公开(公告)号：WO0145134A9

公开(公告)日：2002-11-14

申请号：PCT/US0042174

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/321

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

Abstract translation: 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

公开(公告)号：WO0137311A3

公开(公告)日：2001-10-11

申请号：PCT/US0042158

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32688

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

Abstract translation: 公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。 该装置包括具有多个第一磁性元件的第一磁性桶。 第一磁性元件被配置用于在处理室内产生第一磁场。 该装置还包括具有多个第二磁性元件的第二磁性桶。 第二磁性元件构造成用于在处理室内产生第二磁场。 第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。 所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

公开(公告)号：WO2001045134A3

公开(公告)日：2001-06-21

申请号：PCT/US2000/042174

申请日：2000-11-14

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D., III ,  SCHOEPP, Alan, M. ,  KUTHI, Andras

Inventor： BAILEY, Andrew, D., III ,  SCHOEPP, Alan, M. ,  KUTHI, Andras

IPC: H01J37/32

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

公开(公告)号：WO2008130518A1

公开(公告)日：2008-10-30

申请号：PCT/US2008/004759

申请日：2008-04-11

Applicant: LAM RESEARCH CORPORATION ,  THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

Inventor： THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: C23C18/1628 ,  Y10T137/87652

Abstract: A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

Abstract translation: 化学流体处理系统被定义为向混合歧管的多个流体输入提供许多化学物质。 化学流体处理系统包括多个流体再循环回路，用于分别预处理和控制每个化学物质的供应。 每个流体循环回路被定义为对特定的一个化学成分进行脱气，加热和过滤。 混合歧管被定义为混合化学品的数量以形成化学镀溶液。 混合歧管包括连接到供应管线的流体输出。 供电线连接以将化学镀溶液供应到化学镀室内的流体碗。

公开(公告)号：WO2003012821A3

公开(公告)日：2003-02-13

申请号：PCT/US2002/023092

申请日：2002-07-18

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

Inventor： WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

IPC: H01J37/32

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn (704) with a first turn gap (1112); a second turn (708) with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector (1132) electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

公开(公告)号：WO1998014636A1

公开(公告)日：1998-04-09

申请号：PCT/US1997017663

申请日：1997-09-30

Applicant: LAM RESEARCH CORPORATION ,  KENNEDY, William, S. ,  WICKER, Thomas, E. ,  MARASCHIN, Robert, A. ,  COOK, Joel, M. ,  SCHOEPP, Alan, M.

Inventor： LAM RESEARCH CORPORATION

IPC: C23C16/44

CPC classification number: C23C16/45521 ,  C23C16/458 ,  H01J37/321 ,  H01J2237/022 ,  Y10S156/915

Abstract: In a plasma processing system for processing substrates such as semiconductor wafers, deposition of polymer in an area (30) between a focus ring (16) and an electrostatic chuck (14) in a plasma processing chamber (10) is achieved by providing a clearance gas in a gap between the chuck and the focus ring. A series of channels delivers the clearance gas to the annular gap between the outer surface of the substrate support and the inner surface of the focus ring surrounding the substrate support. The clearance gas supplied to the annular gap is preferably a gas such as helium which will not affect the wafer processing operation. In the case of plasma etching, the clearance gas is supplied at a flow rate which is sufficient to block the migration of process gas and volatile by products thereof into the annular gap without adversely affecting edge etch performance.

Abstract translation: 在用于处理诸如半导体晶片的衬底的等离子体处理系统中，通过提供等离子体处理室（10）中的聚焦环（16）和静电吸盘（14）之间的区域（30）中的聚合物的沉积， 在卡盘和聚焦环之间的间隙中的气体。 一系列通道将间隙气体传送到衬底支撑件的外表面和围绕衬底支撑件的聚焦环的内表面之间的环形间隙。 提供给环形间隙的间隙气体优选为不影响晶片加工操作的诸如氦气等气体。 在等离子体蚀刻的情况下，间隙气体以足以阻止工艺气体的迁移并由其产物挥发到环形间隙中的流量提供，而不会不利地影响边缘蚀刻性能。