公开(公告)号：WO2012166727A3

公开(公告)日：2013-05-10

申请号：PCT/US2012039855

申请日：2012-05-29

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  HYMES DIANE ,  SCHOEPP ALAN M

Inventor： SIRARD STEPHEN M ,  HYMES DIANE ,  SCHOEPP ALAN M

IPC: H01L21/302

CPC classification number: H01L21/02057 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/6831

Abstract: An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.

Abstract translation: 提供一种用于冷冻干燥基材的装置。 提供了用于接收基板的室。 用于支撑和静电夹持衬底的静电吸盘（ESC）在腔室内。 温度控制器控制静电卡盘的温度。 冷凝器连接到腔室。 真空泵与腔室流体连接。

公开(公告)号：WO2008094441A1

公开(公告)日：2008-08-07

申请号：PCT/US2008/000929

申请日：2008-01-24

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew D., III ,  SCHOEPP, Alan M. ,  SEXTON, Gregory ,  KENNEDY, William S.

Inventor： BAILEY, Andrew D., III ,  SCHOEPP, Alan M. ,  SEXTON, Gregory ,  KENNEDY, William S.

IPC: H01L21/3065 ,  H01L21/306

CPC classification number: H01L21/3065 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6838

Abstract: A bevel etcher incorporating a vacuum chuck used for cleaning the bevel edge and for reducing the bending curvature of a semiconductor substrate. The bevel etcher includes a vacuum chuck and a plasma generation unit which energizes process gas into a plasma state. The vacuum chuck includes a chuck body and a support ring. The top surface of the chuck body and inner periphery of the support ring form a vacuum region enclosed by the bottom surface of a substrate mounted on the support ring. A vacuum pump evacuates the vacuum region during operation. The vacuum chuck is operative to hold the substrate in place by the pressure difference between the top and bottom surfaces of the substrate. The pressure difference also generates a bending force to reduce the bending curvature of the substrate.

Abstract translation: 包括用于清洁斜边缘并用于减小半导体衬底的弯曲曲率的真空吸盘的斜面蚀刻机。 斜面蚀刻器包括真空吸盘和等离子体产生单元，其将处理气体激发成等离子体状态。 真空吸盘包括卡盘主体和支撑环。 卡盘体的上表面和支撑环的内周形成由安装在支撑环上的基板的底面包围的真空区域。 真空泵在运行期间抽空真空区域。 真空吸盘可操作以通过衬底的顶表面和底表面之间的压力差将衬底保持在适当的位置。 压差也产生弯曲力以减小基板的弯曲曲率。

公开(公告)号：WO2008091667A1

公开(公告)日：2008-07-31

申请号：PCT/US2008/000939

申请日：2008-01-24

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D., III ,  SCHOEPP, Alan M. ,  SEXTON, Gregory ,  KIM, Yunsang ,  KENNEDY, William S.

Inventor： BAILEY, Andrew, D., III ,  SCHOEPP, Alan M. ,  SEXTON, Gregory ,  KIM, Yunsang ,  KENNEDY, William S.

IPC: H01L21/3065

CPC classification number: H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.

Abstract translation: 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

公开(公告)号：WO2012166727A2

公开(公告)日：2012-12-06

申请号：PCT/US2012/039855

申请日：2012-05-29

Applicant: LAM RESEARCH CORPORATION ,  SIRARD, Stephen M. ,  HYMES, Diane ,  SCHOEPP, Alan M.

Inventor： SIRARD, Stephen M. ,  HYMES, Diane ,  SCHOEPP, Alan M.

IPC: H01L21/302

CPC classification number: H01L21/02057 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/6831

Abstract: An apparatus for freeze drying a substrate is provided. A chamber for receiving a substrate is provided. An electrostatic chuck (ESC) for supporting and electrostatically clamping the substrate is within the chamber. A temperature controller controls the temperature of the electrostatic chuck. A condenser is connected to the chamber. A vacuum pump is in fluid connection with the chamber.

