公开(公告)号：WO2017209900A1

公开(公告)日：2017-12-07

申请号：PCT/US2017/031590

申请日：2017-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： LO, Kin Pong ,  CHU, Schubert S.

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67207 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32889 ,  H01L21/02046 ,  H01L21/3065 ,  H01L21/67184

Abstract: Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma-cleaning chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma-cleaning chamber for removing carbon-containing contaminants from the surface of the substrate.

Abstract translation: 本公开的实施方式一般涉及改进的真空处理系统。 在一个实施方式中，真空处理系统包括耦合到至少一个外延处理室的第一传输室，第二传输室，设置在第一传输室和第二传输室之间的过渡站，第一等离子体清洁室，耦合到 用于从衬底的表面去除氧化物的第二传输室，以及耦合到第二传输室的负载锁定室。 过渡站连接到第一传送室和第二传送室，并且过渡站包括第二等离子体清洁室，用于从基底表面除去含碳污染物。

公开(公告)号：WO2017106601A8

公开(公告)日：2017-07-27

申请号：PCT/US2016067100

申请日：2016-12-16

Applicant: AMASTAN TECH LLC

Inventor： HADIDI KAMAL ,  WROBEL GREGORY ,  REDJDAL MAKHLOUF

IPC: B01J35/08 ,  B05D1/02 ,  C03B19/10 ,  C23C4/134 ,  F26B3/04 ,  F26B3/12 ,  H05H1/48

CPC classification number: B22F9/30 ,  B22F1/0003 ,  B22F9/08 ,  B22F2201/10 ,  B22F2201/20 ,  B22F2202/13 ,  B22F2301/205 ,  B22F2304/10 ,  B22F2998/10 ,  C22C14/00 ,  H01J37/321 ,  H01J37/32192

Abstract: Methodologies, systems, and devices are provided for producing metal spheroidal powder products. Dehydrogenated and spheroidized particles are prepared using a process including introducing a metal hydride feed material into a plasma torch. The metal hydride feed material is melted within a plasma in order to dehydrogenate and spheroidize the materials, forming dehydrogenated and spheroidized particles. The dehydrogenated and spheroidized particles are then exposed to an inert gas and cooled in order to solidify the particles into dehydrogenated and spheroidized particles. The particles are cooled within a chamber having an inert gas.

Abstract translation: 提供用于生产金属球状粉末产品的方法，系统和设备。 使用包括将金属氢化物原料引入等离子炬中的方法制备脱氢和球化颗粒。 金属氢化物原料在等离子体内熔化以使材料脱氢和球化，形成脱氢和球化颗粒。 然后将脱氢和球化粒子暴露于惰性气体中并冷却，以便将粒子固化成脱氢和球化粒子。 颗粒在具有惰性气体的室内冷却。

公开(公告)号：WO2017005554A1

公开(公告)日：2017-01-12

申请号：PCT/EP2016/065033

申请日：2016-06-28

Applicant: TETRA LAVAL HOLDINGS & FINANCE S.A.

Inventor： FAYET, Pierre ,  LARRIEU, Jerome ,  PILEMALM, Marcus

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  B32B7/12 ,  B32B27/08 ,  B32B27/10 ,  B32B27/306 ,  B32B27/32 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B2255/10 ,  B32B2255/20 ,  B32B2307/31 ,  B32B2307/514 ,  B32B2307/7242 ,  B32B2307/7244 ,  B32B2307/7246 ,  B32B2307/7248 ,  B32B2439/62 ,  B32B2439/70 ,  C23C16/26 ,  C23C16/505 ,  C23C16/545 ,  H01J37/321 ,  H01J37/3277

