公开(公告)号：WO1997036693A1

公开(公告)日：1997-10-09

申请号：PCT/US1997006168

申请日：1997-03-28

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  MUSKET, Ronald, G. ,  BALOOCH, Medhi ,  SIEKHAUS, Wigbert, J.

IPC: B05D05/12

CPC classification number: C23C14/5806 ,  C23C14/48 ,  H01J9/022 ,  H01J2201/30426

Abstract: The work function of electron emitters can be modified by forming a modifying layer at the surface using low energy ion implantation, in a controlled environment, placing chosen elements below the surface of electron emitters as Cs implanted in Si(100) at four different doses illustrates. Sometimes implanted species are deep enough that they do not react with the atmosphere during subsequent low-temperature processing. Then, species implanted in the emitting surfaces are segregated using elevated temperature treatment of the emitters in vacuum and/or reactive gases. The implanted ions modify the work function at the surface, via thin layers of the implanted species on top of the emitter surfaces, or compounds or alloy layers at the surface of the emitters. Depending on the implanted species, the initial emitter material, and the environment, these layers can either increase or decease the work function of the emitter.

Abstract translation: 电子发射体的功函数可以通过在受控环境中使用低能离子注入在表面上形成修饰层进行修饰，将选定的元素放置在电子发射体的表面以下，以四种不同剂量注入Si（100） 。 有时植入的物种足够深，以至于在随后的低温处理过程中它们不会与大气反应。 然后，通过在真空和/或反应气体中对发射体进行高温处理，将注入发射表面的物质分离。 注入的离子通过在发射体表面顶部的注入物质的薄层，或在发射体的表面处的化合物或合金层来修饰表面的功函数。 根据植入物种，初始发射体材料和环境，这些层可以增加或降低发射体的功函数。

公开(公告)号：WO1997033701A1

公开(公告)日：1997-09-18

申请号：PCT/US1997004006

申请日：1997-03-14

Applicant: THE TEXWIPE COMPANY, L.L.C.

Inventor： THE TEXWIPE COMPANY, L.L.C. ,  BHATTACHARJEE, Himansu ,  PALEY, Edward

IPC: B05D05/12

CPC classification number: B05D5/12 ,  B08B1/00 ,  B08B17/00 ,  C09K3/16 ,  D06M15/3562 ,  D06M23/08 ,  H05F1/02 ,  Y10S2/901 ,  Y10T428/2481 ,  Y10T428/24893 ,  Y10T428/29 ,  Y10T442/2418 ,  Y10T442/2434 ,  Y10T442/2459

Abstract: Anti-static cleanroom products having a coating of conductive polymeric particulates which decreases the surface resistivity of the products. Preferably, the particulates are pyrrole polymers. The anti-static properties are achieved by depositing conductive polymer particles onto the non-conductive substrate surface. The anti-static products include cleanroom wipers, stationery products (notebooks and writing instruments), garments and swabs (polyurethane foam tipped). The cleanroom stationery products include notebooks comprising polyethylene impregnated with silica. The invention also includes anti-static plastic gloves.

Abstract translation: 具有降低产品表面电阻率的导电聚合物微粒涂层的防静电洁净室产品。 优选地，颗粒是吡咯聚合物。 通过将导电聚合物颗粒沉积到非导电基底表面上来实现抗静电性能。 防静电产品包括洁净室擦拭器，文具产品（笔记本和书写工具），服装和棉签（聚氨酯泡沫塑料）。 洁净室文具产品包括包含浸渍有二氧化硅的聚乙烯的笔记本。 本发明还包括防静电塑料手套。

公开(公告)号：WO1996032201A1

公开(公告)日：1996-10-17

申请号：PCT/US1996004934

申请日：1996-04-10

Applicant: LOCKHEED MARTIN ENERGY SYSTEMS, INC.

Inventor： LOCKHEED MARTIN ENERGY SYSTEMS, INC. ,  GOYAL, Amit ,  BUDAI, John, D. ,  KROEGER, Donald, M. ,  NORTON, David, P. ,  SPECHT, Eliot, D. ,  CHRISTEN, David, K.