Abstract translation: 提供一种用于冷冻干燥基材的装置。 提供了用于接收基板的室。 用于支撑和静电夹持衬底的静电吸盘（ESC）在腔室内。 温度控制器控制静电卡盘的温度。 冷凝器连接到腔室。 真空泵与腔室流体连接。

公开(公告)号：WO2008130519A1

公开(公告)日：2008-10-30

申请号：PCT/US2008/004769

申请日：2008-04-14

Applicant: LAM RESEARCH CORPORATION ,  THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

Inventor： THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

IPC: H01L21/304

CPC classification number: H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract translation: 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：WO2008091668A1

公开(公告)日：2008-07-31

申请号：PCT/US2008/000940

申请日：2008-01-24

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D., III ,  SCHOEPP, Alan M. ,  SEXTON, Gregory ,  KUTHI, Andras ,  KIM, Yunsang ,  KENNEDY, William S.

Inventor： BAILEY, Andrew, D., III ,  SCHOEPP, Alan M. ,  SEXTON, Gregory ,  KUTHI, Andras ,  KIM, Yunsang ,  KENNEDY, William S.

IPC: H01L21/3065

CPC classification number: H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

Abstract: A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

Abstract translation: 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。 下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。 该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

公开(公告)号：WO2003012821A2

公开(公告)日：2003-02-13

申请号：PCT/US2002/023092

申请日：2002-07-18

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

Inventor： WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

IPC: H01J37/00

CPC classification number: H01J37/321 ,  H01J37/32467

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

Abstract translation: 提供了一种用于在处理室内产生电场的天线装置。 通常，天线装置包括围绕天线轴设置的第一回路。 第一回路包括具有第一匝间隙的第一匝; 具有第二匝间隙的第二匝，其中所述第二匝与所述第一匝同心并共面并与所述第一匝间隔开，并且其中所述天线轴穿过所述第一匝和第二匝的中心; 电连接在所述第一匝的第二端和所述第二匝的第一端之间的第一匝秒转向连接器包括在所述第一匝和所述第二匝之间并且与所述第一匝间隔和所述第二匝间隔并且 第二回合差距。

公开(公告)号：WO0145134A2

公开(公告)日：2001-06-21

申请号：PCT/US0042174

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065 ,  H01J37/00

CPC classification number: H01J37/32467 ,  H01J37/321

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

Abstract translation: 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

公开(公告)号：WO2008130517A1

公开(公告)日：2008-10-30

申请号：PCT/US2008/004752

申请日：2008-04-11

Applicant: LAM RESEARCH CORPORATION ,  THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

Inventor： THIE, William ,  BOYD, John, M. ,  REDEKER, Fritz, C. ,  DORDI, Yezdi ,  PARKS, John ,  ARUNAGIRI, Tiruchirapalli ,  OWCZARZ, Aleksander ,  BALISKY, Todd ,  THOMAS, Clint ,  WYLIE, Jacob ,  SCHOEPP, Alan, M.

IPC: H01L21/28 ,  H01L21/3205

CPC classification number: H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual- walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract translation: 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：WO2008097662A1

公开(公告)日：2008-08-14

申请号：PCT/US2008/001761

申请日：2008-02-07

Applicant: LAM RESEARCH CORPORATION ,  SEXTON, Gregory, S. ,  BAILEY III, Andrew D. ,  SCHOEPP, Alan, M. ,  BONIFACE, John, D.

Inventor： SEXTON, Gregory, S. ,  BAILEY III, Andrew D. ,  SCHOEPP, Alan, M. ,  BONIFACE, John, D.

IPC: H01L21/68

CPC classification number: H01L21/67069 ,  H01J37/32568

Abstract: Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

Abstract translation: 位置关系建立在一个过程室中。 基底配置有下电极表面以支撑晶片，并且上电极具有下表面。 安装在基座上的驱动器具有连接到上电极的连杆。 放置在下表面上的固定器移动到下电极的期望取向。 通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。 连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。 驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。