Abstract: The invention concerns a device (10) for continuously treating a web substrate (15a) in a plasma enhanced process. The device (10) contains at least one treatment station (12a, 12b) with a vacuum process chamber, wherein at least one plasma treatment unit (13a, 13b) is allocated to the at least one treatment station (12a, 12b) which is designed to form a plasma zone (14a, 14b) within the process chamber for treating a surface of the web substrate (15a). The device (10) further contains a transporting system for continuously transporting the web substrate (15a, 15b) through the at least one treatment station (12a, 12b), with an unwind roller (20) and a rewind roller (21), wherein the transporting system defines a transporting path of the web substrate (15a) through the process chamber. The plasma treatment unit (13a, 13b) contains at least one extensive antenna and at least one radiofrequency generator for exciting said extensive antenna to at least one of its resonant frequencies, wherein the transporting system in the process chamber defines a treatment path section for the web substrate (15a), wherein the treatment path section for the web substrate (15a) lies opposite to and spaced from the extensive antenna.

Abstract translation: 本发明涉及一种用于在等离子体增强过程中连续处理幅材衬底（15a）的装置（10）。 装置（10）包含至少一个具有真空处理室的处理站（12a，12b），其中至少一个等离子体处理单元（13a，13b）被分配给至少一个处理站（12a，12b） 设计成在处理室内形成等离子体区域（14a，14b），用于处理幅材衬底（15a）的表面。 所述装置（10）还包括用于通过所述至少一个处理站（12a，12b）连续地传送所述幅材衬底（15a，15b）的传送系统，其具有展开辊（20）和重绕辊（21），其中 输送系统通过处理室限定幅材基材（15a）的输送路径。 等离子体处理单元（13a，13b）包含至少一个广泛天线和至少一个射频发生器，用于将所述广泛天线激励至其谐振频率中的至少一个，其中处理室中的传输系统限定用于 卷筒纸基板（15a），其中所述卷筒纸基板（15a）的处理路径部分与所述广泛天线相对并间隔开。

公开(公告)号：WO2016187166A1

公开(公告)日：2016-11-24

申请号：PCT/US2016/032799

申请日：2016-05-16

Applicant: PLASMABILITY, LLC

Inventor： HOLBER, William ,  BASNETT, Robert J.

IPC: H01J37/32

CPC classification number: C30B25/105 ,  C23C16/272 ,  C23C16/455 ,  C23C16/458 ,  C23C16/463 ,  C23C16/505 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  C30B29/04 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/3266

Abstract: A plasma processing apparatus includes a toroidal-shape plasma vessel comprising a process chamber. A magnetic core surrounds a portion of the toroidal-shape plasma vessel. An RF power supply having an output that is electrically connected to the magnetic core energizes the magnetic core, thereby forming a toroidal plasma loop discharge in the plasma chamber. A workpiece holder is positioned in the toroidal-shape plasma vessel and includes at least one face. A plasma guiding structure is shaped and dimensioned so as to constrain a section of plasma in the toroidal plasma loop to travel substantially perpendicular to a normal to the at least one face.

Abstract translation: 一种等离子体处理装置包括具有处理室的环形等离子体容器。 磁芯围绕环形等离子体容器的一部分。 具有与磁芯电连接的输出的RF电源为磁芯供能，从而在等离子体室中形成环形等离子体环放电。 工件保持器位于环形等离子体容器中并且包括至少一个面。 等离子体引导结构的形状和尺寸被设计成限制环形等离子体回路中的等离子体的一部分基本上垂直于至少一个面的法线行进。

公开(公告)号：WO2016181396A1

公开(公告)日：2016-11-17

申请号：PCT/IL2016/050501

申请日：2016-05-11

Applicant: NOVA PLASMA LTD.

Inventor： LAM, Amnon ,  HARHOL, Aviad ,  FUCHS, Eliezer ,  PORAT, Chen

IPC: A61L15/16

CPC classification number: H01J37/32798 ,  A61L27/18 ,  A61L27/50 ,  A61L27/54 ,  A61L2300/406 ,  A61L2400/18 ,  A61L2430/04 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32348 ,  H01J37/32403 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32825 ,  C08L83/04

Abstract: An apparatus for plasma treatment of an implant prior to installing the implant in a live subject is provided. The apparatus comprises an activation device and a portable container detachable from the activation device. The portable container comprises a closed compartment containing the implant immersed in a fluid, and the activation device comprises a slot configured to receive the portable container. The activation device further comprises an electrical circuit configured to be electrically associated with at least one electrode and configured to provide to the at least one electrode electric power suitable for applying a plasma generating electric field in the closed compartment, when the portable container is disposed in the slot. A container suitable for providing plasma treatment to a silicone implant and a method for preparing an implant for implantation surgery are also provided.

