Abstract:
In a method of making a c-Si-based cell or a µc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH 3 /H 2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH 3 /H 2
Abstract translation:在制造c-Si基电池或μC-Si基电池的方法中,提高少数电荷载体寿命的方法包括:a)将c-Si或多晶硅晶片放入低于CVD反应室 真空条件,并对晶片的基板进行加热; 和b)将包含NH 3 / H 2 N 2的混合气体在低真空压力下通入反应室足够的时间并以足够的流速使得 a-Si:H层,其足以增加c-Si或多晶硅电池的寿命超过a-Si:H层生长的寿命,而不用NH 3 / H 3 SUB> 2 SUB>
Abstract:
The present invention provides propellant formulations for non-pharmaceutical use in dispersing insoluble particles having biological activity, such as bacterial spores and/or biological analogues, using a dispersion device such as a metered-dose inhaler. It is preferred that the propellant formulations of the present invention are chemically compatible with the biological analogues with which they are to be used, have substantially the same specific gravity as the biological analogues, and have sufficient vapor pressure to prevent agglomeration of the biological analogues. Methods of dispersing said biological analogues in accordance with the present invention are also provided.
Abstract:
Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.
Abstract:
A Zymomonas integrant posseses the ability to ferment pentose into ethanol. The operon encoding for the pentose-fermenting enzymes are integrated into the Zymomonas genome in a two-integration event of homologous recombination and transposition. Each operon may include more than one pentose-reducing enzyme encoding sequence. The integrant in some embodiments includes enzyme sequences encoding xylose isomerase, xylulokinase, transketolase and transaldolase. The Zymomonas integrants are highly stable, and retain activity for producing the pentose-fermenting enzyme for between 80 to 160 generations. The integrants are also resistant to acetate inhibition, as the integrants demonstrate efficient ethanol production even in the presence of 8 up to 16 grams acetate per liter media.
Abstract:
The present invention provides a method for carrying out high temperature thermal dissociation reactions requiring rapid-heating and short residence times using solar energy. In particular, the present invention provides a method for carrying out high temperature thermal reactions such as dissociation of hydrocarbon containing gases and hydrogen sulfide to produce hydrogen and dry reforming of hydrocarbon containing gases with carbon dioxide. In the methods of the invention where hydrocarbon containing gases are dissociated, fine carbon black particles are also produced. The present invention also provides solar-thermal reactors and solar-thermal reactor systems.
Abstract:
A multi-junction, monolithic, photovoltaic (PV) cell and device (600) is provided for converting radiant energy to photocurrent and photovoltage with improved efficiency. The PV cell includes an array of subcells (602), i.e., active p/n junctions, grown on a compliant substrate, where the compliant substrate accommodates greater flexibility in matching lattice constants to adjacent semiconductor material. The lattice matched semiconductor materials are selected with appropriate band-gaps to efficiently create photovoltage from a larger portion of the solar spectrum. Subcell strings (601, 603) from multiple PV cells are voltage matched to provide high output PV devices. A light emitting cell and device is also provided having monolithically grown red-yellow and green emission subcells and a mechanically stacked blue emission subcell.
Abstract:
A multi-junction solar cell device (10) is provided. The multi-junction solar cell device (10) comprises either two or three active solar cells connected in series in a monolithic structure. The multi-junction device (10) comprises a bottom active cell (20) having a single-crystal silicon substrate base and an emitter layer (23). The multi-junction device (10) further comprises one or two subsequent active cells each having a base layer (32) and an emitter layer (23) with interconnecting tunnel junctions between each active cell. At least one layer that forms each of the top and middle active cells is composed of a single-crystal III-V semiconductor alloy that is substantially lattice-matched to the silicon substrate (22). The polarity of the active p-n junction cells is either p-on-n or n-on-p. The present invention further includes a method for substantially lattice matching single-crystal III-V semiconductor layers with the silicon substrate (22) by including boron and/or nitrogen in the chemical structure of these layers.
Abstract:
A tunable circuit (10) for a capacitively tunable capacitor device (12) is provided. The tunable cirecuit (10) comprises a tunable circuit element (14) and a non-tunable dielectric element (16) coupled to the tunable circuit element (16). A tunable capacitor device (12) and a method for increasing the figure of merit in a tunable capacitor device (12) are also provided.
Abstract:
A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6eV) n-i-p solar cell having a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer.
Abstract:
The present invention discloses an amorphous material comprising nickel oxide doped with tantalum that is an anodically coloring electrochromic martial. The material of the present invention is prepared in the form of an electrode (200) having a thin film (202) of an electrochromic material of the present invention residing on a transparent conductive film (203). The material of the present invention is also incorporated into an electrochromic device (100) as a thin film (102)in conjunction with a cathodically coloring prior art electrochromic material layer (104) such that the devices contain both anodically coloring (102) and cathodically coloring (104) layers. The materials of the electrochromic layers in these devices exhibit broadband optical complimentary behavior, ionic species complimentary behavior, and coloration efficiency complimentary behavior in their operation.