IPC: B05D05/12

CPC classification number: H01L39/248 ,  C21D8/12 ,  C21D2201/04 ,  C21D2201/05 ,  C23C14/028 ,  C30B23/02 ,  C30B25/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2448 ,  H01L39/2454 ,  H01L39/2461 ,  Y10S428/93 ,  Y10S505/701 ,  Y10T29/49014 ,  Y10T428/12493 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/31678

Abstract: A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

Abstract translation: 双轴纹理制品包括具有面心立方体心立方或六方密堆积结晶结构的金属的经轧制和退火的双轴织构化衬底; 以及外延沉积在其上的外延超导体或其它器件。

公开(公告)号：WO1996017693A1

公开(公告)日：1996-06-13

申请号：PCT/US1995015605

申请日：1995-12-08

Applicant: SENOVA CORPORATION

Inventor： SENOVA CORPORATION ,  BAO, Quingcheng ,  SORENSEN, Ian ,  GLAUNSINGER, William

IPC: B05D05/12

CPC classification number: G01M3/045 ,  C23C8/10 ,  C23C26/00 ,  G01N27/12 ,  G01N33/0052

Abstract: A thin film device having a selectively passivated surface (16) is provided. An embodiment of the device is particularly suited to detection of chemical constituents by selective adsorption, where the selectively passivated surface (16) is inert to the chemical constituent being detected. A method of fabrication of the device is also provided in which the selective passivation is achieved by selectively applying the metallic adhesive (14) to the substrate (12). The migration of the metallic adhesive (14) through the thin film layer (16) is essentially normal to the surface of the substrate (12), thereby limiting the passivation of the thin film layer (16) to the surface areas directly overlying the metallic adhesive (14).

Abstract translation: 提供了具有选择性钝化表面（16）的薄膜装置。 该装置的一个实施方案特别适用于通过选择性吸附来检测化学成分，其中选择性钝化的表面（16）对被检测的化学成分是惰性的。 还提供了一种制造该器件的方法，其中通过选择性地将金属粘合剂（14）施加到基底（12）来实现选择性钝化。 金属粘合剂（14）穿过薄膜层（16）的迁移基本上垂直于基底（12）的表面，由此限制薄膜层（16）的钝化直接覆盖金属 粘合剂（14）。

公开(公告)号：WO1992019391A1

公开(公告)日：1992-11-12

申请号：PCT/US1992003505

申请日：1992-04-28

Applicant: GONG, Benmin ,  CHIEN, James, C., W.

IPC: B05D05/12

CPC classification number: C04B41/87 ,  C03C17/25 ,  C03C2217/229 ,  C03C2217/231 ,  C03C2217/24 ,  C03C2218/32 ,  C04B41/4554 ,  C04B41/5027 ,  C04B41/5072 ,  C04B41/81 ,  C04B41/85 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1279 ,  H01L21/316

Abstract: A method is disclosed of forming thin uniform micron range and submicron range aberration-resistant and hole-free high-temperature thermally stable metal oxide coatings upon metal, insulating and other substrates, involving the application of a polymer metal complex precursor solution to the substrate and appropriate firing for oxidation of the metal and the coating while burning off all traces of the polymer. Insulating metal oxide coatings on conducting and semiconducting substrates are produced, and, if desired, conducting metal oxide coatings on insulating or semiconducting substrates.

Abstract translation: 公开了一种在金属，绝缘和其它基底上形成薄的均匀微米范围和亚微米范围的抗像差和无孔高温热稳定金属氧化物涂层的方法，涉及将聚合物金属络合物前体溶液施加到基底上， 适当地烧制金属和涂层的氧化，同时燃烧聚合物的所有痕迹。 制造导电和半导体衬底上的绝缘金属氧化物涂层，如果需要，在绝缘或半导体衬底上导电金属氧化物涂层。

公开(公告)号：WO1988008337A1

公开(公告)日：1988-11-03

申请号：PCT/US1988000077

申请日：1988-01-15

Applicant: MACDERMID, INCORPORATED

Inventor： MACDERMID, INCORPORATED ,  FERRIER, Donald, R.

