了用于校准可调谐有源滤波器的方法和设备。 一个示例装置是滤波器电路,其通常包括可调谐有源滤波器,所述可调谐有源滤波器包括至少一个放大器和耦合在所述至少一个放大器的输入和输出之间的第一反馈路径,所述第一反馈路径包括至少一个开关; 以及振幅限制器,其耦合到所述可调谐有源滤波器并且包括设置在耦合在所述至少一个放大器的所述输入和所述输出之间的第二反馈路径中的至少一个晶体管。

    RF FILTER WITH REDUCED INSERTION LOSS
    96.
    发明申请
    RF FILTER WITH REDUCED INSERTION LOSS 审中-公开
    RF滤波器,降低插入损耗

    公开(公告)号:WO2018013326A1

    公开(公告)日:2018-01-18

    申请号:PCT/US2017/039270

    申请日:2017-06-26

    Abstract: The invention relates to an RF filter with reduced insertion loss. The filter (F) includes a first bandpass filter (BPF1) having a passband, a circuit unit (SE) having an undesired excitation at a critical frequency (f s ) and a reflector (R) that reflects RF signals of this frequency before the circuit unit is undesirably excited and the power is lost as a result.

    Abstract translation: 本发明涉及具有减小的插入损耗的RF滤波器。 滤波器(F)包括具有通带的第一带通滤波器(BPF1),在临界频率(f s)具有不希望的激励的电路单元(SE)和反射器(R),其反射 这个频率的RF信号在电路单元被不希望地激励并且功率因此而损失之前。

    SAW FILTER WITH INTERFERENCE MODE SUPPRESSION
    97.
    发明申请
    SAW FILTER WITH INTERFERENCE MODE SUPPRESSION 审中-公开
    带干扰模式抑制的SAW滤波器

    公开(公告)号:WO2017210177A1

    公开(公告)日:2017-12-07

    申请号:PCT/US2017/034977

    申请日:2017-05-30

    Abstract: In a first group (FG1) of transducer fingers of an interdigital transducer of the SAW filter, a geometric parameter (eta) determining the resonance of the main mode of the transducer is varied in the transverse direction (TR) with a first increment. In a second group (FG2) of transducer fingers (EF), the geometric parameter is varied with a second increment that is opposed in effect to the first, so that the transverse geometric variation of the first and the second groups of transducer fingers accordingly compensate for each other, wherein the resonance of the main mode (M1) remains unchanged, while the interfering secondary mode (M2) is suppressed.

    Abstract translation: 在SAW滤波器的叉指式换能器的换能器指的第一组(FG1)中,确定换能器的主模的谐振的几何参数(η)在横向方向上变化 TR)与第一个增量。 在换能器指状物(EF)的第二组(FG2)中,几何参数以与第一增量相反的第二增量变化,使得第一和第二组换能器指状物的横向几何变化相应地补偿 对于彼此,其中主模式(M1)的谐振保持不变,而干扰次级模式(M2)被抑制。

    MULTIPLEXER WITH FILTERS REALIZED IN DIFFERENT TECHNOLOGIES
    98.
    发明申请
    MULTIPLEXER WITH FILTERS REALIZED IN DIFFERENT TECHNOLOGIES 审中-公开
    具有滤波器的多路复用器实现了不同的技术

    公开(公告)号:WO2017184759A1

    公开(公告)日:2017-10-26

    申请号:PCT/US2017/028403

    申请日:2017-04-19

    Abstract: In a multiplexer configured for signal separation in carrier-aggregation mode, two filters of the multiplexer are designed in different technologies with different reflection behavior. The selection and assignment of the respective technology for one of the two filters respectively takes place such that the filter designed with the respective technology has a higher reflectivity for the respective counter band. The first filter (FEl) may be configured for band 8 and designed as an SAW filter on a lithium tantalate substrate, in which the second filter (FE2) may be configured for band 20 and designed as an SAW filter on a lithium niobate substrate and provided with a temperature compensation layer.

    Abstract translation: 在配置用于载波聚合模式中的信号分离的多路复用器中,多路复用器的两个滤波器被设计成具有不同反射行为的不同技术。 对于两个滤波器中的一个滤波器分别进行相应技术的选择和分配,使得用相应技术设计的滤波器对于相应计数频带具有较高的反射率。 第一滤波器(FE1)可以被配置用于频带8并且被设计为钽酸锂基板上的SAW滤波器,其中第二滤波器(FE2)可以被配置用于频带20并且被设计为铌酸锂基板上的SAW滤波器并且 提供温度补偿层。

    MULTISTAGE ARRANGEMENT HAVING REDUCED DISPERSION
    99.
    发明申请
    MULTISTAGE ARRANGEMENT HAVING REDUCED DISPERSION 审中-公开
    多阶段安排具有减少的分散

    公开(公告)号:WO2017180651A1

    公开(公告)日:2017-10-19

    申请号:PCT/US2017/027050

    申请日:2017-04-11

    CPC classification number: H03H11/16 H03H7/40 H04B1/18

    Abstract: To compensate the negative effect of a parasitic impedance element in a two-stage arrangement of a first and a second electric component a compensation element is inserted between first and second stage to supplement the parasitic impedance elements to yield a phase shifter.

    Abstract translation: 为了补偿第一和第二电部件的两级布置中的寄生阻抗元件的负面影响,将补偿元件插入在第一和第二级之间以补充寄生阻抗元件以产生 一个移相器。

    MULTILAYER INTERCONNECTION SUBSTRATE FOR HIGH FREQUENCY AND MANUFACTURING METHOD THEREOF
    100.
    发明申请
    MULTILAYER INTERCONNECTION SUBSTRATE FOR HIGH FREQUENCY AND MANUFACTURING METHOD THEREOF 审中-公开
    高频多层互连基板及其制造方法

    公开(公告)号:WO2017173350A1

    公开(公告)日:2017-10-05

    申请号:PCT/US2017/025521

    申请日:2017-03-31

    Abstract: [Problem] To realize high reliability and high functionalization while suppressing characteristics variation in a multilayer interconnection substrate used in a microwave or millimeter-wave band integrated with an antenna. [Resolution Means] A multilayer substrate for high frequency with an antenna element formed on a surface. The multilayer substrate for high frequency has an intermediate substrate. The intermediate substrate consists of a low-temperature co-fired glass-ceramic substrate and has intermediate insulating layers consisting of a glass-ceramic and an internal conductor formed between these intermediate insulating layers. A surface insulating layer consisting of an organic material having a dielectric constant lower than a glass-ceramic material is stacked on a surface of the intermediate substrate. An outer-side via conductor penetrating this surface insulating layer is configured by a sintered metal that forms a metallic bond with a wiring conductor in the substrate. The outer-side via conductor is formed at the same time as sintering the glass-ceramic multilayer substrate.

    Abstract translation: 为了实现高可靠性和高功能化,同时抑制在与天线集成的微波或毫米波波段中使用的多层互连基板中的特性变化。 [分辨率装置]表面上形成有天线元件的高频多层基板。 高频用多层基板具有中间基板。 中间基片由低温共烧玻璃陶瓷基片构成,并具有由玻璃陶瓷和在这些中间绝缘层之间形成的内导体组成的中间绝缘层。 由介电常数低于玻璃陶瓷材料的有机材料构成的表面绝缘层堆叠在中间基板的表面上。 贯穿该表面绝缘层的外侧通路导体由与基板中的布线导体形成金属结合的烧结金属构成。 外侧通路导体与烧结玻璃陶瓷多层基板的同时形成。

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