Abstract translation: 提供了一种用于在将植入物安装在活体受试者之前等离子体处理植入物的装置。 该装置包括一个启动装置和一个从该启动装置可拆卸的便携式容器。 便携式容器包括封闭的隔间，其包含沉浸在流体中的植入物，并且所述致动装置包括构造成接纳便携式容器的槽。 激活装置还包括电路，其被配置为与至少一个电极电连接并且被配置为当便携式容器设置在该电路中时被配置为向所述至少一个电极提供适合于在封闭隔间中施加等离子体产生电场的电力 插槽。 还提供了适合于提供等离子体处理到硅树脂植入物的容器和用于制备用于植入手术的植入物的方法。

公开(公告)号：WO2016170989A1

公开(公告)日：2016-10-27

申请号：PCT/JP2016/061338

申请日：2016-04-07

Applicant: 東京エレクトロン株式会社

Inventor： 松本　和也 ,  山本　高志

IPC: H01L21/683 ,  H01L21/3065 ,  H05H1/46

CPC classification number: H01J37/32715 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/3244 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32816 ,  H01J37/32834 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/683 ,  H01L21/6833 ,  H01L43/12 ,  H01R39/28 ,  H01R39/381

Abstract: 一実施形態のスリップリングは、回転軸線周りで回転可能な導電性の回転子と、回転子と同軸に設けられた導電性の固定子と、回転子と固定子との間に配置される導電性の球体であり、回転子と固定子との間の電気的パスを形成する、該球体と、回転子及び固定子のうち一方と球体との間において設けられ、回転軸線に対して周方向に延在する導電性のコイルバネであり、回転子及び固定子のうち一方と球体とに接触する、該コイルバネと、を備える。

Abstract translation: 根据实施例的滑环设置有：能够围绕旋转轴线旋转的导电转子; 与转子同轴设置的导电定子; 设置在转子和定子之间并在转子和定子之间形成电路的导电球; 以及导电螺旋弹簧，其设置在球体与转子或定子之间，并且相对于旋转轴线在圆周方向上延伸并与球体和转子或定子接触。

公开(公告)号：WO2016167852A1

公开(公告)日：2016-10-20

申请号：PCT/US2016/013390

申请日：2016-01-14

Applicant: APPLIED MATERIALS, INC.

Inventor： MISHRA, Rohit ,  SCOTT, Graeme Jamieson ,  SIRAJUDDIN, Khalid Mohiuddin ,  TULSHIBAGWALE, Sheshraj L. ,  THIRUNAVUKARASU, Sriskanthatajah

IPC: H01L21/687

CPC classification number: H01J37/32642 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32477 ,  H01J37/32715

Abstract: Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an edge or bevel of the substrate. Contamination of the substrate bevel, backside and substrate periphery region may be reduced after a plasma process. In one embodiment, an edge ring includes a base circular ring having an inner surface defining a center opening formed thereon and an outer surface defining a perimeter of the base circular ring. The base circular ring includes an upper body and a lower portion connected to the upper body. A step is formed at the inner surface of the base circular ring and above a first upper surface of the upper body. The step defines a pocket above the first upper surface of the upper body. A plurality of raised features formed on the first upper surface of the base circular ring.