IPC: B05D05/12

CPC classification number: B05D5/12 ,  G03F7/00 ,  H05K3/184 ,  H05K3/426 ,  H05K2203/0565 ,  H05K2203/0769 ,  H05K2203/0786

Abstract: An additive process for making printed circuit boards utilizing aqueous alkaline strippable resists, in which a suitable insulating substrate is patterned with the resist, the resist-patterned substrate catalyzed to electroless metal deposition, the resist then stripped completely from the substrate, utilizing an aqueous alkaline solution, preferably containing a reducing agent, and the electroless metal then deposited over the areas of the substrate catalyzed in the desired pattern.

Abstract translation: 一种利用水性碱性可剥离抗蚀剂制造印刷电路板的添加方法，其中合适的绝缘衬底用抗蚀剂图案化，抗蚀剂图案化衬底被催化以进行无电金属沉积，然后使用碱性水溶液将抗蚀剂从衬底完全剥离 溶液，优选含有还原剂，然后将无电金属沉积在以所需图案催化的底物区域上。

公开(公告)号：WO1983003210A1

公开(公告)日：1983-09-29

申请号：PCT/US1983000226

申请日：1983-02-22

Applicant: WESTERN ELECTRIC COMPANY, INC.

Inventor： WESTERN ELECTRIC COMPANY, INC. ,  SCHONHORN, Harold ,  SHARPE, Louis, Haughton

IPC: B05D05/12

CPC classification number: H05K1/095 ,  C08K5/0008 ,  C08K5/095 ,  C08K5/17 ,  C09D7/63 ,  C09K3/32 ,  H01L23/4828 ,  H01L2924/0002 ,  Y10T428/2857 ,  Y10T428/287 ,  Y10T428/2887 ,  Y10T428/31511 ,  Y10T428/31663 ,  Y10T428/31681 ,  Y10T428/31699 ,  Y10T428/31786 ,  Y10T428/31935 ,  H01L2924/00

Abstract: The spreading of liquids, e.g., an epoxy resin, on a surface can be prevented or reduced if an inhibitor is added to the liquid. Inhibitors according to the invention have the generic formula [CX3-(CY2)n]N-R, where X is H or F, Y is H, F, or Cl, n is a number from about 1 to about 12, R is a carboxylic acid, an amide, a substituted amide, an amine, an alcohol, or an ester functionality, and N is 1, 2, or 3 if R is an alcohol or amine functionality, and 1 otherwise. The inhibitor typically has substantial solubility in at least one of the constituents of the liquid, and the liquid typically contains between about 0.05% and about 5% by weight of the inhibitor. Preferred inhibitors are perfluorooctanoic acid and 1H, 1H-pentadecafluorooctyl amine.

公开(公告)号：WO1998023389A1

公开(公告)日：1998-06-04

申请号：PCT/US1997021449

申请日：1997-11-24

Applicant: GENUS, INC.

Inventor： GENUS, INC. ,  GADGIL, Prasad, N. ,  GALEWSKY, Carl, J.

IPC: B05D05/12

CPC classification number: C23C16/54 ,  C23C16/34

Abstract: Processes for forming nitride films in integrated circuit manufacture are accomplished by chemical vapor deposition using nitrogen fluoride (NF3) as a nitrogen-bearing gas providing nitrogen to the nitride film. The method includes the steps of placing a substrate in a CVD reactor chamber (11), heating the substrate (25), and flowing the precursors including nitrogen fluoride over the surface of the heated substrate to form the nitride films. Process examples are provided wherein the nitrided films are tungsten nitride, tungsten silicon nitride, and titanium silicon nitride. Process variations include film formation with and without plasma enhancement, and provision of silicon to films be either silane or disilane.

Abstract translation: 在集成电路制造中形成氮化物膜的工艺通过使用氮氟化物（NF 3）作为向氮化物膜提供氮气的含氮气体的化学气相沉积来实现。 该方法包括以下步骤：将衬底放置在CVD反应器室（11）中，加热衬底（25），并使包含氮氟化物的前体在加热衬底的表面上流动以形成氮化物膜。 提供了其中氮化膜是氮化钨，氮化硅钨和氮化硅钛的工艺实例。 工艺变化包括具有和不具有等离子体增强的成膜，以及将硅提供为硅烷或乙硅烷。

公开(公告)号：WO1996011751A1

公开(公告)日：1996-04-25

申请号：PCT/US1995013162

申请日：1995-10-16

Applicant: RD CHEMICAL COMPANY

Inventor： RD CHEMICAL COMPANY ,  SEDLAK, Rudolf, P.

IPC: B05D05/12

CPC classification number: C23C18/42 ,  H05K3/244

Abstract: The invention features a composition for immersion plating comprising an aqueous solution of a noble metal salt and a complexing agent for ions of the noble metal, said solution having a pH of from about 0 to 5.5. The noble metal is preferably palladium in the form of palladium nitrate. The complexing agent is preferably oxalic acid. The composition is used in a method of immersion plating which comprises contacting a substrate which is preferably a copper or copper alloy component of a printed circuit board with the composition for a period of time sufficient to coat palladium onto the copper surface in a uniform manner. The methodology provides for a high degree of uniformity, good adhesion between the palladium and the copper as well as a relatively thin coating. Further, the palladium coating is carried out in a relatively short period of time and provides a longlived solderable finish.

Abstract translation: 本发明的特征在于用于浸镀的组合物，其包含贵金属盐的水溶液和用于贵金属离子的络合剂，所述溶液的pH为约0至5.5。 贵金属优选为硝酸钯形式的钯。 络合剂优选为草酸。 该组合物用于浸镀方法中，该方法包括将印刷电路板的铜或铜合金组分的基底与该组合物接触足够长的时间以将铜以均匀的方式涂覆在铜表面上。 该方法提供了高度均匀性，钯和铜之间的良好粘合性以及较薄的涂层。 此外，钯涂层在相当短的时间内进行，并且提供了长期的可焊接光洁度。

公开(公告)号：WO1995021030A1

公开(公告)日：1995-08-10

申请号：PCT/US1994001186

申请日：1994-02-07

Applicant: THE GOVERNMENT OF THE UNITED STATES OF AMERICA, represented by THE SECRETARY OF THE NAVY

Inventor： THE GOVERNMENT OF THE UNITED STATES OF AMERICA, represented by THE SECRETARY OF THE NAVY ,  CALVERT, Jeffrey, M. ,  DULCEY, Charles, S. ,  KOLOSKI, Timothy, S. ,  DRESSICK, Walter, J. ,  PEEK, Brian, M.

IPC: B05D05/12

CPC classification number: B82Y30/00 ,  B05D1/185 ,  B82Y40/00 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/1803 ,  C23C18/182 ,  C23C18/1844 ,  C23C18/1868 ,  C23C18/1893 ,  C23C18/2006 ,  C23C18/204 ,  C23C18/2086 ,  C23C18/30 ,  C23C18/31 ,  H05K3/182 ,  H05K3/185

Abstract: A process for efficient modification and metallization of substrates includes the steps of providing a substrate with highly photoefficient chemical functional groups on at least a portion of this substrate, exposing the substrate to actinic radiation to transform, deactivate, or remove these chemical functional groups, to modify their chemical reactivity, and carrying out further chemical reaction steps on these modified chemical functional groups.

Abstract translation: 用于衬底的有效改性和金属化的方法包括以下步骤：在该衬底的至少一部分上提供具有高光化学官能团的衬底，将衬底暴露于光化辐射以转化，去活化或除去这些化学官能团， 改变其化学反应性，并对这些改性的化学官能团进行进一步的化学反应步骤。