Abstract translation: 本公开的实施例包括用于从衬底周边区域（例如衬底的边缘或斜面）减少残余膜层的方法和装置。 在等离子体处理之后，衬底斜面，背面和衬底周边区域的污染可能会降低。 在一个实施例中，边缘环包括基部圆环，其具有限定其上形成的中心开口的内表面和限定基部圆环的周边的外表面。 基座圆环包括上身和连接到上身的下部。 在基部圆环的内表面和上身的第一上表面上方形成台阶。 该步骤限定在上身的第一上表面上方的口袋。 形成在基部圆环的第一上表面上的多个凸起特征。

公开(公告)号：WO2016094047A1

公开(公告)日：2016-06-16

申请号：PCT/US2015/061372

申请日：2015-11-18

Applicant: APPLIED MATERIALS, INC

Inventor： LUBOMIRSKY, Dmitry

IPC: H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32458

Abstract: A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity toward the process chamber. A method of plasma processing includes generating a plasma within a substantially toroidal plasma cavity that defines a toroidal axis, to form plasma products, and distributing the plasma products to a process chamber through a plurality of outlet openings substantially azimuthally distributed about a first axial side of the plasma cavity, directly into a process chamber.

Abstract translation: 等离子体处理系统包括在等离子体腔中产生等离子体的处理室和等离子体源。 等离子体腔体基本上是围绕环形轴线对称的。 等离子体源在等离子体空腔的等离子体产品的第一轴向侧上限定多个出口孔，其通过等离子体通过从等离子体空腔朝向处理室的轴向方向产生。 等离子体处理的方法包括在基本上环形的等离子体腔内产生等离子体，所述等离子体腔限定环形轴线，以形成等离子体产物，并且通过多个出口开口将等离子体产物分布到处理室，所述多个出口开口基本上以方位角分布在第一轴向侧 等离子体腔，直接进入处理室。

公开(公告)号：WO2015119737A1

公开(公告)日：2015-08-13

申请号：PCT/US2015/010652

申请日：2015-01-08

Applicant: APPLIED MATERIALS, INC.

Inventor： NGUYEN, Andrew ,  SARODE VISHWANATH, Yogananda ,  CHO, Tom K.

IPC: H01L21/02

CPC classification number: H01J37/32834 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32623

Abstract: The present disclosure generally relates to apparatus and methods for symmetry in electrical field, gas flow and thermal distribution in a processing chamber to achieve process uniformity. Embodiment of the present disclosure includes a plasma processing chamber having a plasma source, a substrate support assembly and a vacuum pump aligned along the same central axis to create substantially symmetrical flow paths, electrical field, and thermal distribution in the plasma processing chamber resulting in improved process uniformity and reduced skew.

Abstract translation: 本发明一般涉及在处理室中的电场对称性，气流和热分布的装置和方法，以实现工艺的均匀性。 本公开的实施例包括具有等离子体源，基板支撑组件和沿着相同中心轴对准的真空泵的等离子体处理室，以在等离子体处理室中产生基本上对称的流动路径，电场和热分布，从而改善 工艺均匀性和倾斜度降低。

公开(公告)号：WO2015106318A1

公开(公告)日：2015-07-23

申请号：PCT/AU2015/050013

申请日：2015-01-15

Applicant: GALLIUM ENTERPRISES PTY LTD

Inventor： MANN, Ian ,  BARIK, Satyanarayan ,  WINTREBERT-FOUQUET, Marie ,  BROWN, Josh ,  DUNNIGAN, Paul

IPC: H05H1/46 ,  C23C16/34 ,  C23C16/00

CPC classification number: C23C16/50 ,  C23C16/34 ,  C23C16/509 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32486 ,  H01J2237/3321

Abstract: A plasma generator is described which employs a partial PBN liner not only to minimise the loss of energetic gas species during film formation but also to reduce boron impurity levels introduced into the growing film relative to the use of a complete PBN liner. The use of such a plasma generator in a film forming apparatus and method of forming a film is also described.

Abstract translation: 描述了一种使用部分PBN衬垫的等离子体发生器，其不仅使成膜期间能量气体种类的损失最小化，而且还减少了相对于使用完整的PBN衬垫引入生长膜的硼杂质水平。 还描述了在成膜装置中使用这种等离子体发生器和形成膜的方法。